APTM50DHM65T3G VDSS = 500V RDSon = 65m typ @ Tj = 25°C ID = 51A @ Tc = 25°C Asymmetrical - Bridge MOSFET Power Module 13 14 Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Q1 CR3 18 22 7 23 8 Features Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 19 Q4 CR2 4 3 29 31 30 32 16 15 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23… Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 500 51 38 270 ±30 78 390 42 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DHM65T3G – Rev 1 October, 2012 Symbol VDSS APTM50DHM65T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 500V VGS = 0V Tj = 125°C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 65 4 Max 250 1000 78 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 42A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 10800 1164 148 pF 340 nC 75 155 60 Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 42A RG = 2.2 70 ns 155 50 Diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Tj = 25°C Tj = 125°C Tc = 80°C IF = 60A IF = 120A IF = 60A trr Min 600 IF = 60A VR = 400V di/dt = 200A/µs www.microsemi.com Typ Max 250 500 60 1.7 2 Tj = 125°C 1.4 Tj = 25°C 70 Tj = 125°C 140 Tj = 25°C 100 Tj = 125°C 690 Unit V µA A 2.3 V ns nC 2–6 APTM50DHM65T3G – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM50DHM65T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min,50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ MOSFET Diode To Heatsink M4 4000 -40 -40 -40 2 Max 0.32 0.85 Unit °C/W V 150 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50DHM65T3G – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTM50DHM65T3G Typical MOSFET Performance Curve Low Voltage Output Characteristics 250 160 Low Voltage Output Characteristics VGS=7,8 &10V 140 ID, Drain Current (A) ID, Drain Current (A) VGS=10V TJ=25°C 200 150 100 TJ=125°C 50 6.5V 120 100 6V 80 5.5V 60 40 20 0 TJ=125°C 0 0 5 10 15 20 0 5 VGS=10V ID=42A 20 25 30 1.5 1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 TJ=125°C 75 50 25 TJ=25°C 0.5 25 50 75 100 125 0 150 0 1 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source 3 4 5 6 C, Capacitance (pF) VDS=250V 8 VDS=400V 6 7 Capacitance vs Drain to Source Voltage 100000 VDS=100V ID=42A TJ=25°C 10 2 VGS, Gate to Source Voltage (V) 12 VGS, Gate to Source Voltage 15 Transfert Characteristics 125 ID, Drain Current (A) RDSon, Drain to Source ON resistance Normalized RDSon vs. Temperature 2.5 2 10 VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) 4 2 Ciss 10000 1000 Coss Crss 100 10 0 0 60 120 180 240 300 0 360 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 125 100 TJ=125°C 75 50 TJ=25°C 25 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–6 APTM50DHM65T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.35 APTM50DHM65T3G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 160 TJ=125°C 120 80 TJ=25°C 40 0 0.0 0.5 1.0 1.5 2.0 2.5 150 125 30 A 100 60 A 75 50 3.0 0 200 400 600 800 -diF/dt (A/µs) QRR vs. Current Rate Charge TJ=125°C VR=400V 1.5 120 A 60 A 30 A 1.0 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 2.0 1000 1200 IRRM vs. Current Rate of Charge 40 TJ=125°C VR=400V 35 30 120 A 25 60 A 20 15 10 5 30 A 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage DC Forward Current vs. Case Temp. 500 100 400 80 300 60 IF (A) C, Capacitance (pF) TJ=125°C VR=400V 120 A 200 40 100 20 0 Duty Cycle = 0.5 TJ=175°C 0 1 10 100 1000 25 VR, Reverse Voltage (V) 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 5–6 APTM50DHM65T3G – Rev 1 October, 2012 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 200 APTM50DHM65T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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