SSM4410M
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low on-resistance
BV
D
D
Fast switching
R DS(ON)
D
D
Simple drive requirement
S
30V
13.5mΩ
10A
ID
G
SO-8
DSS
S
S
Description
D
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for commercial and industrial
surface mount applications and well suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=70°C
Rating
Units
30
V
± 20
V
3
10
A
3
8
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
50
A
PD @ TA=25°C
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-amb
Rev.2.02 12/29/2003
Parameter
Thermal Resistance Junction-ambient
Max.
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Value
Unit
50
°C/W
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SSM4410M
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.037
-
V/°C
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
-
13.5
mΩ
VGS=4.5V, ID=5A
-
-
22
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=15V, ID=10A
-
20
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=55oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
16.6
-
nC
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
IGSS
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
10.6
-
nC
VDS=25V
-
9.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
12.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=5V
-
25.4
-
ns
tf
Fall Time
RD=25Ω
-
33
-
ns
Ciss
Input Capacitance
VGS=0V
-
745
-
pF
Coss
Output Capacitance
VDS=15V
-
510
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
Min.
Typ.
-
-
2.3
A
-
-
50
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25°C, IS=2.3A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Rev.2.02 12/29/2003
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2 of 6
SSM4410M
150
200
o
T C =150 o C
V G =10V
T C =25 C
V G =10V
V G =8.0V
V G =8.0V
ID , Drain Current (A)
ID , Drain Current (A)
150
V G =6.0V
100
100
V G =6.0V
50
V G =4.0V
50
V G =4.0V
0
0
0
1
2
3
4
5
6
7
0
8
2
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.8
I D =10A
V G =10V
I D =10A
T C =25 o C
1.6
Normalized R DS(ON)
18
RDSON (mΩ )
4
V DS , Drain-to-Source Voltage (V)
16
14
1.4
1.2
1
12
0.8
0.6
10
3
4
5
6
7
8
9
10
11
-50
0
Fig 3. On-Resistance v.s. Gate Voltage
Rev.2.02 12/29/2003
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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3 of 6
12
3
10
2.5
8
2
PD (W)
ID , Drain Current (A)
SSM4410M
6
1.5
4
1
2
0.5
0
0
25
50
75
100
125
0
150
30
T c , Case Temperature ( o C )
60
90
120
150
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
10
Normalized Thermal Response (R thja)
DUTY=0.5
ID (A)
1ms
10ms
1
100ms
1s
T c =25 o C
Single Pluse
0.1
0.1
1
10
100
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
0.001
0.0001
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
0.001
V DS (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.02 12/29/2003
0.01
Fig 8. Effective Transient Thermal Impedance
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4 of 6
SSM4410M
f=1.0MHz
10000
12
I D =10A
V DS =15V
8
1000
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
Coss
Crss
4
100
2
0
10
0
5
10
15
20
25
1
7
13
19
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100.00
10.00
2
o
o
T j =25 C
VGS(th) (V)
IS(A)
T j =150 C
1.00
1
0.10
0.01
0
0
0.4
0.8
1.2
-50
0
100
150
T j , Jujnction Temperature ( C )
Fig 11. Forward Characteristic of
Reverse Diode
Rev.2.02 12/29/2003
50
o
V SD (V)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM4410M
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
VDS = 25V
G
+
10%
VGS
S
5v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
5V
0.5 xRATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 12/29/2003
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