ANPEC APM4230KC-TU

APM4230K
N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
•
•
•
•
•
D
25V/13.5A,
RDS(ON)=6mΩ(typ.) @ VGS=10V
RDS(ON)=7.5mΩ(typ.) @ VGS=4.5V
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
SOP-8 Package
Lead Free Available (RoHS Compliant)
D
D
D
S
S
S
G
Top View of SOP − 8
( 5,6,7,8 )
D D DD
Applications
•
(4)
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S S S
(1, 2, 3)
N-Channel MOSFET
Ordering and Marking Information
Package Code
K : SO P-8
O perating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Dev ice Blank : Original Dev ice
APM 4230
Lead Free Code
Handling Code
Tem p. Range
Package Code
APM 4230 K :
APM 4230
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
1
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APM4230K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
ID*
Continuous Drain Current
IDM*
IS*
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
Unit
V
13.5
VGS=10V
A
55
A
3
150
°C
-55 to 150
TA=25°C
TA=100°C
Thermal Resistance-Junction to Ambient
2
0.8
W
62.5
°C/W
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
ID=20A, VDD=15V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
Max.
25
1
VGS=±20V, VDS=0V
30
1.3
Unit
mJ
V
TJ=85°C
Gate Leakage Current
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
VDS=20V, VGS=0V
VDS=VGS, IDS=250µA
Diode Forward Voltage
Min.
45
Gate Threshold Voltage
Drain-Source On-state Resistance
APM4230K
1.8
µA
2.5
V
±100
nA
VGS=10V, IDS=13.5A
6
7.5
VGS=4.5V, IDS=10A
7.5
10
VGS=4.5V, IDS=10A,
TJ=125°C
9.5
13
ISD=1A, VGS=0V
0.7
1.3
29
40
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
VDS=10V, VGS=4.5V,
IDS=16A
3.6
nC
12
2
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APM4230K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM4230K
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Ω
2.3
3300
pF
1180
790
15
28
13
24
122
170
53
75
ns
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
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APM4230K
Typical Characteristics
Drain Current
2.5
15
2.0
12
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
0.5
9
6
3
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistacne
it
on
)L
im
300µs
s(
1ms
Rd
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=10V
10ms
1
100ms
1s
0.1
DC
o
T =25 C
0.01 A
0.01
0.1
1
10
100
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
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4
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APM4230K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
14
60
VGS= 4,5,6,7,8,9,10V
3V
12
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
50
40
30
20
2.5V
10
10
VGS=4.5V
8
VGS=10V
6
4
2
2V
0
0
2
4
6
8
0
10
20
30
40
50
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
Normalized Threshold Voltage
1.6
50
ID - Drain Current (A)
10
VDS - Drain-Source Voltage (V)
60
40
30
o
Tj=125 C
20
o
Tj=25 C
o
Tj=-55 C
10
0
0
60
IDS =250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
3
0.0
-50 -25
4
25
50
75
100 125 150
Tj - Junction Temperature (°C)
VGS - Gate-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
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5
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APM4230K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
60
1.8
VGS = 10V
IDS = 16A
1.4
o
Tj=150 C
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
0.4
o
10
Tj=25 C
0.2
o
[email protected]=25 C: 6mΩ
0.0
-50 -25
0
25
50
75
1
0.0
100 125 150
0.6
0.8
1.0
1.2
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
1.4
10
Frequency=1MHz
VDS=10V
ID = 16A
VGS - Gate-source Voltage (V)
5000
C - Capacitance (pF)
0.4
Tj - Junction Temperature (°C)
6000
4000
Ciss
3000
2000
Coss
1000
0
0.2
Crss
8
6
4
2
0
0
5
10
15
20
25
10
20
30
40
50
60
70
QG - Gate Charge (nC)
VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
0
6
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APM4230K
Avalanche Test Circuit and Waveforms
V DS
tp
L
V D SX(SU S)
V DS
DUT
IA S
RG
V DD
V DD
EA S
IL
tp
0.0 1 Ω
tAV
Switching Time Test Circuit and Waveforms
V DS
RD
V DS
DUT
V
90%
GS
RG
V DD
10%
V GS
tp
t d (on) t r
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
7
t d (off) t f
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APM4230K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
1. 27B S C
0. 50B S C
8°
8°
φ 1
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
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APM4230K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
9
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APM4230K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
D1
10
Ko
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APM4230K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
SOP-8
A
330±1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
T1
12.4 +0.2
F
D
D1
Po
P1
5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1
T2
2± 0.2
W
12 + 0.3
- 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
11
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