MTB25P04J3

CYStech Electronics Corp.
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB25P04J3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-18A
RDS(ON)@VGS=-4.5V, ID=-10A
-40V
-38A
13.5mΩ(typ)
19mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTB25P04J3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTB25P04J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB25P04J3
CYStek Product Specification
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C (Package limited)
Continuous Drain Current @VGS=-10V, TC=25°C (Silicon limited)
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
Continuous Drain Current @VGS=-10V, TA=100°C
Pulsed Drain Current
TC=25℃
TC=100℃
Power Dissipation
TA=25℃
TA=100℃
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
PD
EAS
IAS
Tj, Tstg
Limits
Unit
-40
±20
-38
-46
-29
-9.2
-5.8
-100 *1
62.5 *4
25 *4
2.5
1.0
62 *2
-18
-55~+150
V
A
W
mJ
A
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2
50 *3
Unit
°C/W
°C/W
Note : *1. Pulse width limited by safe operating area.
*2 . Tj=25°C, VDD=-15V, L=1mH, RG=25Ω.
*3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with
TA=25°C. The value in any given application depends on the user’s specific board design.
*4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It
is used to determined the current rating, when this rating falls below the package limit.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
IDSS
*RDS(ON)
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
MTB25P04J3
Min.
Typ.
Max.
Unit
-40
-1.0
-
-1.3
29
13.5
19
-2.5
±100
-1
-25
18
25
V
V
S
nA
-
30
9.3
9.6
-
μA
mΩ
nC
Test Conditions
VGS=0, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-5V, ID=-18A
VGS=±20
VDS =-32V, VGS =0
VDS =-32V, VGS =0, Tj=70°C
VGS =-10V, ID=-18A
VGS =-4.5V, ID=-10A
VDS=-20V, ID=-18A, VGS=-10V
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*trr
*Qrr
-
18
10
84
23
2894
207
162
-
-0.9
32
28
-1.2
-46
-
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 3/9
ns
VDS=-20V, VGS=-10V, RG=6Ω, ID=-18A
pF
VGS=0V, VDS=-20V, f=1MHz
V
A
ns
nC
IS=-18A, VGS=0V
IS=-18A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB25P04J3
CYStek Product Specification
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V,9V, 8V, 7V, 6V, 5V
80
-ID, Drain Current(A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
100
4V
60
3V
40
20
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=2V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-60
5
Static Drain-Source On-State resistance vs Drain Current
180
1.2
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=-2V
100
-2.5V
-3V
-4.5V
-10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
5
10
15
-IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2
180
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
-20
ID=-18A
160
140
120
100
80
60
40
VGS=-10V, ID=-18A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 13.5mΩ
20
0
0
0
MTB25P04J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
140
10
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=-15V
8
VDS=-10V
6
VDS=-20V
4
2
ID=-18A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
8
16
24
32
Qg, Total Gate Charge(nC)
40
Maximum Drain Current vs CaseTemperature
Maximum Safe Operating Area
60
10μs
RDS(ON)
Limited
100μs
1ms
10
10ms
100ms
DC
1
TC=25°C, Tj=150°, VGS=-10V
RθJC=2°C/W, Single Pulse
0.1
-I D, Maximum Drain Current(A)
1000
-ID, Drain Current(A)
60
Gate Charge Characteristics
100
100
20
Tj, Junction Temperature(°C)
Silicon limit
50
40
30
Limited by package
20
10
VGS=-10V, RθJC=2°C/W
0
0.01
0.01
MTB25P04J3
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
100
TJ(MAX) =150°C
TC=25°C
θJC=2°C/W
VDS=-5V
90
80
1000
-ID, Drain Current(A)
Peak Transient Power (W)
10000
100
70
60
50
40
30
20
10
10
1E-05 0.000 0.001 0.01
0.1
1
Pulse Width(s)
1
10
100
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM *RθJC(t)
4.RθJC=2°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB25P04J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB25P04J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB25P04J3
CYStek Product Specification
Spec. No. : C878J3
Issued Date : 2012.10.02
Revised Date : 2014.03.20
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
B25
P04
Device
Name
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB25P04J3
CYStek Product Specification