AP4527GN3
Preliminary
Advanced Power
Electronics Corp.
▼ Bottom Exposed DFN
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
D1
▼ Low On-resistance
D2
D2
N-CH BVDSS
RDS(ON)
▼ Lower Profile
DFN3*3
▼ RoHS Compliant
20V
G1
S1
35mΩ
ID
S2
G2
4.7A
P-CH BVDSS
-20V
RDS(ON)
65mΩ
ID
-3.3A
D2
D1
G1
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
Continuous Drain Current
3
ID@TA=70℃
Continuous Drain Current
3
1
Units
P-channel
20
-20
V
±12
±12
V
4.7
-3.3
A
3.8
-2.7
A
20
-20
A
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
100
℃/W
200801062pre-1/7
AP4527GN3
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.1
-
V/℃
VGS=4.5V, ID=3.5A
-
-
35
mΩ
VGS=2.5V, ID=2A
-
-
52
mΩ
0.3
-
1.2
V
VDS=5V, ID=3.5A
-
3.5
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=16V, VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=3.5A
-
9.5
15
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IGSS
2
VDS=VGS, ID=250uA
o
IDSS
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=10Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=15V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=3.5A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
2/7
AP4527GN3
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.5A
-
-
65
mΩ
VGS=-2.5V, ID=-1.5A
-
-
100
mΩ
VDS=VGS, ID=-250uA
-0.3
-
-1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-5V, ID=-2.5A
-
2.5
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V ,VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-2.5A
-
10.7
17
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.7
-
nC
VDS=-10V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
32
-
ns
tf
Fall Time
RD=10Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1180
pF
Coss
Output Capacitance
VDS=-15V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
Max.
Unit
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-2.5A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted FR4 board, t≦5s.
3/7
AP4527GN3
50
80
o
T A =25 o C
4.5V
4.0V
40
5.0V
V G =2.5V
40
20
ID , Drain Current (A)
60
ID , Drain Current (A)
T A =150 C
5.0V
4.5V
30
4.0V
20
V G =2.5V
10
0
0
0
1
2
3
4
5
6
7
0
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
100
I D =2A
I D =3.5A
1.6
o
T A =25 C
V G =4.5V
Normalized RDS(ON)
80
RDS(ON) (mΩ)
1
60
1.4
1.2
1.0
40
0.8
0.6
20
1
3
5
7
9
-50
11
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
1.6
1.4
10
1.2
T j =25 o C
VGS(th)(V)
IS (A)
T j =150 o C
1
1
0.8
0.6
0.1
0.4
0.01
0.2
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4527GN3
10
f=1.0MHz
1000
VGS , Gate to Source Voltage (V)
Ciss
8
I D =3.5A
V DS =16V
C (pF)
6
Coss
Crss
100
4
2
0
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
DUTY=0.5
10
ID (A)
1ms
1
10ms
100ms
T A =25 o C
Single Pulse
0.1
1s
DC
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 180℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
D
VDS
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
RG
G
0.5x RATED VDS
G
S
+
10 V
VGS
+
S
VGS
-
Fig 11. Switching Time Circuit
1~ 3 mA
IG
ID
Fig 12. Gate Charge Circuit
5/7
AP4527GN3
40
36
T A =25 o C
TA=150oC
-5.0V
28
30
-4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V
32
20
-3.0V
10
-4.0V
24
65mΩ
20
-3.0V
16
12
8
V G = -2.0V
V G = -2.0V
4
0
0
0
2
4
6
8
0
10
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
160
I D = -2.5A
V GS = -4.5V
I D =-1.5A
1.6
Normalized RDS(ON)
T A =25 o C
RDS(ON) (Ω )
120
80
1.4
1.2
1
0.8
0.6
40
0
1
2
3
4
5
-50
6
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
100
10
1
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1
0.5
0.1
2.01E+08
0
0.01
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4527GN3
8
I D = -2.5A
V DS = -16V
65mΩ
1000
Ciss
6
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
10
Coss
4
100
Crss
2
0
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
Single Pulse
Rthja = 180℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
RD
VDS
D
VDS
0.8 x RATED VDS
G
0.5 x RATED VDS
RG
G
S
S
-10 V
TO THE
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
VGS
-1~-3mA
IG
Fig 11. Switching Time Circuit
VGS
ID
Fig 12. Gate Charge Circuit
7/7