CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP0703BQ8 BVDSS ID RDSON(max) -30V -15A 7.5mΩ Description The MTP0703BQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=7.5mΩ@VGS=-10V, ID=-12A RDS(ON)=12mΩ@VGS=-5V, ID=-9A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit MTP0703BQ8 Outline SOP-8 G：Gate S：Source D：Drain MTP0703BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C Continuous Drain Current @TC=100 °C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω TA=25 °C Power Dissipation TA=100 °C Operating Junction and Storage Temperature Range Symbol Limits Unit BVDSS VGS ID ID IDM IAS EAS -30 ±25 -15 -11 -60 -25 31.25 3 1.5 -55~+175 V V A A A A mJ W W °C PD Tj ; Tstg Note : 1.Pulse width limited by maximum junction temperature. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS IDSS ID(ON) RDS(ON) GFS (Note 1) (Note 1) (Note 1) -30 -1 -15 - -1.5 6 9 28 -3 ±100 -1 -10 7.5 12 - - 15545 3776 3507 26 22 75 15 56 40 15 18 3 - V V nA μA μA A S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-20V, VGS=0, Tj=125°C VDS=-5V, VGS=-10V ID=-12A, VGS=-10V ID=-9A, VGS=-5V VDS=-5V, ID=-12A pF VDS=-15V, VGS=0, f=1MHz ns VDS=-15V, ID=-1A, VGS=-10V, RG=2.7Ω nC VDS=-15V, ID=-10A, VGS=-10V, Ω VGS=15mV, VDS=0, f=1MHz mΩ Dynamic Ciss Coss Crss td(ON) (Note 1&2) tr (Note 1&2) td(OFF) (Note 1&2) tf (Note 1&2) Qg(VGS=10V) (Note 1&2) Qg(VGS=5V) (Note 1&2) Qgs (Note 1&2) Qgd (Note 1&2) Rg MTP0703BQ8 CYStek Product Specification Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 3/6 CYStech Electronics Corp. Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr - Typ. Max. 52 60 -3.6 -14.4 -1.2 - Unit Test Conditions A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Thermal Resistance Ratings Thermal Resistance Symbol Typical Maximum Junction-to-Case RθJC 25 Junction-to-Ambient (Note) RθJA 50 Unit °C / W Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper. MTP0703BQ8 CYStek Product Specification Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 4/6 CYStech Electronics Corp. Characteristic Curves On-Resistance Variation with Drain Current and Gate Voltage On-Region Characteristics 2.5 60 - 6.0V 48 2.4 - 4.5V RDS(ON), Normalized Drain-Source On-Resistance VGS= - 10V -ID- Drain Current(A) - 4.0V 36 - 3.5V 24 - 3.0V 12 2.2 VGS=-3.5V 2.0 1.8 -4.0V 1.6 -4.5V 1.4 -5.0V -6.0V 1.2 -10V 1.0 0 1 0 2 0.0 3 1.6 On-Resistance Variation with Temperature I D = - 7.5 A 0.025 RDS(ON) - On-Resistance(Ω) RDS(on) - Normalized Drain-Source On-Resistance 60 On-Resistance Variation with Gate-Source Voltage 1.4 1.2 1.0 0.8 0.020 0.015 TA = 125° C 0.010 0.005 TA = 25° C 0 75 100 0 25 50 TJ - Junction Temperature (°C) -25 125 150 2 175 VDS = - 5V 8 10 VGS = 0V 10 - 55° C -Is - Reverse Drain Current(A) 25° C 30 TA = 125°C 20 4 6 - VGS- Gate-Source Voltage( V ) Body Diode Forward Voltage Variation with Source Current and Temperature 100 Transfer Characteristics 40 -I D - Drain Current(A) 45 0.030 I D= - 15 A VGS = - 10V 0.6 -50 15 30 - ID, Drain Current( A) 0 -VDS- Drain-to-Source Voltage(V) 10 TA = 125°C 1 25° C 0.1 -55°C 0.01 0.001 0 1.5 0.0001 2 2.5 3 -VGS - Gate-to-Source Voltage(V) MTP0703BQ8 3.5 4 0 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 CYStek Product Specification Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 5/6 CYStech Electronics Corp. Characteristic Curves(Cont.) Capacitance Characteristics Gate Charge Characteristics 20000 10 VDS = - 5V 8 16000 - 10V - 15V 6 4 12000 8000 Coss 4000 2 Crss 0 0 0 15 30 Qg - Gate Charge(nC) 45 60 0 75 Maximum Safe Operating Area RDS(ON) LIMIT 10 1s 10s 1 50 100μs 1ms 10ms 100ms DC VGS=-10V SINGLEPULSE RθJA=125°C/W TA= 25°C 0.1 0.01 0.01 0.1 1 10 15 5 10 - VDS, Drain-to-Source Volt age(V) 100 20 25 30 Single Pulse Maximum Power Dissipation Single Pulse RθJA= 125° C/ W TA = 25° C 40 P(pk),Peak Transient Power(W) 100 - ID, Drain Curent( A ) f = 1 MHz VGS = 0 V Ciss Capacitance(pF) - VGS - Gate-to-Source Voltage(V) ID = - 15A 30 20 10 0 0.001 0.01 0.1 -VDS, Drain-Source Voltage( V) 1 t 1 ,Time (sec) 10 100 1000 r(t), Normalized Effetive Transient Thermal Resistance Transient Thermal Resistance Curve 1 D=0.5 RθJA(t)= r(t) * RθJA 0.2 RθJA= 125° C/W 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1,TIME( sec ) MTP0703BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 6/6 SOP-8 Dimension Right side View G Top View A Marking: 0703 □□□□ I Date Code C B H J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP0703BQ8 CYStek Product Specification