ACE4826B Dual N-Channel Enhancement Mode MOSFET Description This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch, power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Features VDS 60V, VGS 20V, ID 5.5A RDS(ON)@10V, 30mΩ (typ.) RDS(ON)@4.5V, 35mΩ (typ.) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current - Continuous ID 5.5 A Total Power Dissipation (Note1,2) PD 1 Operating and Storage Junction Temperature Range TJ/TSTG -55/150 W O C Note: 1. Surface Mounted on 1in pad area, t ≤10sec. 2. Rating for a single chip. Packaging Type SOP-8 VER 1.2 1 ACE4826B Dual N-Channel Enhancement Mode MOSFET Ordering information ACE4826B XX + H Halogen - free Pb - free FM : SOP-8 Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V, ID=250 uA 60 V IGSS VDS=0V,VGS=±20V ±100 uA IDSS VDS=60V, VGS=0V 1 uA 1.4 3 V VGS=10V, ID=5.5A 30 41 VGS=4.5V, ID=4.5A 35 52 0.77 1 On characteristics Gate Threshold Voltage VGS(th) Drain-Source On-Resistance RDS(ON) VDS=VGS, IDS=250uA 1 mΩ Drain-Source Diode Characteristics And Maximum Ratings Diode Forward Voltage VSD IS=2A, VGS=0V 0.5 V Switching characteristics Turn-On Time Turn-Off Time td(on) tr td(off) 15 VGS=10V, RL=5.4Ω, VDS=30V, RGEN=3Ω, ID=5.5A 20 40 tf nS 15 Dynamic characteristics Input Capacitance Ciss Output Capacitance REVERSE Transfer Capacitance Coss Crss 1180 VGS=0V, VDS=10V, f=1MHz 170 pF 100 VER 1.2 2 ACE4826B Dual N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 3 ACE4826B Dual N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 4 ACE4826B Dual N-Channel Enhancement Mode MOSFET Packing Information SOP-8 VER 1.2 5 ACE4826B Dual N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6