e PTB 20097 40 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 915–960 MHz Class AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 60 50 40 200 97 30 LO 20 VCC = 25 V 10 ICQ = 200 mA f = 960 MHz TC OD E 0 0 2 4 6 8 10 Input Power (Watts) Package 20200 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 10 Adc Total Device Dissipation at Tflange = 25°C PD 175 Watts 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.0 °C/W 1 9/28/98 e PTB 20097 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 960 MHz) Gpe 8.5 9.5 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 960 MHz) ηC 50 — — % Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 960 MHz —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 915 5.2 -2.8 4.9 -4.3 935 5.1 -2.6 4.7 -3.7 960 4.7 -2.1 4.6 -2.9 2 5/19/98 e PTB 20097 Typical Performance Gain & Efficiency vs. Frequency 11 80 70 Gain (dB) Gain (dB) 10 9 60 50 Efficiency (%) 8 VCC = 25 V 40 7 ICQ = 200 mA Pout = 40 W 30 6 900 915 930 945 960 Efficiency (%) 12 (as measured in a broadband circuit) 20 975 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 5/19/98 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20097 Uen Rev. C 09-28-98