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APTC60AM18SCG
Phase leg Series & SiC parallel diodes
Super Junction MOSFET Power Module
Application
•
Motor control
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
VBUS
Q1
G1
Features
• CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
OUT
S1
Q2
G2
0/VBUS
S2
VDSS = 600V
RDSon = 18mΩ max @ Tj = 25°C
ID = 143A @ Tc = 25°C
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
•
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
143
107
572
±30
18
833
20
1
1800
Unit
V
A
November, 2013
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTC60AM18SCG – Rev 4
Symbol
VDSS
APTC60AM18SCG
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
2.1
3
Min
Typ
28
10.2
0.85
VGS = 0V,VDS = 600V
VGS = 10V, ID = 71.5A
VGS = VDS, ID = 4mA
VGS = ±20 V, VDS = 0V
Max
100
18
3.9
±400
Unit
µA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
nF
1036
VGS = 10V
VBus = 300V
ID = 143A
116
nC
444
21
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 143A
RG = 1.2Ω
30
ns
283
84
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2Ω
1608
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2Ω
2630
µJ
3920
µJ
4824
0.15
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
trr
Qrr
Er
RthJC
www.microsemi.com
Min
600
Typ
150
200
1.6
1.5
125
220
9.4
2
V
ns
November, 2013
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR = 600V
DC Forward Current
Tc = 80°C
Tj = 25°C
IF = 200A
Diode Forward Voltage
VGE = 0V
Tj = 150°C
Tj = 25°C
Reverse Recovery Time
Tj = 150°C
IF = 200A
Tj = 25°C
Reverse Recovery Charge
VR = 300V
T
j = 150°C
di/dt =2800A/µs
Tj = 25°C
Reverse Recovery Energy
Tj = 150°C
Junction to Case Thermal Resistance
µC
19.8
2.2
mJ
4.8
0.39
°C/W
2–8
APTC60AM18SCG – Rev 4
Symbol
VRRM
IRM
IF
APTC60AM18SCG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=600V
Min
600
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
Max
400
800
80
1.6
2.0
1600
8000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 80A
QC
Total Capacitive Charge
IF = 80A, VR = 600V
di/dt =2000A/µs
224
Q
Total Capacitance
f = 1MHz, VR = 200V
520
f = 1MHz, VR = 400V
400
RthJC
Junction to Case Thermal Resistance
Unit
V
µA
A
1.8
2.4
V
nC
pF
0.35
°C/W
Thermal and package characteristics
Symbol Characteristic
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
TJ
TJOP
TSTG
TC
Torque
Wt
Operating junction temperature range
Parallel diode
Series diode & CoolMOS™
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
-40
3
2
Max
175
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–8
APTC60AM18SCG – Rev 4
November, 2013
SP6 Package outline (dimensions in mm)
APTC60AM18SCG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.16
0.9
0.14
0.12
0.7
0.1
0.5
0.08
0.06
0.3
0.04
0.1
0.02
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
300
VGS=15&10V
600
6.5V
ID, Drain Current (A)
6V
500
400
5.5V
300
5V
200
4.5V
100
VDS > I D(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
250
200
TJ=125°C
150
100
TJ=25°C
50
4V
0
5
10
15
20
0
25
0
ID, DC Drain Current (A)
RDS (on) Drain to Source ON Resistance
VGS=10V
1.05
VGS=20V
0.95
0.9
0
40
80
120
160
200
3
4
5
6
DC Drain Current vs Case Temperature
140
RDS(on) vs Drain Current
1.1
1
2
VGS , Gate to Source Voltage (V)
VDS , Drain to Source Voltage (V)
Normalized to
VGS=10V @ 71.5A
1
240
120
100
80
60
40
20
November, 2013
0
0
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
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4–8
APTC60AM18SCG – Rev 4
ID, Drain Current (A)
700
1.2
1.1
1.0
0.9
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
25
75
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.0
1000
limited by RDSon
ID, Drain Current (A)
0.9
0.8
1 ms
10
0.7
25
50
75
100
125
1
Coss
1000
Crss
100
10
20
30
10
100
1000
40
Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Ciss
10
10 ms
VDS , Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
0
Single pulse
TJ =150°C
TC=25°C
1
150
TC, Case Temperature (°C)
10000
100µs
100
12
ID=143A
TJ =25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
50
0
200
400
600
800
November, 2013
VGS (TH), Threshold Voltage
(Normalized)
50
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
C, Capacitance (pF)
VGS=10V
I D= 143A
2.5
1000 1200
Gate Charge (nC)
VDS, Drain to Source Voltage (V)
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5–8
APTC60AM18SCG – Rev 4
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
RDS (on), Drain to Source ON resistance
(Normalized)
APTC60AM18SCG
APTC60AM18SCG
Delay Times vs Current
Rise and Fall times vs Current
350
120
td(off)
250
VDS=400V
R G =1.2Ω
TJ=1 25 °C
L=100µH
200
150
VDS=400V
R G =1.2Ω
TJ=1 25 °C
L=100µH
100
tr and tf (ns)
t d(on) and t d(off) (ns)
300
100
80
60
40
tr
50
20
td(on)
0
0
40
80
120
160
200
0
240
0
ID, Drain Current (A)
40
80
120
160
200
240
ID, Drain Current (A)
Switching Energy vs Current
Switching Energy vs Gate Resistance
20
10
VDS=400V
R G =1.2Ω
TJ=1 25 °C
L=100µH
8
Eoff
Switching Energy (mJ)
Switching Energy (mJ)
tf
6
4
Eon
2
15
40
80
120
160
200
Eoff
10
0
0
VDS=400V
I D=143A
TJ=1 25 °C
L=100µH
240
ID, Drain Current (A)
Eon
5
0
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
140
ZCS
100
80
ZVS
VDS=400V
D=50%
R G =1.2Ω
TJ=1 25 °C
TC =75 °C
60
40
Hard
switching
20
50
70
90
110
November, 2013
0
130
ID, Drain Current (A)
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6–8
APTC60AM18SCG – Rev 4
Frequency (kHz)
120
APTC60AM18SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
1600
TJ=25°C
120
TJ=75°C
IR Reverse Current (µA)
IF Forward Current (A)
Reverse Characteristics
Forward Characteristics
160
TJ=175°C
80
TJ=125°C
40
1400
1000
0
0
0.5
1
1.5
2
2.5
3
TJ=175°C
1200
3.5
VF Forward Voltage (V)
800
TJ=125°C
TJ=75°C
600
400
TJ=25°C
200
0
200
300 400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
2500
2000
1500
1000
0
1
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
www.microsemi.com
7–8
November, 2013
500
APTC60AM18SCG – Rev 4
C, Capacitance (pF)
3000
APTC60AM18SCG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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8–8
APTC60AM18SCG – Rev 4
November, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.