SSM9926GEO
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
G2
S2
D2
Capable of 2.5V gate drive
Low drive current
S2
TSSOP-8
S1
G1
S1
D1
BV DSS
20V
R DS(ON)
28mΩ
ID
4.6A
Surface-mount package
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
D2
G2
S1
S2
RoHS compliant.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=70°C
Rating
Units
20
V
± 12
V
3
4.6
A
3
3.7
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
20
A
PD @ TA=25°C
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-amb
Rev.2.10 1/29/2005
Parameter
Thermal Resistance Junction-ambient
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Max.
Value
Unit
125
°C/W
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SSM9926GEO
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
V/°C
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.1
-
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=4A
-
-
28
mΩ
VGS=2.5V, ID=2A
-
-
40
mΩ
0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VDS=10V, ID=4.6A
-
9.7
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 10 V
-
-
± 10
uA
ID=4.6A
-
12.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
6.5
-
nC
VDS=10V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=5V
-
26.2
-
ns
tf
Fall Time
RD=10Ω
-
6.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
355
-
pF
Coss
Output Capacitance
VDS=20V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
-
-
1.25
A
-
-
20
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V,VS=1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25°C,IS=1.25A,VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Rev.2.10 1/29/2005
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SSM9926GEO
25
24
4.5V
4.0V
3.5V
3.0V
T C =25 o C
20
4.5V
4.0V
3.5V
3.0V
T C =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
18
2.5V
15
10
2.5V
12
V GS =2.0V
V GS =2.0V
6
5
0
0
0
0.5
1
1.5
2
0
2.5
0.5
1
1.5
2
2.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
I D = 4A
T C =25 o C
I D = 4A
V GS =4.5V
1.6
Normalized R DS(ON)
RDS(ON) (mΩ )
40
35
30
1.4
1.2
1.0
25
0.8
0.6
20
1
2
3
4
5
6
-50
0
Fig 3. On-Resistance v.s. Gate Voltage
Rev.2.10 1/29/2005
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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6
1.2
5
1
4
0.8
PD (W)
ID , Drain Current (A)
SSM9926GEO
3
0.6
2
0.4
1
0.2
0
0
25
50
75
100
125
T c , Case Temperature (
o
150
0
50
100
T c , Case Temperature (
C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
150
o
C)
Fig 6. Typical Power Dissipation
100
1
Normalized Thermal Response (R thja)
Duty Factor=0.5
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
o
0.2
0.1
0.1
PDM
0.05
t
T
0.02
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Single Pulse
T C =25 C
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.10 1/29/2005
0.01
Fig 8. Effective Transient Thermal Impedance
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SSM9926GEO
f=1.0MHz
1000
12
I D =4.6A
VGS , Gate to Source Voltage (V)
10
Ciss
V DS =10V
V DS =15V
V DS =20V
Coss
C (pF)
8
6
100
Crss
4
2
10
0
0
5
10
15
20
1
25
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.6
100
1.4
10
1.2
T j =25 o C
VGS(th) (V)
IS (A)
T j =150 o C
1
1
0.8
0.6
0.1
0.4
0.2
0.01
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Rev.2.10 1/29/2005
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM9926GEO
VDS
RD
90%
VDS
D
RG
G
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
10%
VGS
S
+
VGS
5v
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
5V
G
RATED VDS
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.10 1/29/2005
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