NEC UPA1981

DATA SHEET
INTEGRATED LOAD SWITCH
µ PA1981
N-CHANNEL/P-CHANNEL MOS FET PAIR
FOR LOAD SWITCH
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
0.32 +0.1
–0.05
+0.1
0.65 –0.15
2.8 ±0.2
This load switch integrated a small N-Channel MOS FET (Q1), which
drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).
0 to 0.1
FEATURES
0.95
• VS2D21 = 0.2 V MAX. (VS2S1 = 5.0 V, ID2 = −2.8 A, RD2S2(on)1 = 70 mΩ)
0.65
0.95
1.9
• VS2D22 = 0.2 V MAX. (VS2S1 = 2.5 V, ID2 = −1.9 A, RD2S2(on)2 = 105 mΩ)
0.4
power management in portable electronic equipment where 2.5 to 8 V
input and 2.8 A output current capability are needed.
0.16 +0.1
–0.06
1.5
The µ PA1981 is a N-Channel/P-Channel MOS FET pair for compact
0.9 to 1.1
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1981TE
SC-95 (Mini Mold Thin Type)
Marking: TZ
PIN CONNECTION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Source2 to Source1 Input Voltage Range
VS2S1
2.5 to 8.0
V
Gate1 to Source1 On Voltage Range
VG1S1
1.5 to 7.0
V
Drain2 Current (DC)
Note1
Drain2 Current (pulse)
Note2
Total Power Dissipation
Note1
6
5
4
ID2(DC)
−2.8
A
−10.0
1. S1(Q1)
4. S2(Q2)
ID2(pulse)
A
2. D2(Q2)
5. G1(Q1)
PT
1.0
W
3. D2(Q2)
6. G2/D1
150
°C
Channel Temperature
Tch
Storage Temperature
Tstg
−55 to +150
2
Notes 1. Mounted on FR-4 Board of 2500 mm x 1.6 mm, t ≤ 5 sec
°C
1
2
3
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17263EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
µ PA1981
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
OFF CHARACTERISTICS
Q2-S2 to D2 Leakage Current
IS2D2
VS2D2 = 8.0 V, VG1S1 = 0 V
1.0
µA
Q1-D1 to S1 Leakage Current
ID1S1
VD1S1 = 8.0 V, VG1S1 = 0 V
1.0
µA
ON CHARACTERISTICS
Q2-S2 to D2 Voltage
Note
Q2-Static On-Resistance
Q2-S2 to D2 Current
Note
VS2D21
VS2S1 = 5.0 V, VG1S1 = 3.3 V, ID2 = −2.8 A
0.15
0.2
V
VS2D22
VS2S1 = 2.5 V, VG1S1 = 3.3 V, ID2 = −1.9 A
0.15
0.2
V
RD2S2(on)1
VG2S2 = −5.0 V, ID2 = −2.8A
52
70
mΩ
RD2S2(on)2
VG2S2 = −2.5 V, ID2 = −1.9 A
76
105
mΩ
Note
IS2D21
VS2D2 = 0.2 V, VS2S1 = 5.0 V, VG1S1 = 3.3 V
2.8
A
IS2D22
VS2D2 = 0.2 V, VS2S1 = 2.5 V, VG1S1 = 3.3 V
1.9
A
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
CIRCUIT1 EXAMPLE OF APPLICATION CIRCUIT
µ PA1981
Q2
S2
D2
+Vin
R1
G2/D1
Ci
G1
Q1
Co
LOAD
VON/OFF
S1
GND
RECOMMENDATION OF CIRCUIT1
Co ≤ 1 µF for applications
R1 is required to turn Q2 off.
Select R1 in the range of 10 to 470 kΩ.
2
Data Sheet G17263EJ1V0DS
µ PA1981
TYPICAL CHARACTERISTICS (TA = 25°C)
ON-STATE VOLTAGE (Pch) vs.
DRAIN2 CURRENT
ON-STATE VOLTAGE (Pch) vs.
CHANNEL TEMPERATURE
0.20
0.16
VS2D2 - On-state Voltage (Pch) - V
VS2D2 - On-state Voltage (Pch) - V
0.20
Tch = 125°C
0.12
25°C
0.08
Pulsed
VS2S1 = 5.0 V
VG1S1 = 1.5 to 7.0 V
0.04
Tch = 125°C
0.16
25°C
0.12
0.08
Pulsed
VS2S1 = 2.5 V
VG1S1 = 1.5 to 7.0 V
0.04
0
0
0
-0.5
-1
-1.5
-2
-2.5
0
-3
ID2 - Drain2 (Pch) Current - A
-1
-1.5
-2
-2.5
-3
ID2 - Drain2 (Pch) Current - A
ON-STATE RESISTANCE (Pch) vs.
INPUT VOLTAGE
ON-STATE RESISTANCE (Pch) vs.
CHANNEL TEMPERATURE
14
12
10
RD2S2(on) - Static On-Resistance - mΩ
Pulsed
ID2 = −2.8 A
VG1S1 = 1.5 to 7.0 V
8
6
4
2
Pulsed
VG1S1 = 1.5 to 7.0 V
12
VS2S1 = 2.5 V
ID2 = −1.9 A
10
8
6
VS2S1 = 5.0 V
ID2 = −2.8 A
4
2
0
0
1
2
3
4
5
6
7
8
-50
VS2S1 - Source2 to Source Input Voltage - V
-25
0
25
50
75
100 125 150
Tch - Channel Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth- Transient Thermal Resistance - °C/W
RD2S2(on) - Static On-Resistance - mΩ
-0.5
100
10
1
Single pulse
Mounted on FR-4 board of 2500 mm2 x 1.6 mm
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G17263EJ1V0DS
3
µ PA1981
• The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1