AP9561AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-40V
RDS(ON)
18mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
-39A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-39
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-25
A
-160
A
50
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
2.5
℃/W
62.5
℃/W
1
201303042
AP9561AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-24A
-
-
18
mΩ
VGS=-4.5V, ID=-20A
-
-
26
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
31
-
S
IDSS
Drain-Source Leakage Current
VDS=-32V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-20A
-
27
43
nC
Qgs
Gate-Source Charge
VDS=-32V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
14
-
nC
td(on)
Turn-on Delay Time
VDS=-20V
-
10
-
ns
tr
Rise Time
ID=-20A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
66
-
ns
tf
Fall Time
VGS=-10V
-
90
-
ns
Ciss
Input Capacitance
VGS=0V
-
3000 4800
pF
Coss
Output Capacitance
VDS=-25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.5
11
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-20A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9561AGH-HF
120
160
100
-ID , Drain Current (A)
-ID , Drain Current (A)
120
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
T C = 150 o C
-10V
-7.0 V
-6.0 V
-5.0 V
T C = 25 o C
V G = - 4.0 V
80
80
60
40
40
20
0
0
0
4
8
12
0
16
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
22
2.0
I D = -20 A
T C =25 ℃
I D = -24A
V G = -10V
1.8
20
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
18
1.4
1.2
1.0
0.8
16
0.6
0.4
14
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
I D = -250uA
1.6
Normalized -VGS(th)
-IS(A)
16
12
T j =150 o C
T j =25 o C
8
1.2
0.8
0.4
4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9561AGH-HF
10
f=1.0MHz
4000
8
C iss
3000
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -32V
I D = -20A
6
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
-ID (A)
Operation in this area
limited by RDS(ON)
100us
10
1ms
10ms
100ms
DC
o
T C =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
80
V DS = -5V
T j =25 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
40
30
20
T j =150 o C
60
40
20
10
0
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4