ANPEC APM4220KAC-TU

APM4220KA
N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
•
•
•
•
•
25V/16A,
RDS(ON)=7.5mΩ(typ.) @ VGS=10V
RDS(ON)=10mΩ(typ.) @ VGS=4.5V
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Thermal Pad Exposed with Standard SOP-8
Outline
Lead Free Available (RoHS Compliant)
SOP − 8 Exposed
= Thermal Pad
(connected to Drain plane for better heat
dissipation)
( 5,6,7,8 )
D D DD
Applications
•
Power Management in Notebook Computer,
(4)
G
Portable Equipment and Battery Powered
Systems
S S S
(1, 2, 3)
N-Channel MOSFET
Ordering and Marking Information
Package Code
KA : SOP-8-P
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : O riginal Device
APM 4220
Lead Free Code
Handling Code
Tem p. Range
Package Code
APM 4220 KA :
•
•
APM 4220
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
1
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APM4220KA
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TJ
TSTG
Storage Temperature Range
V
Mounted on Large Heat Sink
PD
Maximum Power Dissipation
TC=25°C
50
TC=100°C
20
RθJC
Thermal Resistance-Junction to Case
j
Mounted on PCB of 1in2 Pad Area
IDP
Continuous Drain Current
PD
Maximum Power Dissipation
TA=25°C
50
TA=100°C
25
TA=25°C
16
TA=100°C
8
TA=25°C
3
TA=100°C
1.2
Thermal Resistance-Junction to Ambient
k
Mounted on PCB of Minimum Footprint
TA=25°C
50
TA=100°C
25
TA=25°C
13
TA=100°C
6
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Minimum Footprint
50
300ìs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
RθJA
Maximum Power Dissipation
A
A
W
40
RθJA
IDP
°C/W
2.5
300ìs Pulse Drain Current Tested
ID
W
°C/W
A
A
W
°C/W
Notes:
j.The value of RθJA is when the device mounted on
k. The value of RθJA is when the device mounted on
minimum pad with 2oz. Copper, t ≤ 10s.
1in2 pad with 2oz. Copper, t ≤ 10s.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
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APM4220KA
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
ID=15A, VDD=15V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
APM4220KA
Min.
Typ.
50
25
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
IGSS
RDS(ON)
VSD
a
a
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
Diode Forward Voltage
Gate Charge Characteristics
Qg
Total Gate Charge
mJ
1
30
TA=25°C
VGS(th)
Unit
V
VDS=20V, VGS=0V
IDSS
Max.
1.3
1.8
µA
2.5
V
±100
nA
VGS=10V, IDS=16A
7.5
9
VGS=4.5V, IDS=14A
10
12
ISD=3A, VGS=0V
0.8
1.3
20
26
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=12A
nC
4.8
8.4
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Tf
Turn-off Delay Time
VGS=0V, VDS=0V, f=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Ω
2
1785
500
pF
300
10
19
7
13
69
95
32
46
ns
Notes:
a: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b: Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
3
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APM4220KA
Typical Characteristics
Power Dissipation
Drain Current
3.5
18
15
2.5
ID - Drain Current (A)
Ptot - Power (W)
3.0
2.0
1.5
1.0
20
40
60
0
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
it
im
on
)L
Rd
s(
ID - Drain Current (A)
6
0
80 100 120 140 160
Normalized Transient Thermal Resistance
0
100
10
9
3
0.5
0.0
12
300µs
1ms
1
10ms
100ms
1s
DC
0.1
O
T =25 C
0.01 A
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
2
Mounted on 1in pad
o
RθJA : 40 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4220KA
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
18
50
VGS=4,5,6,7,8,9,10V
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
40
16
3V
30
20
2.5V
10
0
0
2
4
6
8
14
12
VGS=10V
8
6
4
2
0
10
VGS=4.5V
10
0
10
20
30
40
50
ID - Drain Current (A)
VDS - Drain - Source Voltage (V)
Transfer Characteristics
Gate Threshold Voltage
50
1.6
IDS =250µA
Normalized Threshold Voltage
1.4
ID - Drain Current (A)
40
30
o
Tj=125 C
20
o
Tj=25 C
10
0
0
1
2
o
Tj=-55 C
3
4
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
5
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
1.2
5
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APM4220KA
Typical Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
50
2.00
VGS = 10V
IDS = 12A
1.50
o
10
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
Tj=150 C
o
Tj=25 C
1
0.25
o
[email protected]=25 C: 7.5mΩ
0.00
-50 -25
0
25
50
75
0.1
0.0
100 125 150
0.2 0.4
Capacitance
1.0
1.2 1.4
1.6
Gate Charge
3000
10
Frequency=1MHz
VDS=10V
9 I = 12A
D
VGS - Gate-source Voltage (V)
2500
C - Capacitance (pF)
0.8
VSD - Source - Drain Voltage (V)
Tj - Junction Temperature (°C)
2000
Ciss
1500
1000
Coss
500
Crss
0
0.6
0
5
10
15
20
7
6
5
4
3
2
1
0
25
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
8
0
5
10
15
20
25
30
35
40
QG - Gate Charge (nC)
6
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APM4220KA
Avalanche Test Circuit and Waveforms
V DS
tp
L
V D SX(SU S)
V DS
DUT
IA S
RG
V DD
V DD
EA S
IL
tp
0.0 1 Ω
tAV
Switching Time Test Circuit and Waveforms
V DS
RD
V DS
DUT
V
90%
GS
RG
V DD
10%
V GS
tp
t d (on) t r
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
7
t d (off) t f
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APM4220KA
Packaging Information
E
E1
0.015X 45
SOP-8-P pin ( Reference JEDEC Registration MS-012)
H
D1
e1
e2
D
A1
A
L
0.004m ax.
Dim
1
M illimet ers
Inches
M in.
M ax.
M in.
M ax.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
5.00
0.189
0.197
D1*
4.80
3.34
3.84
0.132
0.151
E
3.80
4.00
0.150
0.157
E1*
2.23
2.68
0.088
0.106
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
φ 1
8°
8°
* Thermal pad dimension
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
8
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APM4220KA
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
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APM4220KA
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
D1
10
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APM4220KA
Carrier Tape(Cont.)
T2
J
C
A
B
T1
Application
SOP- 8-P
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
2.1± 0.1
.3±0.013
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
(mm)
Cover Tape Dimensions
Application
SOP- 8-P
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
11
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