SSC SSM4501GM

SSM4501GM
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
PRODUCT SUMMARY
N-CH BVDSS
D2
Simple Drive Requirement
Low On-resistance
Fast Switching
30V
RDS(ON)
D2
D1
D1
28mΩ
ID
P-CH BVDSS
G2
S2
SO-8
S1
7A
G1
DESCRIPTION
-30V
RDS(ON)
50mΩ
ID
-5.3A
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D2
D1
Pb-free; RoHS-compliant
G2
G1
S2
S1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
30
-30
V
±20
±20
V
3
7
-5.3
A
3
5.8
-4.7
A
20
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-amb
08/17/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
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Max.
Value
Unit
62.5
℃/W
1
SSM4501GM
N-CH ELECTRICAL CHARACTERISTICS
o
@Tj=25 C (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=7A
-
-
28
mΩ
VGS=4.5V, ID=5A
-
-
42
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=7A
-
13
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
ID=7A
-
8.4
-
nC
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5.2
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.8
-
ns
tf
Fall Time
RD=15Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
645
-
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
SOURCE-DRAIN DIODE
Symbol
IS
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode )
2
Forward On Voltage
08/17/2007 Rev.1.00
Min. Typ. Max. Units
VD=VG=0V , VS=1.2V
-
-
1.7
A
Tj=25℃, IS=7A, VGS=0V
-
-
1.2
V
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2
SSM4501GM
P-CH ELECTRICAL CHARACTERISTICS
o
@Tj=25 C (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
Min. Typ. Max. Units
-30
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-5.3A
-
-
50
mΩ
VGS=-4.5V, ID=-4.2A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-5.3A
-
8.5
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
Drain-Source Leakage Current (Tj=25 C)
2
±100 nA
Qg
Total Gate Charge
ID=-5.3A
-
20
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
2
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=15Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
790
-
pF
Coss
Output Capacitance
VDS=-15V
-
440
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=-1.2V
VSD
Forward On Voltage2
Tj=25℃, IS=-2.6A, VGS=0V
Min. Typ. Max. Units
-1.7 A
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2
3.Surface mounted on 1 in copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
08/17/2007 Rev.1.00
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3
SSM4501GM
N-Channel
36
36
10V
8.0V
6.0V
5.0V
V GS =4.5V
24
ID , Drain Current (A)
ID , Drain Current (A)
10V
8.0V
6.0V
5.0V
12
24
V GS =4.5V
12
T C =150 o C
T C =25 o C
0
0
0
2
3
5
0
6
2
V DS , Drain-to-Source Voltage (V)
3
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
90
I D =7.0A
V GS = 10V
I D =7.0A
T C =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ )
70
50
1.4
0.8
30
10
0.2
2
6
10
14
-50
0
Fig 3. On-Resistance v.s. Gate Voltage
08/17/2007 Rev.1.00
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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4
SSM4501GM
8
2.4
6
1.8
PD (W)
ID , Drain Current (A)
N-Channel
4
1.2
0.6
2
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T C =25 o C
Single Pulse
10s
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x R thja + Ta
o
Rthja=135 C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
08/17/2007 Rev.1.00
Fig 8. Effective Transient Thermal Impedance
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5
SSM4501GM
N-Channel
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D =7.0A
9
V DS= 1 6 V
V DS =20V
V DS =24V
1000
C (pF)
Ciss
6
Coss
Crss
100
3
0
10
0
4
8
12
16
1
7
13
19
25
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100
2.5
10
2
T C =25 o C
VGS(th) (V)
IS(A)
T C = 150 o C
1
1.5
1
0.1
0.5
0
0.01
0
0.4
0.8
1.2
-50
Fig 11. Forward Characteristic of
Reverse Diode
08/17/2007 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM4501GM
N-Channel
VDS
90%
RD
VDS
D
0.5 x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
VGS
10V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
0.8 x RATED VDS
QGS
G
S
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
08/17/2007 Rev.1.00
Q
Fig 16. Gate Charge Waveform
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7
SSM4501GM
P-Channel
20
20
10V
8.0V
6.0V
10V
8.0V
6.0V
15
-ID , Drain Current (A)
-ID , Drain Current (A)
15
V GS =4. 0 V
10
V GS =4. 0 V
10
5
5
T C =150 o C
T C =25 o C
0
0
0
1
2
3
0
4
1
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
90
1.8
I D =-5.3A
T C =25 ℃
I D =-5.3A
80
1.6
70
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
60
50
V GS = -10V
1.2
1
0.8
40
0.6
30
3
4
5
6
7
8
9
10
11
-50
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
08/17/2007 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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SSM4501GM
P-Channel
6
2.4
5
4
PD (W)
-ID , Drain Current (A)
1.8
3
1.2
2
0.6
1
0
0
25
50
75
100
125
150
0
50
o
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
DC
o
T C =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=195 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
08/17/2007 Rev.1.00
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9
SSM4501GM
P-Channel
14
I D =-5.3A
12
10
1000
V DS =-10V
V DS =-15V
V DS =-20V
8
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
6
Coss
Crss
100
4
2
0
10
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100.00
2.5
10.00
T j =150 o C
-VGS(th) (V)
-IS(A)
2
T j =25 o C
1.5
1.00
1
0.10
0.5
0.01
0
0.1
0.4
0.7
1
1.3
-50
0
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
08/17/2007 Rev.1.00
50
100
150
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM4501GM
P-Channel
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
10%
S
-10 V
VGS
VGS
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
-10V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
08/17/2007 Rev.1.00
Q
Fig 16. Gate Charge Waveform
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SSM4501GM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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