NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V • 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG270034 Order Number Package NESG270034-AZ Quantity 3-pin power minimold (34 PKG) (Pb-Free) Note1, 25 pcs Supplying Form • Magazine case (Non reel) 2 NESG270034-T1 NESG270034-T1-AZ 1 kpcs/reel • 12 mm wide embossed taping • Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 750 mA 1.9 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10577EJ01V0DS (1st edition) Date Published September 2005 CP(K) © NEC Compound Semiconductor Devices, Ltd. 2005 NESG270034 THERMAL RESISTANCE (TA = +25°C) Parameter Termal Resistance from Junction to Ambient Symbol Ratings Unit Rthj-a 65 °C/W Note 2 Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE − 6.0 7.2 V IC − 600 750 mA Pin − 20 23 dBm Note Input power under conditions of VCE ≤ 6.0 V, f = 460 MHz 2 Preliminary Data Sheet PU10577EJ01V0DS NESG270034 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 9.2 V, IE = 0 mA − − 1 µA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA − − 1 µA VCE = 3 V, IC = 100 mA 80 120 180 − 17.5 19.5 − dB − 15 − dB 31.5 33.5 − dBm − 31.5 − dBm − 60 − % − 50 − % DC Current Gain hFE Note RF Characteristics Linner Gain (1) GL VCE = 6 V, IC (set) = 30 mA (RF OFF), GL VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm Linner Gain (2) f = 900 MHz, Pin = 0 dBm Output Power (1) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 20 dBm Output Power (2) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm ηC Collector Efficiency (1) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 20 dBm ηC Collector Efficiency (2) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 25 dBm Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSIFICATION Rank FB Marking SQ hFE Value 80 to 180 Preliminary Data Sheet PU10577EJ01V0DS 3 NESG270034 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 2.0 Mounted on glass epoxy PWB (34.2 cm2 × 0.8 mm (t) ) 1.6 1.2 0.8 Nature Neglect 0.4 0 25 50 75 100 125 150 175 Ambient Temperature TA (˚C) Remark The graph indicates nominal characteristics. 4 Preliminary Data Sheet PU10577EJ01V0DS NESG270034 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS OUTPUT POWER, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 35 1 000 30 800 Pout 25 600 20 400 IC 15 200 Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm) VCE = 6 V, f = 460 MHz IC (set) = 30 mA ηC 10 0 5 10 15 20 0 25 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. Preliminary Data Sheet PU10577EJ01V0DS 5 NESG270034 EVALUATION CIRCUIT (f = 460 MHz) VCE VBE R1 C5 C4 R2 L2 C3 L4 L1 RF OUT RF IN C2 C1 L3 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. EVALUATION BOARD (f = 460 MHz) VCE GND GND VBE R1 L2 C5 C4 R2 L1 L3 SQ L4 C2 C3 C1 34-04 Notes 1. 38 × 38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. 6 : Through holes Preliminary Data Sheet PU10577EJ01V0DS NESG270034 COMPONENT LIST Component Maker Value Size (TYPE) Purpose C1 Murata 11 pF 1005 Input DC Block/Input RF Matching C2 Murata 9.5 pF 1005 Input RF Matching C3 Murata 39 pF 1005 Input DC Block/Output RF Matching C4 Murata 10 000 pF 1005 RF GND C5 Murata 10 000 pF 1005 RF GND L1 Toko 390 nH 2012 RF Block/Input RF Matching L2 Toko 47 nH 1608 RF Block/Output RF Matching L3 Toko 5.6 nH 2012 Input RF Matching L4 Toko 5.1 nH 1608 Output RF Matching R1 SSM 15 Ω 1005 Improve Stability R2 SSM 10 Ω 1005 Improve Stability Preliminary Data Sheet PU10577EJ01V0DS 7 NESG270034 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 4.5±0.1 1.5±0.1 0.8 MIN. 2 1 3 0.42±0.06 4.0±0.25 2.5±0.1 1.6±0.2 0.42±0.06 0.47±0.06 1.5 3.0 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 8 Preliminary Data Sheet PU10577EJ01V0DS 0.41+0.03 –0.06 NESG270034 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of September, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. 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M8E 00. 4 - 0110 Preliminary Data Sheet PU10577EJ01V0DS 9 NESG270034 For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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