APTM50UM13SAG-Rev3.pdf

APTM50UM13SAG
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
S
VDSS = 500V
RDSon = 13mΩ typ @ Tj = 25°C
ID = 335A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Q1
G
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
335
250
1340
±30
15
3290
71
50
3000
Unit
V
A
V
mΩ
W
A
November, 2013
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM50UM13SAG Rev 3
Symbol
VDSS
APTM50UM13SAG
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 500V
VGS = 10V, ID = 167.5A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Min
Typ
13
3
Max
400
15
5
±300
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
42.2
8.24
0.42
Max
Unit
nF
800
VGS = 10V
VBus = 250V
ID =335A
200
nC
420
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 335A
RG = 0.8Ω
42
ns
96
100
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 335A, RG = 0.8Ω
4
mJ
4.16
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 335A, RG =0.8Ω
6.32
mJ
4.64
0.038
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 360A
VR = 400V
di/dt = 1200A/µs
Junction to Case Thermal Resistance
Min
600
Typ
150
Tj = 125°C
Tj = 25°C
360
1.7
2
1.4
70
Tj = 125°C
Tj = 25°C
Tj = 125°C
140
0.6
4.2
Tc = 80°C
2.5
V
ns
µC
0.16
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November, 2013
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
IF = 360A
Diode Forward Voltage
IF = 720A
IF = 360A
°C/W
2–7
APTM50UM13SAG Rev 3
Symbol
VRRM
IRM
IF
APTM50UM13SAG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR = 600V
DC Forward Current
IF = 360A
Diode Forward Voltage
IF = 720A
IF = 360A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 360A
VR = 400V
di/dt = 1200A/µs
Min
600
Typ
Max
150
Tc = 80°C
Tj = 125°C
Tj = 25°C
360
1.7
2
1.4
70
Tj = 125°C
Tj = 25°C
Tj = 125°C
140
0.6
4.2
Junction to Case Thermal Resistance
Unit
V
µA
A
2.5
V
ns
µC
0.16
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–7
APTM50UM13SAG Rev 3
November, 2013
SP6 Package outline (dimensions in mm)
APTM50UM13SAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
600
800
7.5V
7V
ID, Drain Current (A)
600
6.5V
400
6V
200
5.5V
5V
0
0
5
10
15
20
400
300
200
TJ=125°C
TJ=25°C
100
0
0
25
VDS , Drain to Source Voltage (V)
1
2
3
4
5
6
7
8
VGS , Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS (on) vs Drain Current
1.2
350
VGS=10V
1.1
VGS=20V
1
0.9
0
120
240
360
480
600
720
ID, Drain Current (A)
300
250
200
150
100
50
November, 2013
Normalized to
VGS=10V @ 167.5A
ID, DC Drain Current (A)
RDS (on) Drain to Source ON Resistance
VDS > I D(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
500
0
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM50UM13SAG Rev 3
ID, Drain Current (A)
VGS=10&15V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=167.5A
2.0
1.5
1.0
0.5
25
Threshold Voltage vs Temperature
100
125
150
Maximum Safe Operating Area
10000
ID, Drain Current (A)
0.9
0.8
0.7
0.6
1000
100 us
limited by RDSon
100
1 ms
Single pulse
TJ =150°C
TC=25°C
10
10 ms
1
25
50
75
100
125
150
1
Coss
1000
Crss
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
100
0
10
20
30
10
100
1000
VDS , Drain to Source Voltage (V)
TC, Case Temperature (°C)
40
50
VDS , Drain to Source Voltage (V)
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Gate Charge vs Gate to Source Voltage
14
ID=335A
VDS=100V
12 TJ =25°C
VDS=250V
10
8
VDS=400V
6
4
2
0
0
200
400
600
800
November, 2013
VGS (TH), Threshold Voltage
(Normalized)
75
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
C, Capacitance (pF)
50
1000
Gate Charge (nC)
5–7
APTM50UM13SAG Rev 3
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM50UM13SAG
APTM50UM13SAG
Delay Times vs Current
Rise and Fall times vs Current
160
110
70
50
80
tr
0
10
60
140
220
300
380
460
60
540
140
ID, Drain Current (A)
Switching Energy vs Current
300
380
460
540
Switching Energy vs Gate Resistance
24
VDS=333V
R G =0.8Ω
TJ=1 25 °C
L=100µH
10
8
Switching Energy (mJ)
Eon
Eoff
6
4
2
VDS=333V
I D=335A
TJ=1 25 °C
L=100µH
20
16
12
Eon
8
Eoff
4
0
60
140
220
300
380
460
0
540
Operating Frequency vs Drain Current
400
300
ZCS
200
100
VDS=333V
D=50%
R G =0.8Ω
TJ=1 25 °C
TC =75 °C
4
6
8
10
12
14
Gate Resistance (Ohms)
ZVS
Hard
switching
IDR, Reverse Drain Current (A)
ID, Drain Current (A)
2
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
100
150
200
250
300
0.2 0.4 0.6 0.8
1
November, 2013
1
0
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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6–7
APTM50UM13SAG Rev 3
Switching Energy (mJ)
220
ID, Drain Current (A)
12
Frequency (kHz)
tf
40
td(on)
30
VDS=333V
R G =0.8Ω
TJ=1 25 °C
L=100µH
120
td(off)
VDS=333V
R G =0.8Ω
TJ=1 25 °C
L=100µH
t r and t f (ns)
td(on) and td(off) (ns)
90
APTM50UM13SAG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM50UM13SAG Rev 3
November, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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