ANPEC APM9968COC-TU

APM9968CO
Dual N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V
RDS(ON)=20mΩ(typ.) @ VGS=2.5V
•
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
•
Reliable and Rugged
TSSOP-8 Packages
Top View of TSSOP − 8
Lead Free Available (RoHS Compliant)
(1)
D
(8)
D
Applications
•
Power Management in Notebook Computer,
(4)
G1
Portable Equipment and Battery Powered
Systems
•
(5)
G2
Zener Diode Protected Gate Provide Human
Body Mode Electrostatic Discharge Protection
to 2500 V
S1
(2)
S1
(3)
S2 S2
(6) (7)
N-Channel MOSFET
Ordering and Marking Information
Package Code
O : TSSO P-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : O riginal Device
APM 9968C
Lead Free Code
Handling Code
Tem p. Range
Package Code
APM 9968C O :
APM 9968C
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
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APM9968CO
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±8
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
6
ID*
TSTG
Unit
VGS=4.5V
A
20
A
1
150
°C
-55 to 150
TA=25°C
1.25
TA=100°C
0.5
Thermal Resistance-Junction to Ambient
W
°C/W
100
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
Max.
20
VGS=±8V, VDS=0V
30
0.5
Unit
V
TJ=85°C
Gate Leakage Current
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
1
VDS=VGS, IDS=250µA
Diode Forward Voltage
Min.
VDS=16V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM9968CO
0.7
µA
1
V
±10
µA
VGS=4.5V, IDS=6A
16
20
VGS=2.5V, IDS=5.2A
20
25
ISD=0.5A, VGS=0V
0.7
1.3
19
25
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
VDS=10V, VGS=4.5V,
IDS=6A
2
nC
5
2
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APM9968CO
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM9968CO
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Notes:
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Turn-off Fall Time
Ω
2.5
1250
pF
340
260
37
68
33
62
100
182
54
100
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
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APM9968CO
Typical Characteristics
Drain Current
Power Dissipation
8
1.5
1.2
ID - Drain Current (A)
Ptot - Power (W)
6
0.9
0.6
4
2
0.3
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
it
im
300µs
s(
on
)L
10
Rd
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
1ms
10ms
1
100ms
0.1
1s
DC
o
TA=25 C
0.01
0.01
TA=25 C,VG=4.5V
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
Mounted on 1in pad
o
RθJA : 100 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM9968CO
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
26
VGS= 1.8, 2, 3, 4, 5, 6, 7, 8, 9, 10V
RDS(ON) - On - Resistance (mΩ)
24
ID - Drain Current (A)
16
12
1.5V
8
4
22
VGS=2.5V
20
18
VGS=4.5V
16
14
1V
0
0
1
2
3
4
5
6
7
12
8
0
2
4
6
8
10 12 14 16 18 20
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.6
Normalized Threshold Voltage
IDS =250µA
ID - Drain Current (A)
16
12
o
Tj=125 C
8
o
Tj=-55 C
o
Tj=25 C
4
0
0.0
0.3
0.6
0.9
1.2 1.5
1.8 2.1
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
2.4
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1.4
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM9968CO
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
20
VGS= 4.5V
10
1.6
o
IS - Source Current (A)
Normalized On Resistance
ID = 6A
1.2
0.8
0.4
Tj=150 C
o
Tj=25 C
1
o
[email protected]=25 C: 16mΩ
0.0
-50 -25
0
25
50
75
0.1
100 125 150
0.0
0.4
0.8
1.2
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.6
5
2500
Frequency=1MHz
VDS=10V
VGS - Gate - source Voltage (V)
IDS= 6A
C - Capacitance (pF)
2000
1500
Ciss
1000
Crss
500
0
Coss
4
3
2
1
0
0
4
8
12
16
20
4
8
12
16
20
24
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
0
6
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APM9968CO
Packaging Information
TSSOP-8
e
8 7
2x E/2
E1
( 2)
E
GAUGE
PLANE
S
1
2
e/2
0.25
D
L
A2
A
b
Dim
A
A1
A2
b
D
e
E
E1
L
L1
R
R1
S
φ1
φ2
φ3
1
(L1)
( 3)
A1
Millimeters
Min.
Inches
Max.
1.2
0.15
1.05
0.30
3.1
0.00
0.80
0.19
2.9
Min.
0.000
0.031
0.007
0.114
0.65 BSC
6.40 BSC
4.30
0.45
0.026 BSC
0.252 BSC
4.50
0.75
0.169
0.018
8°
0.004
0.004
0.008
0°
1.0 REF
0.09
0.09
0.2
0°
0.177
0.030
0.039REF
12° REF
12° REF
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
Max.
0.047
0.006
0.041
0.012
0.122
8°
12° REF
12° REF
7
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APM9968CO
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
8
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APM9968CO
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
D1
9
Ko
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APM9968CO
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TSSOP-8
A
B
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
330 ± 1
2 + 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 ± 0. 1
1.5 + 0.1
1.5 + 0.1
4.0 ± 0.1
2.0 ± 0.1
7.0 ± 0.1
3.6 ± 0.3
1.6 ± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
TSSOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
10
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