UNISONIC TECHNOLOGIES CO., LTD UTT3N06 Preliminary 3A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSFET 3 DESCRIPTION 2 The UTC UTT3N06 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switch speed and low gate charge. 1 SOT-23 (EIAJ SC-59) FEATURES * RDS(ON) < 80 mΩ @ VGS=10V, ID=3A RDS(ON) < 100 mΩ @ VGS=4.5V, ID=2.4A * High switch speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UTT3N06G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 G D S Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-048.a UTT3N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 60 V VGSS ±20 V Continuous ID 3 A Drain Current Pulsed (Note 1) IDM 12 A Power Dissipation PD 1.25 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 2) SYMBOL θJA RATINGS 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS (Note 3) Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 60 VDS=VGS, ID=250µA VGS=10V, ID=3A VGS=4.5V, ID=2.4A 1 DYNAMIC PARAMETERS (Note 4) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 4) Total Gate Charge QG VGS=10V, VDS=30V, ID=1A Gate to Source Charge QGS RG=100kΩ Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=1A, RGEN=25Ω, VGS=10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS (Note 2) Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V (Note 3) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface Mounted on FR4 Board, t <10 sec 3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 4. Guaranteed by design, not subject to production testing UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT 1 +100 -100 V µA nA nA 3 80 100 V mΩ mΩ 500 65 55 pF pF pF 62 5 5 35 65 296 80 nC nC nC ns ns ns ns 1 A 1.2 V 2 of 4 www.unisonic.com.tw QW-R209-048.a UTT3N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R209-048.a UTT3N06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QW-R209-048.a