VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5×103 1.4 0.52 1100 V A A V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters • Industry standard press-pack ceramic housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetetive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate VRRM f = 50 Hz, tp = 10ms, Tj = 125°C 2500 V VDClink Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) 1100 V 1500 V max Unit VDClink Characteristic values Parameter Symbol Conditions Repetitive peak reverse current IRRM min typ VR = VRRM, Tj = 125°C 50 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 10 11 max Unit 12 kN Device unclamped 50 m/s 2 Device clamped 200 m/s 2 Characteristic values Parameter Symbol Conditions min typ Weight m 0.25 kg Housing thickness H 26 mm Pole-piece diameter DP 34 mm Surface creepage distance DS 30 Air strike distance Da 20 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit mm mm 5SDF 05D2501 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IFAVM min typ Half sine wave, TC = 85 °C Max. RMS on-state current IFRMS Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t tp = 10 ms, Tj = 125°C, max Unit 490 A 770 A 3 A 3 A2s 3 A 370×10 3 A2s max Unit 8.5×10 VR ≈ 0 V 360×10 tp = 1 ms, Tj = 125°C, VR ≈ 0 V 27×10 Characteristic values Parameter Symbol Conditions min typ On-state voltage VF IF = 1000 A, Tj = 125°C 1.9 V Threshold voltage V(T0) 1.4 V Slope resistance rT Tj = 125°C IT = 600...4000 A 0.52 mΩ max Unit 17 V max Unit Turn-on Characteristic values Parameter Symbol Conditions Peak forward recovery voltage Vfr min typ di/dt = 500 A/µs, Tj = 125°C Turn-off Characteristic values Parameter Symbol Conditions min typ Reverse recovery current IRM; di/dt = 250 A/µs, Tj = 125 °C, 400 A Reverse recovery charge Qrr IF = 1000 A, VRM = 2500 V, 1150 µC Turn-off energy Err RS = 5 Ω, CS = 0.10 µF -- J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1112-03 Jan. 03 page 2 of 5 5SDF 05D2501 Thermal Maximum rated values 1) Parameter Symbol Conditions min Operating junction temperature range Tvj max Unit -40 125 °C -40 125 °C max Unit Double-side cooled 40 K/kW Rth(j-c)A Anode-side cooled 80 K/kW Rth(j-c)C Cathode-side cooled 80 K/kW Double-side cooled 8 K/kW Single-side cooled 16 K/kW Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 20.950 10.570 7.150 1.330 τi(s) 0.3960 0.0720 0.0090 0.0044 Fig. 1 Transient thermal impedance junction-tocase. 40 5000 400 2 òi dt 25°C 125°C 4000 IF (A) 30 typ 300 IFSM (kA) max 3 (10 A2s) 3000 IFSM 20 200 2000 10 100 1000 Linearization with VF0 = 1.40 V and rF = 0.52 mΩ 0 0 1 3 2 4 VF (V) Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. 0 0.1 1 10 tp (ms) 0 100 Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1112-03 Jan. 03 page 3 of 5 5SDF 05D2501 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). IRM Fig. 6 Typical current and voltage waveforms at turnoff with conventional RC snubber circuit. Fig. 7 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1112-03 Jan. 03 page 4 of 5 5SDF 05D2501 Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1112-03 Jan. 03