ANPEC APM2317AC-TR

APM2317A
P-Channel Enhancement Mode MOSFET
Pin Description
Features
•
-20V/-4.5A ,
RDS(ON)=28mΩ (typ.) @ VGS=-4.5V
RDS(ON)=38mΩ (typ.) @ VGS=-2.5V
RDS(ON)=55mΩ (typ.) @ VGS=-1.8V
•
•
•
Super High Dense Cell Design
Top View of SOT-23
Reliable and Rugged
Lead Free Available (RoHS Compliant)
S
Applications
•
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D
P-Channel MOSFET
Ordering and Marking Information
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2317
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2317A :
M17X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
1
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APM2317A
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
ID*
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
Unit
V
-4.5
VGS=-4.5V
A
-18
A
-1
150
°C
-55 to 150
TA=25°C
0.83
TA=100°C
0.3
Thermal Resistance-Junction to Ambient
W
°C/W
150
Note:
*Surface Mounted on 1in2 pad area, t
≤ 10sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VSD
a
Gate Leakage Current
VGS=±12V, VDS=0V
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
Max.
-20
-1
-30
-0.5
-0.7
µA
-1
V
±100
nA
VGS=-4.5V, IDS=-4.5A
28
35
VGS=-2.5V, IDS=-2.5A
38
50
VGS=-1.8V, IDS=-2A
55
75
-0.7
-1.3
14
20
ISD=-1A, VGS=0V
Unit
V
TJ=85°C
VDS=VGS, IDS=-250µA
Diode Forward Voltage
Min.
VDS=-16V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state
Resistance
APM2317A
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
VDS=-10V, VGS=-4.5V,
IDS=-4.5A
2.1
nC
4.7
2
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APM2317A
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2317A
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
trr
Reverse Recovery Time
qrr
Reverse Recovery Charge
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
ISD=-4.5A, dlSD/dt =100A/µs
Ω
7
1520
pF
225
165
6
12
13
24
86
156
42
77
ns
21
ns
9
nC
Notes:
a : Pulse test ; pulse width≤300 µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
3
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APM2317A
Typical Characteristics
Drain Current
Power Dissipation
5.0
0.9
4.5
0.8
4.0
-ID - Drain Current (A)
1.0
Ptot - Power (W)
0.7
0.6
0.5
0.4
0.3
3.5
3.0
2.5
2.0
1.5
1.0
0.2
0.5
0.1
o
TA=25 C,VG=-4.5V
o
0.0
TA=25 C
0
20
40
0.0
60
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
50
10
0
300µs
1ms
1
10ms
100ms
0.1
1s
DC
o
T =25 C
0.01 A
0.01
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4 1E-3 0.01
Mounted on 1in pad
o
RθJA : 150 C/W
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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APM2317A
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
100
18
VGS= -3, -4, -5, -6, -7, -8, -9, -10V
-2V
14
-ID - Drain Current (A)
90
RDS(ON) - On - Resistance (mΩ)
16
12
10
8
6
-1.5V
4
2
80
VGS=1.8V
70
60
50
VGS=2.5V
40
VGS=4.5V
30
20
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
18
1.8
IDS = -250µA
ID= -4.5A
1.6
Normalized Threshold Voltage
70
RDS(ON) - On - Resistance (mΩ)
15
-VDS - Drain - Source Voltage (V)
80
60
50
40
30
20
10
0
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
6
7
8
9
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2317A
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
1.8
VGS = -4.5V
IDS = -4.5A
10
o
Tj=150 C
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=25 C
1
0.6
o
[email protected]=25 C: 28mΩ
0.4
-50 -25
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
2100
5.0
Frequency=1MHz
VDS= -10V
4.5
ID = -4.5A
-VGS - Gate-source Voltage (V)
C - Capacitance (pF)
1800
Ciss
1500
1200
900
600
300
Coss
0
4
8
12
16
3.0
2.5
2.0
1.5
1.0
0.0
20
0
2
4
6
8
10
12
14
16
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
3.5
0.5
Crss
0
4.0
6
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APM2317A
Packaging Information
SOT-23
D
B
3
E
H
2
1
e
A
L
A1
Dim
A
A1
B
C
D
E
e
H
L
C
Millimeters
Min.
1.00
0.00
0.35
0.10
2.70
1.40
Inches
Max.
1.30
0.10
0.51
0.25
3.10
1.80
Min.
0.039
0.000
0.014
0.004
0.106
0.055
Max.
0.051
0.004
0.020
0.010
0.122
0.071
0.075/0.083 BSC.
0.094
0.118
0.015
1.90/2.1 BSC.
2.40
0.37
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
3.00
7
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APM2317A
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
8
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APM2317A
Classification Reflow Profiles (Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volume mm
Volume mm
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volum e m m
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
D1
9
Ko
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APM2317A
Carrier Tape & Reel Dimensions
T2
J
C
A
B
T1
Application
SOT-23
A
B
C
J
178±1
60 ± 1.0
12.0
F
D
D1
Po
3.5 ± 0.05
1.5 +0.1
φ0.1MIN
4.0
T1
P
E
1.4
W
8.0+ 0.3
- 0.3
4.0
1.75
P1
Ao
Bo
Ko
t
2.0 ± 0.05
3.1
3.0
1.3
0.2±0.03
2.5 ± 0.15 9.0 ± 0.5
T2
(mm)
Cover Tape Dimensions
Application
SOT- 23
Carrier Width
8
Cover Tape Width
5.3
Devices Per Reel
3000
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2006
10
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