MTBA5C10Q8

Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 1/10
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10Q8
BVDSS
ID
RDSON(MAX.)
N-CH
100V
3A
150mΩ
P-CH
-100V
-2.5A
250mΩ
Description
The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTBA5C10Q8
CYStek Product Specification
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 2/10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Limits
N-channel
P-channel
100
-100
Unit
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current @TC=25 °C
ID
3
-2.5
A
Continuous Drain Current @TC=100 °C
ID
2.1
-1.8
A
IDM
12
-10
A
Pulsed Drain Current (Note 1)
Power Dissipation @TA=25°C
PD
Power Dissipation @TA=100°C
2.4
W
1.3
Tj; Tstg
-55~+175
°C
Thermal Resistance, Junction-to-Case
RθJC
25
°C/W
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
62.5
°C/W
Operating Junction and Storage Temperature Range
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
100
1.0
12
-
125
168
8
3.0
±100
1
25
150
225
-
V
V
nA
μA
μA
A
-
740
62
50
15
35
25
25
18.8
3.8
4.5
-
-
3
1.3
-
-
12
-
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*ID(ON)
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VF(S-D)
*IS
*ISM
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=80V, VGS=0
VDS=70V, VGS=0, Tj=125°C
VGS=10V, VDS=5V
ID=2.5A, VGS=10V
ID=2A, VGS=5V
VDS=5V, ID=2.5A
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=80V, ID=2.5A, VGS=10V
V
VGS=0V, IF=3A
mΩ
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTBA5C10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 3/10
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-100
-1.0
-10
-
210
280
7
-3.0
±100
-1
-25
250
375
-
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VF(S-D)
*IS
-
1066
365
55
12
55
40
40
31
6.3
4.5
-
-
-
1.3
-2.5
*ISM
-
-
-10
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-80V, VGS=0
VDS=-70V, VGS=0, Tj=125°C
VGS=-10V, VDS=-5V
ID=-1.5A, VGS=-10V
ID=-1A, VGS=-5V
VDS=-5V, ID=-1.5A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-80V, ID=-1.5A, VGS=-10V
V
VGS=0V, IF=2.5A
V
nA
μA
A
mΩ
Dynamic
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTBA5C10Q8
MTBA5C10Q8
Package
Shipping
SOP-8
2500 pcs / Tape & Reel
(Pb-free lead plating & halogen-freepackage)
Marking
BA5C10
CYStek Product Specification
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 4/10
CYStech Electronics Corp.
N-channel Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
2.4
15
VGS = 10V
VGS = 5.0 V
2.0
6.0V
R DS(ON) -Normalized
Drain-Source On-Resistance
ID - Drain Current( A )
2.2
8.0V 7.0V
12
9
6
5.0V
3
0
4
3
2
VDS - Drain-Source Voltage( V )
On-Resistance Variation with Temperature
1.9
7.0 V
1.4
8.0 V
1.2
10 V
1.0
9
12
6
I D - Drain Current( A )
On-Resistance Variation with Gate-Source Voltage
0
3
0.45
ID = 2.5A
VGS = 10V
1.3
1.0
0.7
0.35
0.30
0.25
0.20
TA = 125°C
0.15
TA = 25°C
0.10
0.4
-50
-25
100
0
25
50
75
TJ - Junction Temperature (°C)
125
150
0.05
4
2
100
VDS = 10V
Is - Reverse Drain Current( A )
ID - Drain Current( A )
TA = -55°C
8
25°C
6
125°C
4
2
2
MTBA5C10Q8
10
V GS = 0V
10
0
8
6
VGS - Gate-Source Voltage( V )
Body Diode Forward Voltage Variation with
Source Current and Temperature
Transfer Characteristics
12
15
I D = 1.5 A
0.40
1.6
R DS(ON) - On-Resistance( Ω )
RDS(on) - Normalized
Drain-Source On-Resistance
6.0 V
1.6
0.8
5
1
0
1.8
3
4
5
VGS - Gate-Source Voltage( V )
6
10
1
T A = 125°C 25°C
0.1
-55°C
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
VSD - Body Diode Forward Voltage( V )
1.2
1.4
CYStek Product Specification
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 5/10
CYStech Electronics Corp.
N-channel Characteristic Curves(Cont.)
Gate Charge Characteristics
10
ID = 2.5A
f = 1M H z
V GS = 0 V
900
800
VDS = 50V
Capacitance( pF )
8
VGS - Gate Source Voltage( V )
Capacitance Characteristics
1000
80V
6
4
Ciss
700
600
500
400
300
200
2
100
0
5
0
10
Q g - Gate Charge( nC )
15
L im
R DS
(O
10
it
10
N)
1m
1
10
10
DC
0.1
0m
m
0u
1
VDS
100
Single Pulse Maximum Power Dissipation
50
uS
S
S
S
S
VGS = 10V
Single Pulse
R θ JA= 125°C/W
T A = 25°C
0.01
0.1
20
40
60
80
VD S - Drain-Source Voltage( V )
0
P( pk ),Peak Transient Power( W )
10
ID - Drain Current( A )
20
M aximum Safe Operating Area
100
Coss
Crss
0
1000
100
10
- Drain-Source Voltage( V )
Single Pulse
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
1
0.1
t 1 ,Time ( sec )
0.01
10
100
1000
Transient Thermal Response Curve
1
r( t ),Normalized Effective
Transient Thermal Resistance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
P DM
0.01
t1
0.01
t2
1.Duty Cycle,D =
t1
t2
Single Pulse
2.RθJA =125°C/W
3.TJ - TA = P * RθJA (t)
4.R JA (t)=r(t) + RθJA
θ
0.001
10
-4
MTBA5C10Q8
10
-3
10
-2
-1
10
t1 ,Time (sec)
1
10
100
1000
CYStek Product Specification
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 6/10
CYStech Electronics Corp.
P-channel Characteristic Curves
10
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
VGS = - 10.0V
2.5
VGS = - 5.0 V
- 9.0V
- 8.0V
6
4
R DS(ON) -Normalized
Drain-Source On-Resistance
-ID - Drain Current( A )
8
- 7.0V
- 6.0V
- 5.0V
2
2
- 6.0 V
- 7.0 V
1.5
- 8.0 V
- 9.0 V
- 10.0 V
1
0.5
0
1
0
4
2
3
-VDS - Drain-Source Voltage( V )
0
5
4
6
- ID - Drain Current(A)
8
10
On-Resistance Variation with Gate-Source Voltage
On-Resistance Variation with Temperature
1.9
2
0.80
ID = -1.5A
ID = - 1 A
VGS = - 10V
R DS(ON) - On-Resistance(Ω)
R DS(on) - Normalized
Drain-Source On-Resistance
1.6
1.3
1.0
0.60
0.40
T A = 125°C
T A = 25°C
0.20
0.7
0.4
-50
0
75 100
0
25
50
TJ - Junction Temperature (°C)
-25
125
150
2
10
On-Resistance Variation with Gate-Source Voltage
On-Resistance Variation with Temperature
1.9
4
6
8
- VGS - Gate-Source Voltage( V )
0.80
ID = -1.5A
ID = - 1 A
VGS = - 10V
R DS(ON) - On-Resistance(Ω)
R DS(on) - Normalized
Drain-Source On-Resistance
1.6
1.3
1.0
0.60
0.40
T A = 125°C
T A = 25°C
0.20
0.7
0.4
-50
0
-25
MTBA5C10Q8
75 100
0
25
50
TJ - Junction Temperature (°C)
125
150
2
4
6
8
- VGS - Gate-Source Voltage( V )
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 7/10
P-channel Characteristic Curves(Cont.)
Gate Charge Characteristics
10
I D = - 1.5A
f = 1M Hz
V GS = 0 V
1350
1200
V DS = - 50V
Capacitance( pF )
8
- VGS - Gate-Source Voltage( V )
C ap a cita n ce C h a ra cte ristics
1500
- 80V
6
4
2
C iss
1050
900
750
600
450
C o ss
300
150
0
0
10
20
Q g - Gate Charge(nC)
30
10
R
1
DS
(
)
ON
L im
10
it
1m
10
10
DC
0.1
0m
m
0u
Single Pulse Maximum Power Dissipation
uS
S
S
S
S
VGS = -10V
Single Pulse
R θJA= 125°C/W
TA = 25°C
0.01
0.1
1
100
50
P( pk ),Peak Transient Power( W )
-ID - Drain Current( A )
10
20
40
60
80
-VD S - D ra in -So u rce V o ltag e ( V )
0
Maximum Safe Operating Area
100
C rss
0
40
40
30
20
10
0
0.001
1000
100
10
-VDS - Drain-Source Voltage( V )
Single Pulse
RθJA = 125°C/W
TA = 25°C
1
0.1
t 1 ,Time ( sec )
0.01
10
100
1000
Transient Thermal Response Curve
1
r( t ),Normalized Effective
Transient Thermal Resistance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
P DM
0.01
t1
0.01
t2
1.Duty Cycle,D =
t1
t2
Single Pulse
2.RθJA =125°C/W
3.TJ - TA = P * RθJA (t)
4.R JA (t)=r(t) + RθJA
θ
0.001
10
MTBA5C10Q8
-4
10
-3
10
-2
-1
10
t1 ,Time (sec)
1
10
100
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
MTBA5C10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 9/10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA5C10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 10/10
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
E
D
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTBA5C10Q8
CYStek Product Specification