CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP1403BQ8 BVDSS ID RDSON(max) -30V -12A 14mΩ Description The MTP1403BQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=14mΩ@VGS=-10V, ID=-12A RDS(ON)=21mΩ@VGS=-5V, ID=-9A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit MTP1403BQ8 Outline SOP-8 G：Gate S：Source D：Drain MTP1403BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C Continuous Drain Current @TC=100 °C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω TA=25 °C Power Dissipation TA=100 °C Operating Junction and Storage Temperature Range Symbol Limits Unit BVDSS VGS ID ID IDM IAS EAS -30 ±25 -12 -9 -48 -20 20 3 1.5 -55~+175 V V A A A A mJ W W °C PD Tj ; Tstg Note : 1.Pulse width limited by maximum junction temperature. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS IDSS ID(ON) RDS(ON) GFS (Note 1) (Note 1) (Note 1) -30 -1 -12 - -1.5 12 17 28 -3 ±100 -1 -10 14 21 - - 6375 1612 1481 26 22 75 15 56 40 15 18 - V V nA μA μA A S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-20V, VGS=0, Tj=125°C VDS=-5V, VGS=-10V ID=-12A, VGS=-10V ID=-9A, VGS=-5V VDS=-5V, ID=-12A pF VDS=-15V, VGS=0, f=1MHz ns VDS=-15V, ID=-1A, VGS=-10V, RG=2.7Ω nC VDS=-15V, ID=-10A, VGS=-10V, mΩ Dynamic Ciss Coss Crss td(ON) (Note 1&2) tr (Note 1&2) td(OFF) (Note 1&2) tf (Note 1&2) Qg(VGS=10V) (Note 1&2) Qg(VGS=5V) (Note 1&2) Qgs (Note 1&2) Qgd (Note 1&2) MTP1403BQ8 CYStek Product Specification Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 3/6 CYStech Electronics Corp. Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr - Typ. Max. 52 60 -3.6 -14.4 -1.2 - Unit Test Conditions A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Thermal Resistance Ratings Thermal Resistance Symbol Typical Maximum Junction-to-Case RθJC 25 Junction-to-Ambient (Note) RθJA 50 Unit °C / W Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper. MTP1403BQ8 CYStek Product Specification Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 4/6 CYStech Electronics Corp. Characteristic Curves On-Region Characteristics On-Resistance Variation with Drain Current and Gate Voltage 50 2.4 VGS= - 10V - 6.0V 40 - 4.5V 2.0 RDS(ON) -Normalized Drain-Source On-Resistance -ID- Drain Current(A) - 4.0V 30 - 3.5V 20 - 3.0V 10 0 1 0 VGS = - 3.5 V 2.2 2 - 4.0 V 1.8 - 4.5 V 1.6 -5V 1.4 -6V 1.2 -7V 1 - 10 V 0.8 3 0 10 -VDS- Drain-to-Source Voltage(V) 1.6 On-Resistance Variation with Temperature 50 On-Resistance Variation with Gate-to-Source Voltage ID = - 6 A 0.05 RDS(ON) - On-Resistance(Ω) 1.4 RDS(on) - Normalized Drain-Source On-Resistance 40 0.06 I D= - 12 A VGS = - 10V 1.2 1.0 0.8 0.04 0.03 TA = 125° C 0.02 0.01 TA = 25° C 0.6 -50 75 100 0 25 50 TJ - Junction Temperature (° C) -25 125 150 0 175 Transfer Characteristics VDS = - 5V 8 10 VGS = 0V 10 -Is - Reverse Drain Current(A) 25° C - 55° C 30 TA = 125°C 20 4 6 - VGS- Gate-to-Source Voltage(V) 2 Body Diode Forward Voltage Variation with Source Current and Temperature 100 40 -I D - Drain Current(A) 20 30 - I D - Drain Current(A) 10 TA = 125° C 1 25°C 0.1 -55°C 0.01 0.001 0 1.5 2 2.5 3 -VGS - Gate-to-Source Voltage(V) MTP1403BQ8 3.5 4 0.0001 0 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 CYStek Product Specification Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 5/6 CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 Capacitance Characteristics 7500 8 f = 1 MHz VGS = 0 V Ciss VDS = - 5V - 10V 6000 - 15V Capacitance(pF) - VGS - Gate-to-Source Voltage(V) ID = - 12A 6 4 4500 3000 Coss 1500 2 0 Crss 0 15 30 Qg - Gate Charge(nC) 0 45 60 0 75 15 5 10 - VDS, Drain-to-Source Voltage(V) 20 25 30 Maximum Safe Operating Area 100 50 RDS(ON) Limit 1ms 40 10ms 100ms 1s 10s DC 1 0.1 0.01 0.1 Single Pulse RθJA= 125° C/ W TA = 25° C 100μs P(pk),Peak Transient Power(W) -Is , Drain Current(A) 10 Single Pulse Maximum Power Dissipation VGS = - 10 V Single Pulse RθJA = 125°C / W TA = 25°C 1 10 -VSD , Drain - Source Voltage(V) 30 20 10 0 0.001 100 0.01 0.1 1 t 1 ,Time (sec) 10 100 1000 Transient Thermal Response Curve 1 r(t),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 0.01 t2 1.Duty Cycle,D = t1 t2 2.RθJA =125°C/ W 3.TJ - TA = P * RθJA (t) Single Pulse 4.RθJA(t)=r(t) + RθJA 0.001 10 -4 MTP1403BQ8 -3 10 -2 10 -1 10 t ,Time (sec) 1 10 100 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 6/6 SOP-8 Dimension Right side View G Top View A Marking: 1403 □□□□ I Date Code C B H J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP1403BQ8 CYStek Product Specification