CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 BVDSS ID RDSON(max) N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • RoHS compliant package Equivalent Circuit MTC2804Q8 Outline SOP-8 G：Gate S：Source D：Drain MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C (Note 1) Continuous Drain Current @TC=100 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @TA=25°C Linear Derating Factor BVDSS VGS ID ID IDM Pd (Note 1) Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case Tj, Tstg Rth,ja Rth,jc Limits N-channel P-channel 40 ±20 7 6 28 -40 ±20 -6 -5 -24 2.4 0.016 -55~+175 62.5 25 Unit V V A A A W W / °C °C °C/W °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit 40 1.0 - 1.5 25 30 19 3.0 ±100 1 25 28 36 - V V nA μA μA 916 79 56 2.3 7.2 11 6 9.1 2.3 3 - - 1.3 7 20 *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=32V, VGS=0 VDS=30V, VGS=0, Tj=125°C ID=7A, VGS=10V ID=6A, VGS=7V VDS=5V, ID=7A pF VDS=20V, VGS=0, f=1MHz ns VDS=10V, ID=1A, VGS=10V, RG=6Ω nC VDS=20V, ID=7A, VGS=10V V A A VGS=0V, IS=7A mΩ *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 3/9 P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit -40 -1.0 - -1.5 38 46 11 -3.0 ±100 -1 -25 44 55 - V V nA μA μA 1039 327 301 6.5 9.5 18 10 9 1.5 2.9 - - -1.3 -6 -20 *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-32V, VGS=0 VDS=-30V, VGS=0, Tj=125°C ID=-6A, VGS=-10V ID=-5A, VGS=-7V VDS=-5V, ID=-6A pF VDS=-20V, VGS=0, f=1MHz ns VDS=-10V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-20V, ID=-6A, VGS=-10V V VGS=0V, IS=-6A mΩ A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC2804Q8 CYStek Product Specification Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 4/9 CYStech Electronics Corp. N-channel Characteristic Curves On-Resistance Variation with Drain Current and Gate Voltage On-Region Characteristics 2.4 25 VGS= 10V 2.2 8.0V 7.0V 20 RDS(ON) -Normalized Drain-Source On-Resistance 2.0 ID- Drain Current(A) 6.0V 15 10 5 0 1.8 VGS = 6.0 V 1.6 7.0 V 1.4 8.0 V 1.2 10 V 1.0 0.8 0 1 2 3 VDS - Drain-Source Voltage(V) 4 5 0 5 On-Resistance Variation with Temperature 15 10 I D - Drain Current(A) 25 20 On-Resistance Variation with Gate-to-Source Voltage 1.9 0.09 ID = 7A VGS = 10V ID = 3.5 A 0.08 0.07 1.3 0.06 RDS(ON) - On-Resistance(Ω) RDS(on) - Normalized Drain-Source On-Resistance 1.6 1.0 0.7 0.4 -50 -25 0 25 50 75 TJ - Junction Temperature (°C) 100 125 150 0.05 TA = 125°C 0.04 0.03 TA = 25°C 0.02 0.01 2 100 VDS= 10V V GS= 0V Is - Reverse Drain Current(A) ID- Drain Current(A) 15 TA = -55°C 12 25°C 9 125°C 6 3 0 3 MTC2804Q8 10 Body Diode Forward Voltage Variation with Source Current and Temperature Transfer Characteristics 18 8 4 6 VGS- Gate-Source Voltage(V) 4 5 VGS- Gate-to-Source Voltage(V) 6 7 T A= 125°C 10 25°C 1 -55°C 0.1 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD- Body Diode Forward Voltage(V) 1.2 1.4 CYStek Product Specification Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 5/9 CYStech Electronics Corp. N-channel Characteristic Curves(Cont.) Capacitance Characteristics Gate Charge Characteristics 1200 10 f = 1MHz VGS = 0 V ID = 7A Ciss 8 Capacitance( pF ) VGS - Gate Source Voltage(V) 900 20V VDS = 15V 6 4 600 300 2 Coss Crss 0 0 4 8 Q g - Gate Charge(nC) 0 12 0 16 ID - Drain Current( A ) P( pk ),Peak Transient Power( W ) 100μs 1ms 10ms 100ms 1 1s 10s DC VGS= 10V 0.1 Single Pulse RθJA= 125°C/ W TA = 25°C 0.01 0.1 40 50 Single Pulse RθJA = 125°C/ W TA = 25°C RDS(ON) Limit 10 30 Single Pulse Maximum Power Dissipation Maximum Safe Operating Area 100 10 20 VDS - Drain-Source Voltage( V ) 1 10 VDS - Drain-Source Voltage( V ) 40 30 20 10 0 0.001 100 0.01 0.1 1 t 1 ,Time ( sec ) 10 100 1000 Transient Thermal Response Curve 1 r( t ),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 0.01 1.Duty Cycle,D = t1 t2 Single Pulse 2.RθJA =125°C/ W 3.TJ - TA = P * RθJA (t) 4.R JA (t)=r(t) + RθJA θ 0.001 10 -4 MTC2804Q8 10 -3 10 -2 -1 10 t 1 ,Time (sec) 1 10 100 1000 CYStek Product Specification Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 6/9 CYStech Electronics Corp. P-channel Characteristic Curves On-Resistance Variation with Drain Current and Gate Voltage 25 On-Region Characteristics VGS = - 10.0V 2.5 - 8.0V 20 - 6.0V -ID- Drain Current(A) 15 10 5 0 2 RDS(ON) -Normalized Drain-Source On-Resistance - 7.0V VGS = - 6.0 V 1.5 - 7.0 V - 8.0 V - 10.0 V 1 0.5 1 2 3 -VDS- Drain-to-Source Voltage(V) 0 4 5 0 5 On-Resistance Variation with Temperature 1.9 10 15 - ID - Drain Current(A) 25 20 On-Resistance Variation with Gate-to-Source Voltage 0.2 ID = -6 A ID = - 3A VGS = - 10V RDS(ON) - On-Resistance(Ω) 1.3 1.0 0.7 0.1 TA = 125°C 0.05 TA = 25°C 0.4 -50 0 -25 75 25 50 0 TJ - Junction Temperature (°C) 100 125 150 2 Transfer Characteristics 12 VDS = - 10V 10 -ID - Drain Current( A ) 0.15 TA = -55°C 10 8 25°C 6 125°C 4 6 4 - VGS- Gate-to-Source Voltage(V) 2 8 10 Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) RDS(on) - Normalized Drain-Source On-Resistance 1.6 VGS = 0V TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0 2 MTC2804Q8 3 4 -VGS - Gate-Source Voltage( V ) 5 6 0 0.4 0.2 0.6 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 7/9 P-channel Characteristic Curves(Cont.) Gate Charge Characteristics Capacitance Characteristics 10 1500 I D = - 6A f = 1 MHz VGS = 0 V - VGS - Gate-to-Source Voltage(V) 8 1200 Ciss VDS = - 15V Capacitance(pF) - 20V 6 4 900 2 600 Coss 300 Crss 0 0 0 3 6 Qg - Gate Charge(nC) 9 50 Single Pulse RθJA = 125°C/ W TA = 25°C -I D - Drain Current( A ) P( pk ),Peak Transient Power( W ) RDS(ON) Limit 10 100μs 1ms 10ms 100ms 1 1s 10s DC VGS= 10V 0.1 Single Pulse RθJA= 125°C/ W TA = 25°C 0.01 0.1 40 30 Single Pulse Maximum Power Dissipation Maximum Safe Operating Area 100 20 10 - VDS, Drain-Source Voltage(V) 0 12 1 10 -VDS - Drain-Source Voltage( V ) 40 30 20 10 0 0.001 100 0.01 0.1 1 t 1 ,Time ( sec ) 10 100 1000 Transient Thermal Response Curve 1 r( t ),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 0.01 1.Duty Cycle,D = t1 t2 Single Pulse 2.RθJA =125°C/ W 3.TJ - TA = P * RθJA (t) 4.R JA (t)=r(t) + RθJA θ 0.001 10 MTC2804Q8 -4 10 -3 10 -2 -1 10 t 1 ,Time (sec) 1 10 100 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 8/9 Test Circuit and Waveforms MTC2804Q8 CYStek Product Specification Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A I C B Marking: Device Name 2804SS Date Code □□□□ H J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC2804Q8 CYStek Product Specification