CYSTEKEC BTC3906L3

CYStech Electronics Corp.
Spec. No. : C208L3
Issued Date : 2004.09.21
Revised Date :
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTC3906L3
Description
The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514L3
Symbol
Outline
BTC3906L3
SOT-223
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation@TC=25℃
Junction Temperature
Storage Temperature
BTC3906L3
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
180
160
6
600
5
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208L3
Issued Date : 2004.09.21
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
180
160
6
25
60
40
52
100
-
Typ.
0.1
-
Max.
50
50
0.15
0.2.
1
1
390
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=6V, IC=2mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 4
Rank
Range
BTC3906L3
K
52~120
P
82~180
Q
120~270
R
180~390
CYStek Product Specification
Spec. No. : C208L3
Issued Date : 2004.09.21
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
Current Gain---HFE
HFE@VCE=6V
VCE(SAT)@IC=10IB
100
10
100
0.1
1
10
0.1
100
1
10
100
Collector Current ---IC(mA)
Collector Current--- IC(mA)
Cutoff Frequency vs Collector Current
Saturation Voltage vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
FT@VCE=12V
0.1
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curves
Power Dissipation---PD(W)
6
5
4
3
2
1
0
0
50
100
150
200
Ambient Temperature ---TC(℃ )
BTC3906L3
CYStek Product Specification
Spec. No. : C208L3
Issued Date : 2004.09.21
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
B
G1
C
1
2
3
D
E
Style: Pin 1.Base 2.Collector 3.Emitter
F
H
G
a1
I
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
0o
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
0o
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC3906L3
CYStek Product Specification