Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F × 2 elements ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 20 V VEBO 25 V IC 300 mA Peak collector current ICP 500 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C ■ Electrical Characteristics Parameter *1 0.2±0.1 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) (Ta=25˚C) Collector to base voltage Storage temperature +0.05 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 Marking Symbol: EN Internal Connection 1 Tr1 5 2 3 6 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max 20 Unit Collector to emitter voltage VCEO IC = 1mA, IB = 0 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 25V, IC = 0 0.1 µA Forward current transfer ratio hFE VCE = 2V, IC = 4mA Base to emitter voltage VBE VCE = 2V, IC = 4mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 6V, IE = –4mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*1 500 2500 0.6 0.1 80 V MHz 7 1 Ron measuring circuit V pF Ω 1kΩ IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Composite Transistors XP4506 PT — Ta IC — VCE 250 IC — VBE 120 24 VCE=2V 100 50 0 IB=10µA 16 8µA 12 6µA 8 4µA 4 2µA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 Ta=75˚C 25˚C –25˚C 10 100 Collector current IC (mA) Collector output capacitance Cob (pF) f=1MHz Ta=25˚C 16 12 8 4 0 10 10 0 12 0.2 100 Collector to base voltage VCB (V) 0.4 0.6 1600 Ta=75˚C 25˚C –25˚C 800 400 1 1.0 fT — I E 1200 0 0.1 0.8 Base to emitter voltage VBE (V) 200 10 Collector current IC (mA) Cob — VCB 1 8 VCB=6V Ta=25˚C VCE=2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 0.1 20 6 hFE — IC 1 1 4 2000 IC/IB=10 0.001 0.1 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.01 –25˚C 60 0 0 Transition frequency fT (MHz) 20 Ta=75˚C 80 20 0 0 2 Collector current IC (mA) 150 25˚C 100 20 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 160 120 80 40 0 –0.1 –1 –10 Emitter current IE (mA) –100