CYSTEKEC MTP0703BQ8

CYStech Electronics Corp.
Spec. No. : C451Q8
Issued Date : 2008.12.17
Revised Date :
Page No. : 1/6
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP0703BQ8
BVDSS
ID
RDSON(max)
-30V
-15A
7.5mΩ
Description
The MTP0703BQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• RDS(ON)[email protected]=-10V, ID=-12A
RDS(ON)[email protected]=-5V, ID=-9A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and Halogen-free package
Equivalent Circuit
MTP0703BQ8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTP0703BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C451Q8
Issued Date : 2008.12.17
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25 °C
Continuous Drain Current @TC=100 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω
TA=25 °C
Power Dissipation
TA=100 °C
Operating Junction and Storage Temperature Range
Symbol
Limits
Unit
BVDSS
VGS
ID
ID
IDM
IAS
EAS
-30
±25
-15
-11
-60
-25
31.25
3
1.5
-55~+175
V
V
A
A
A
A
mJ
W
W
°C
PD
Tj ; Tstg
Note : 1.Pulse width limited by maximum junction temperature.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
ID(ON)
RDS(ON)
GFS
(Note 1)
(Note 1)
(Note 1)
-30
-1
-15
-
-1.5
6
9
28
-3
±100
-1
-10
7.5
12
-
-
15545
3776
3507
26
22
75
15
56
40
15
18
3
-
V
V
nA
μA
μA
A
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±25V, VDS=0
VDS=-24V, VGS=0
VDS=-20V, VGS=0, Tj=125°C
VDS=-5V, VGS=-10V
ID=-12A, VGS=-10V
ID=-9A, VGS=-5V
VDS=-5V, ID=-12A
pF
VDS=-15V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-1A,
VGS=-10V, RG=2.7Ω
nC
VDS=-15V, ID=-10A,
VGS=-10V,
Ω
VGS=15mV, VDS=0, f=1MHz
mΩ
Dynamic
Ciss
Coss
Crss
td(ON) (Note 1&2)
tr
(Note 1&2)
td(OFF) (Note 1&2)
tf
(Note 1&2)
Qg(VGS=10V) (Note 1&2)
Qg(VGS=5V) (Note 1&2)
Qgs (Note 1&2)
Qgd (Note 1&2)
Rg
MTP0703BQ8
CYStek Product Specification
Spec. No. : C451Q8
Issued Date : 2008.12.17
Revised Date :
Page No. : 3/6
CYStech Electronics Corp.
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Min.
Source-Drain Diode
IS
ISM(Note 3)
VSD(Note 1)
trr
Qrr
-
Typ.
Max.
52
60
-3.6
-14.4
-1.2
-
Unit
Test Conditions
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Thermal Resistance Ratings
Thermal Resistance
Symbol
Typical
Maximum
Junction-to-Case
RθJC
25
Junction-to-Ambient (Note)
RθJA
50
Unit
°C / W
Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper.
MTP0703BQ8
CYStek Product Specification
Spec. No. : C451Q8
Issued Date : 2008.12.17
Revised Date :
Page No. : 4/6
CYStech Electronics Corp.
Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
2.5
60
- 6.0V
48
2.4
- 4.5V
RDS(ON), Normalized
Drain-Source On-Resistance
VGS= - 10V
-ID- Drain Current(A)
- 4.0V
36
- 3.5V
24
- 3.0V
12
2.2
VGS=-3.5V
2.0
1.8
-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-10V
1.0
0
1
0
2
0.0
3
1.6
On-Resistance Variation with Temperature
I D = - 7.5 A
0.025
RDS(ON) - On-Resistance(Ω)
RDS(on) - Normalized
Drain-Source On-Resistance
60
On-Resistance Variation with Gate-Source Voltage
1.4
1.2
1.0
0.8
0.020
0.015
TA = 125° C
0.010
0.005
TA = 25° C
0
75 100
0
25
50
TJ - Junction Temperature (°C)
-25
125
150
2
175
VDS = - 5V
8
10
VGS = 0V
10
- 55° C
-Is - Reverse Drain Current(A)
25° C
30
TA = 125°C
20
4
6
- VGS- Gate-Source Voltage( V )
Body Diode Forward Voltage Variation with Source Current and Temperature
100
Transfer Characteristics
40
-I D - Drain Current(A)
45
0.030
I D= - 15 A
VGS = - 10V
0.6
-50
15
30
- ID, Drain Current( A)
0
-VDS- Drain-to-Source Voltage(V)
10
TA = 125°C
1
25° C
0.1
-55°C
0.01
0.001
0
1.5
0.0001
2
2.5
3
-VGS - Gate-to-Source Voltage(V)
MTP0703BQ8
3.5
4
0
0.6
0.2
0.4
0.8
-VSD - Body Diode Forward Voltage(V)
1.0
1.2
CYStek Product Specification
Spec. No. : C451Q8
Issued Date : 2008.12.17
Revised Date :
Page No. : 5/6
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Capacitance Characteristics
Gate Charge Characteristics
20000
10
VDS = - 5V
8
16000
- 10V
- 15V
6
4
12000
8000
Coss
4000
2
Crss
0
0
0
15
30
Qg - Gate Charge(nC)
45
60
0
75
Maximum Safe Operating Area
RDS(ON) LIMIT
10
1s
10s
1
50
100μs
1ms
10ms
100ms
DC
VGS=-10V
SINGLEPULSE
RθJA=125°C/W
TA= 25°C
0.1
0.01
0.01
0.1
1
10
15
5
10
- VDS, Drain-to-Source Volt age(V)
100
20
25
30
Single Pulse Maximum Power Dissipation
Single Pulse
RθJA= 125° C/ W
TA = 25° C
40
P(pk),Peak Transient Power(W)
100
- ID, Drain Curent( A )
f = 1 MHz
VGS = 0 V
Ciss
Capacitance(pF)
- VGS - Gate-to-Source Voltage(V)
ID = - 15A
30
20
10
0
0.001
0.01
0.1
-VDS, Drain-Source Voltage( V)
1
t 1 ,Time (sec)
10
100
1000
r(t), Normalized Effetive Transient
Thermal Resistance
Transient Thermal Resistance Curve
1
D=0.5
RθJA(t)= r(t) * RθJA
0.2
RθJA= 125° C/W
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1,TIME( sec )
MTP0703BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C451Q8
Issued Date : 2008.12.17
Revised Date :
Page No. : 6/6
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
0703
□□□□
I
Date Code
C
B
H
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP0703BQ8
CYStek Product Specification