Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 (TC=25˚C) Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 6.0±0.3 1.0±0.1 R0.5 R0.5 0 to 0.4 2.54±0.3 W 1.3 ■ Electrical Characteristics 3.4±0.3 0.8±0.1 30 PC Ta=25°C 8.5±0.2 14.7±0.5 emitter voltage 2SD1251A Unit: mm 60 VCEO +0 2SD1251 V 80 1.5–0.4 Collector to 60 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 2SD1251A 2 2.0 2SD1251 base voltage 4.4±0.5 Collector to 0.5max. +0.4 Symbol 1.1max. 3.0–0.2 Parameter 1.5max. 4.4±0.5 ■ Absolute Maximum Ratings 1.0±0.1 1.5±0.1 10.0±0.3 Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification 1.1 max. 5.08±0.5 150 ˚C –55 to +150 ˚C 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 30 µA Emitter cutoff current IEBO VEB = 8V, IC = 0 1 mA VCEO(sus)*2 IC = 0.2A, L = 25mH hFE1 VCE = 3V, IC = 0.1A 40 hFE2*1 VCE = 3V, IC = 1A 30 Collector to emitter 2SD1251 voltage 2SD1251A Forward current transfer ratio 60 V 80 160 Base to emitter voltage VBE VCE = 3V, IC = 1A 1.2 V Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.4A 1 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 0.5MHz *1h FE2 *2V CEO(sus) Rank classification Rank Q P O hFE2 30 to 60 50 to 100 80 to 160 1 MHz Test circuit 50/60Hz mercury relay X IC(A) 0.2 L 25mH 0.1 120Ω 6V Y 1Ω 15V G 60/80 VCE(V) Note: Ordering can be made by the common rank (OP rank hFE2 = 50 to 160) in the rank classification. 1 Power Transistors 2SD1251, 2SD1251A PC — Ta IC — VCE IC — VBE 2.4 40 (1) 30 20 3.2 TC=25˚C IB=35mA 2.0 10 25˚C TC=100˚C 30mA 25mA 1..6 20mA 15mA 1.2 10mA 0.8 VCE=3V 2.8 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 5mA –25˚C 2.4 2.0 1.6 1.2 0.8 0.4 (2) 0.4 (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 10 Collector output capacitance Cob (pF) 1 3000 TC=100˚C 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 25˚C –25˚C 100 30 10 3 0.1 0.3 1 3 t=5ms 3 IC 10ms 1 300ms 0.3 0.03 0.01 1 3 10 30 2SD1251A 2SD1251 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 100 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 I CP IE=0 f=1MHz TC=25˚C (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 2.4 300 1 0.1 10 Collector current IC (A) Area of safe operation (ASO) 30 2.0 1000 1 0.01 0.03 3 1.6 3000 TC=100˚C 300 1.2 Cob — VCB 1000 3 0.8 10000 VCE=3V Forward current transfer ratio hFE IC/IB=5 TC=25˚C 10 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 30 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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