TPD4111K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4111K The TPD4111K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase decode logic, level shift high-side driver, low-side driver, IGBT outputs, FRDs, over-current and under-voltage protection circuits, and a thermal shutdown circuit. It is easy to control a DC brush less motor by applying a signal from a motor controller and a Hall amp/ Hall IC to the TPD4111K. Features • Bootstrap circuit gives simple high-side supply. • Bootstrap diode is built in. • PWM and 3-phase decoder circuit are built in. • 3-phase bridge output using IGBTs. • Outputs Rotation pulse signals. • FRDs are built in. • Incorporating over-current and under-voltage protection, and thermal shutdown. • Package: 23-pin HZIP. • Compatible with Hall amp input and Hall IC input. This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge. Weight HZIP23-P-1.27F : 6.1 g (typ.) HZIP23-P-1.27G : 6.1 g (typ.) HZIP23-P-1.27H : 6.1 g (typ.) 1 2006-06-30 TPD4111K Pin Assignment 1 VS 2 3 4 5 6 7 OS RREF GND VREG VCC IS1 8 U 12 13 14 BUS VBB1 BSV V 9 10 11 W BSW VBB2 IS2 15 16 17 18 19 20 21 22 23 FG HU+ HU- HV+ HV- HW+ HW- Marking Lot No. TPD4111K JAPAN Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-06-30 TPD4111K Block Diagram VCC 6 9 BSU 11 BSV 14 BSW 6V regulator VREG 5 Under- Under- Undervoltage voltage voltage protect- protect- protection ion ion Under-voltage Protect-ion Hall 3-phase HV+ 20 HV‐21 Amp distribution Thermal logic shutdown HW+ 22 Low-side driver FG 17 OS 2 RREF 3 8 U 12 V 13 W HW‐23 VS 1 15 VBB2 Level shift high-side driver HU+ 18 HU‐19 10 VBB1 PWM 16 IS2 Triangular wave Over-current protection 3 7 IS1 4 GND 2006-06-30 TPD4111K Pin Description Pin No. Symbol Pin Description 1 VS Speed control signal input pin. (PWM reference voltage input pin) 2 OS PWM triangular wave oscillation frequency setup pin (Connect a capacitor to this pin.) 3 RREF PWM triangular wave oscillation frequency setup pin (Connect a resistor to this pin.) 4 GND Ground pin 5 VREG 6 V regulator output pin 6 VCC Control power supply pin 7 IS1 IGBT emitter/FRD anode pin 8 U 9 BUS U-phase bootstrap capacitor connecting pin 10 VBB1 U and V-phase high-voltage power supply input pin 11 BSV V-phase bootstrap capacitor connecting pin 12 V V-phase output pin 13 W W-phase high-voltage power supply input pin 14 BSW W-phase bootstrap capacitor connecting pin 15 VBB2 W-phase high-voltage power supply input pin 16 IS2 IGBT emitter/FRD anode pin 17 FG Rotation pulse output pin. (open drain) 18 HU+ U-phase Hall sensor signal input pin (Hall IC can be used.) 19 HU- U-phase Hall sensor signal input pin (Hall IC can be used.) 20 HV+ V-phase Hall sensor signal input pin (Hall IC can be used.) 21 HV- V-phase Hall sensor signal input pin (Hall IC can be used.) 22 HW+ W-phase Hall sensor signal input pin (Hall IC can be used.) 23 HW- W-phase Hall sensor signal input pin (Hall IC can be used.) U-phase output pin 4 2006-06-30 TPD4111K Equivalent Circuit of Input Pins Internal circuit diagram of HU+, HU-, HV+, HV-, HW+, HW- input pins VCC To internal circuit HU+, HU-, HV+, HV-, HW+, HW-, 10 kΩ 13 V 2 kΩ 13 V Internal circuit diagram of VS pin VCC To internal circuit 150 kΩ 6.5 V 75 kΩ VS 4 kΩ 6.5 V Internal circuit diagram of FG pin FG To internal circuit 26 V 5 2006-06-30 TPD4111K Timing Chart HU HV Hall amp input HW VU Output voltage VV VW Rotation pulse FG * : Hall input logic high (H) refers to IN+>IN-. Truth Table Hall amp Input U Phase V Phase W Phase HU HV HW Upper Arm Lower Arm Upper Arm Lower Arm Upper Arm Lower Arm FG H L H ON OFF OFF ON OFF OFF L H L L ON OFF OFF OFF OFF ON H H H L OFF OFF ON OFF OFF ON L L H L OFF ON ON OFF OFF OFF H L H H OFF ON OFF OFF ON OFF L L L H OFF OFF OFF ON ON OFF H L L L OFF OFF OFF OFF OFF OFF L H H H OFF OFF OFF OFF OFF OFF L * : Hall input logic high (H) refers to IN+>IN-. 6 2006-06-30 TPD4111K Absolute Maximum Ratings (Ta = 25°C) Characteristics Power supply voltage Output current (DC) Symbol Rating Unit VBB 250 V VCC 20 V Iout 1 A Output current (pulse) Iout 2 A Input voltage (except VS) VIN −0.5 to VREG + 0.5 V Input voltage (only VS) VVS 8.2 V VREG current IREG 50 mA Power dissipation (Ta = 25°C) PC 4 W Power dissipation (Tc = 25°C) PC 20 W Operating junction temperature Tjopr −20 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Lead-heat sink isolation voltage Vhs 1000 (1 min) Vrms In case that the IC is erroneously connected to 200 VAC power supply, it can withstand a voltage of up to 315 V for 1 min under the condition of VS < 1.1 V. 7 2006-06-30 TPD4111K Electrical Characteristics (Ta = 25°C) Characteristics Operating power supply voltage Current dissipation Hall amp input sensitivity Hall amp input current Symbol Test Condition Min Typ. Max VBB ⎯ 50 ⎯ 185 VCC ⎯ 13.5 15 17.5 IBB VBB = 185 V Duty cycle = 0% ⎯ ⎯ 0.5 ICC VCC = 15 V Duty cycle = 0% ⎯ 1.8 10 IBS (ON) VBS = 15 V, high side ON ⎯ 210 470 IBS (OFF) VBS = 15V, high side OFF ⎯ 200 415 50 ⎯ ⎯ mvp-p IHB(HA) ⎯ -2 0 2 μA V 0 ⎯ 8 Hall amp hysteresis width ΔVIN(HA) 20 30 50 Hall amp input voltage L→H VLH(HA) 5 15 25 Hall amp input voltage H→L VHL(HA) FRD forward voltage PWM ON-duty cycle PWM ON-duty cycle, 0% PWM ON-duty cycle, 100% PWM ON-duty voltage range Output all-OFF voltage Regulator voltage mA ⎯ CMVIN(HA) FRD forward voltage V VHSENS(HA) Hall amp common input voltage Output saturation voltage Unit -25 -15 -5 VCEsatH VCC = 15 V, IC = 0.5 A ⎯ 2.3 3.0 VCesatL VCC = 15 V, IC = 0.5 A ⎯ 2.3 3.0 VFH IF = 0.5 A, high side ⎯ 1.4 2.1 VFL IF = 0.5 A, low side ⎯ 1.4 1.8 IF = 500 μA ⎯ 0.8 1.2 VF (BSD) mV V V V PWMMIN ⎯ 0 ⎯ ⎯ PWMMAX ⎯ ⎯ ⎯ 100 PWM = 0% 1.7 2.1 2.5 V PWM = 100% 4.9 5.4 6.1 V VVS100% − VVS0% 2.8 3.3 3.8 V Output all OFF 1.1 1.3 1.5 V 5 6 7 V 0 ⎯ 6.5 V ⎯ ⎯ 0.5 V VVS0% VVS100% VVSW VVSOFF VREG Speed control voltage range VS FG output saturation voltage VFGsat VCC = 15 V, IO = 30 mA ⎯ VCC = 15 V, IFG = 20 mA % VR ⎯ 0.46 0.5 0.54 V TSD ⎯ 135 ⎯ 185 °C Thermal shutdown hysteresis ΔTSD ⎯ ⎯ 50 ⎯ °C VCC under-voltage protection VCCUVD ⎯ 10 11 12 V VCC under-voltage protection recovery VCCUVR ⎯ 10.5 11.5 12.5 V VBS under-voltage protection VBSUVD ⎯ 9 10 11 V VBS under-voltage protection recovery VBSUVR ⎯ 9.5 10.5 11.5 V Current control voltage Thermal shutdown temperature Refresh operating ON voltage TRFON Refresh operation 1.1 1.3 1.5 V Refresh operating OFF voltage TRFOFF Refresh operation OFF 3.1 3.8 4.6 V Triangular wave frequency fc R = 27 kΩ, C = 1000 pF 16.5 20 25 kHz Output-on delay time ton VBB = 141 V, VCC = 15 V, IC = 0.5 A ⎯ 1.8 3 μs Output-off delay time toff VBB = 141 V, VCC = 15 V, IC = 0.5 A ⎯ 1.2 3 μs FRD reverse recovery time trr VBB = 141V, VCC = 15 V, IC = 0.5 A ⎯ 200 ⎯ ns 8 2006-06-30 TPD4111K Application Circuit Example 15 V VCC BSU 6 9 C5 11 14 VREG 6V regulator 5 C6 R3 Under- Under- Undervoltage voltage voltage protect- protect- protection ion ion Under-voltage Protect-ion 21 HW+ 22 23 Rotation pulse FG Speed instruction VS OS RREF C4 15 BSW VBB1 VBB2 C1 C2 C3 Level shift high-side driver HU+ 18 19 HV+ 20 10 BSV Hall Amp 3-phase Thermal distribution shutdown 8 12 13 logic U M V W Low-side driver 17 1 PWM 2 Triangular 3 wave 16 Over-current protection 7 IS2 IS1 4 R1 GND R2 9 2006-06-30 TPD4111K External Parts Standard external parts are shown in the following table. Part Recommended Value C1, C2, C3 25 V/2.2 μF R1 Purpose Remarks Bootstrap capacitor (Note 1) 0.62 Ω ± 1% (1 W) Current detection (Note 2) C4 10 V/1000 pF ± 5% PWM frequency setup (Note 3) R2 27 kΩ ± 5% PWM frequency setup (Note 3) C5 25 V/10 μF Control power supply stability (Note 4) C6 10 V/0.1 μF VREG power supply stability (Note 4) R3 5.1 kΩ FG pin pull-up resistor (Note 5) Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. Although the IC can operate at above the VBS undervoltage level, it is however recommended that the capacitor voltage be greater than or equal to 13.5 V to keep the power dissipation small. The capacitor is biased by VCC and must be sufficiently derated accordingly. Note 2: The following formula shows the detection current: IO = VR ÷ R1 (VR = 0.5 V typ.) Do not exceed a detection current of 1 A when using the IC. Note 3: With the combination of Cos and RREF shown in the table, the PWM frequency is around 20 kHz. The IC intrinsic error factor is around 10%. The PWM frequency is broadly expressed by the following formula. (In this case, the stray capacitance of the printed circuit board needs to be considered.) fPWM = 0.65 ÷ {Cos × (RREF + 4.25 kΩ)} [Hz] RREF creates the reference current of the PWM triangular wave charge/discharge circuit. If RREF is set too small it exceeds the current capacity of the IC internal circuits and the triangular wave distorts. Set RREF to at least 9 kΩ. Note 4: When using the IC, some adjustment is required in accordance with the use environment. When mounting, place as close to the base of the IC leads as possible to improve noise elimination. Note 5: The FG pin is open drain. Note that when the FG pin is connected to a power supply with a voltage higher than or equal to the VCC, a protection circuit is triggered so that the current flows continuously. If the FG pin is not used, connect to the GND. Note 6: If noise is detected on the Input signal pin, add a capacitor between inputs. Note 7: A Hall device should use an indium antimony system. Handling precautions (1) (2) (3) (4) When switching the power supply to the circuit on/off, ensure that VS < VVSOFF (all IGBT outputs off). At that time, either the VCC or the VBB can be turned on/off first. Note that if the power supply is switched off as described above, the IC may be destroyed if the current regeneration route to the VBB power supply is blocked when the VBB line is disconnected by a relay or similar while the motor is still running. The triangular wave oscillator circuit, with externally connected COS and RREF, charges and discharges minute amounts of current. Therefore, subjecting the IC to noise when mounting it on the board may distort the triangular wave or cause malfunction. To avoid this, attach external parts to the base of the IC leads or isolate them from any tracks or wiring which carries large current. The PWM of this IC is controlled by the on/off state of the high-side IGBT. If a motor is locked where VBB voltage is low and duty is 100%, it may not be possible to reboot after the load is released as a result of the high side being ON immediately prior to the motor being locked. This is because, over time, the bootstrap voltage falls, the high-side voltage decrease protection operates and the high-side output becomes OFF. In this case, since the level shift pulse necessary to turn the high side ON cannot be generated, reboot is not possible. A level shift pulse is generated by either the edge of a Hall sensor output or the edge of an internal PWM signal, but neither edge is available due to the motor lock and duty 100% command. In order to reboot after a lock, the high-side power voltage must return to a level 0.5V (typ.) higher than the voltage decrease protection level, and a high-side input signal must be introduced. As a high-side input signal is created by the aforementioned level shift pulse, it is possible to reboot by reducing PWM duty to less than 100% or 10 2006-06-30 TPD4111K by forcing the motor to turn externally and creating an edge at a Hall sensor output. In order to ensure reboot after a system lock, the motor specification must be such that maximum duty is less than 100%. Description of Protection Function (1) Over-current protection The IC incorporates an over-current protection circuit to protect itself against over current at startup or when a motor is locked. This protection function detects voltage generated in the current-detection resistor connected to the IS1/IS2 pin. When this voltage exceeds VR = 0.5 V (typ.), the high-side IGBT output, which is on, temporarily shuts down after a mask period, preventing any additional current from flowing to the IC. The next PWM ON signal releases the shutdown state. Duty ON PWM reference voltage Duty OFF Triangle wave Mask period + tOFF tOFF tON tON Over-current setting value Output current Retry Over-current shutdown (2) (3) Under-voltage protection The IC incorporates an under-voltage protection circuit to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the VCC power supply falls to the IC internal setting (VCCUVD = 11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IC is automatically restored and the IGBT is turned on/off again by the input. When the VBS supply voltage drops (VBSUVD = 10 V typ.), the high-side IGBT output shuts down. When the VBSUVR (= 10.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is turned on/off again by the input signal. Thermal shutdown The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature. When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat generation , all IGBT outputs shut down regardless of the input. This protection function has hysteresis (ΔTSD = 50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and the IGBT is turned on/off again by the input. Because the chip contains just one temperature-detection location, when the chip heats up due to the IGBT for example, the distance between the detection location and the IGBT (the source of the heat) can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the initial thermal shutdown temperature. 11 2006-06-30 TPD4111K Description of Bootstrap Capacitor Charging and Its Capacitance The IC uses bootstrapping for the power supply for high-side drivers. The bootstrap capacitor is charged by turning on the low-side IGBT of the same arm (approximately 1/5 of PWM cycle) while the high-side IGBT controlled by PWM is off. (For example, to drive at 20 kHz, it takes approximately 10 ms per cycle to charge the capacitor.) When the VS voltage exceeds 3.8 V (55% duty), the low-side IGBT is continuously in the off state. This is because when the PWM on-duty becomes larger, the arm is short-circuited while the low-side IGBT is on. Even in this state, because PWM control is being performed on the high-side IGBT, the regenerative current of the diode flows to the low-side FRD of the same arm, and the bootstrap capacitor is charged. Note that when the on-duty is 100%, diode regenerative current does not flow; thus, the bootstrap capacitor is not charged. When driving a motor at 100 % duty cycle, take the voltage drop at 100% duty (see the figure below) into consideration to determine the capacitance of the bootstrap capacitor. Capacitance of the bootstrap capacitor = Consumption current (max) of the high-side driver × Maximum drive time /(VCC − VF (BSD) + VF (FRD) − 13.5) [F] VF (BSD) : Bootstrap diode forward voltage VF (FRD) : Flywheel diode forward voltage Consideration must be made for aging and temperature change of the capacitor. Duty cycle 100% (VS: 5.4 V) Duty cycle 80% C Triangular wave Duty cyle 55% (VS: 3.8 V) PWM reference voltage B Duty cycle 0% (VS: 2.1 V) VVsOFF (VS: 1.3 V) Low-side ON High-side duty ON A GND VS Range IGBT Operation A Both high- and low-side OFF. B Charging range. Low-side IGBT refreshing on the phase the high-side IGBT in PWM. C No charging range. High-side at PWM according to the timing chart. Low-side no refreshing. (A) 1.1 Peak winding current 1.0 Peak winding current (A) Safe Operating Area 0 0 0 185 Power supply voltage Figure 1 VBB (V) 0 185 Power supply voltage SOA at Tj = 135°C Figure 2 VBB (V) SOA at Tc = 95°C Note 1: The above safe operating areas are at Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature exceeds these, the safe operation areas are reduced. Note 2: The above safe operating areas include the over-current protection operation area. 12 2006-06-30 TPD4111K VCEsatL – Tj VCEsatL (V) IC = 700 mA VCC = 15 V 3.0 IC = 500 mA 2.6 IGBT saturation voltage IGBT saturation voltage VCEsatH (V) VCEsatH – Tj 3.4 IC = 300 mA 2.2 1.8 1.4 −20 20 60 Junction temperature 100 Tj 140 3.4 IC = 700 mA VCC = 15 V 3.0 IC = 500 mA 2.6 IC = 300 mA 2.2 1.8 1.4 −20 (°C) 20 60 Junction temperature VFL (V) 1.6 IF = 700 mA IF = 500 mA 1.4 IF = 300 mA 1.2 1.0 0.8 −20 20 60 Junction temperature 100 Tj 1.6 IF = 500 mA IF = 300 mA 1.2 1.0 (°C) 20 60 Junction temperature ICC – VCC (mA) (V) 25°C 135°C VREG 2.5 Regulator voltage ICC Tj 140 (°C) −20°C 25°C 135°C −20°C Consumption current 100 VREG – VCC 7.0 2.0 1.5 10 (°C) IF = 700 mA 1.4 0.8 −20 140 3.0 1.0 5 Tj 140 VFL – Tj FRD forward voltage FRD forward voltage VFH (V) VFH – Tj 100 15 Control power supply voltage (V) Ireg = 30 mA 6.0 5.5 5.0 5 20 VCC 6.5 10 15 Control power supply voltage 13 20 VCC (V) 2006-06-30 TPD4111K tON – Tj tOFF – Tj 3.0 tOFF (μs) 2.0 1.0 Output-off delay time tON Output-on delay time VBB = 141 V VCC = 15 V IC = 0.5 A (μs) 3.0 VBB = 141 V VCC = 15 V IC = 0.5 A High-side Low-side 0 −20 20 60 Junction temperature 100 Tj High-side Low-side 2.0 1.0 0 −20 140 (°C) 20 Junction temperature VS – Tj Tj 140 (°C) VCCUV – Tj Under-voltage protection operating lt V UV (V) WM on-duty set-up voltage VS (V) 100 12.5 6.0 VS 100% 4.0 VSW 2.0 VS 0% VCC = 15 V 0 −20 20 60 Junction temperature 100 Tj VCCUVD VCCUVR 12.0 11.5 11.0 10.5 10.0 −20 140 (°C) 20 VBSUV – Tj 100 Tj 140 (°C) VR – Tj 1.0 Current control operating voltage V (V) VBSUVD VBSUVR 11.0 10.5 10.0 9.5 9.0 −20 60 Junction temperature 11.5 Under-voltage protection operating voltage VBSUV (V) 60 20 60 Junction temperature 100 Tj VCC = 15 V 0.8 0.6 0.4 0.2 0 −20 140 (°C) 20 60 Junction temperature 14 100 Tj 140 (°C) 2006-06-30 TPD4111K IBS – VBS (ON) IBS – VBS (OFF) (μA) −20°C 25°C IBS (OFF) 135°C 400 Current consumption Current consumption IBS (ON) (μA) 500 300 200 100 12 14 16 Control power supply voltage 18 VBS 500 −20°C 25°C 135°C 400 300 200 100 12 (V) 14 16 Control power supply voltage VF (BSD) – Tj 18 VBS (V) Wton – Tj (μJ) 1.0 Wton 0.9 Turn-on loss BSD forward voltage VF (BSD) (V) 50 IF = 700 μA 0.8 IF = 500 μA 0.7 40 IC = 700 mA 30 IC = 500 mA 20 IC = 300 mA 10 IF = 300 μA 0.6 −20 20 60 Junction temperature 100 Tj 0 −20 140 (°C) 20 Junction temperature Wtoff – Tj Width 8 6 IC = 500 mA 4 IC = 300 mA Hall amplifier Hysteresis DVIN(HA) (mV) (μJ) Wtoff Tj 140 (°C) 70 IC = 700 mA Turn-off loss 100 DVIN(HA)– Tj 10 2 0 −20 60 20 60 Junction temperature 100 Tj 60 50 40 30 20 −20 140 (°C) 20 60 Junction temperature 15 100 Tj 140 (°C) 2006-06-30 0.5 A 16 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 1. VS 0.5 A 27 kΩ 1000 pF 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 1. VS TPD4111K Test Circuits IGBT Saturation Voltage (U-phase low side) 2.5 V VM HU+ = 0 V HW+ = 5V HV+ = 5V VCC = 15 V VS = 6.1 V FRD Forward Voltage (U-phase low side) VM 2006-06-30 30 mA 27 kΩ 1000 pF 17 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 1. VS 27 kΩ 1000 pF 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 1. VS TPD4111K VCC Current Dissipation AM VCC = 15 V Regulator Voltage VM VCC = 15 V 2006-06-30 IM HV+ 0V 2.2 μF 280 Ω 27 kΩ 1000 pF 5V IM tON 18 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 1. VS TPD4111K Output ON/OFF Delay Time (U-phase low side) 2.5 V HU+ = 0 V HW+ = 0 V HV+ = PG U = 141 V VCC = 15 V VS = 6.1 V 90% 10% 90% 10% tOFF 2006-06-30 TPD4111K 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 15 V HU+ = 5 V 2 kΩ 2. OS 3. RREF 2.5 V 27 kΩ 1000 pF 1. VS PWM ON-duty Setup Voltage (U-phase high side) HW+ = 0 V HV+ = 0 V VM VBB = 18 V VCC = 15 V 0 V → 6.1 V 6.1 V → 0 V VS = Note: Sweeps the VS pin voltage and monitors the U pin. When output is turned off from on, the PWM = 0%. When output is full on, the PWM = 100%. 19 2006-06-30 TPD4111K 23. FG 22. FR 21. HW 20. HV 19. HU 18. IS2 17. VBB2 16. BSW 15. W 14. ⎯ (NC) 13. BSV 12. V 11. VBB1 10. BSU 9. U 8. ⎯ (NC) 7. IS1 6. VCC 5. VREG 4. GND 2 kΩ HU = 5 V VM HV = 0 V HW = 0 V 27 kΩ 1000 pF 1. VS 2. OS 3. RREF VCC Under-voltage Protection Operation/Recovery Voltage (U-phase low side) FR = 0 V U = 18 V VCC = 15 V → 6 V 6 V → 15 V VS = 6 V Note:Sweeps the VCC pin voltage from 15 V and monitors the U pin voltage. The VCC pin voltage when output is off defines the under-voltage protection operating voltage. Also sweeps from 6 V to increase. The VCC pin voltage when output is on defines the under voltage protection recovery voltage. VM 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 12. V 11. BSV 10. VBB1 13. W 2.5 V 2 kΩ 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 2. OS 3. RREF 27 kΩ 1000 pF 1. VS VBS Under-voltage Protection Operation/Recovery Voltage (U-phase high side) HU+ = 5 V HV+ = 0 V HW+ = 0 V VBB = 18 V BSU = 15 V → 6 V 6 V → 15 V VCC = 15 V VS = 6.1 V Note:Sweeps the BSU pin voltage from 15 V and monitors the VBB pin voltage. The BSU pin voltage when output is off defines the under-voltage protection operating voltage. Also sweeps the BSU pin voltage from 6 V and changes the VS voltage from 6 V → 0 V → 6V. The BSU pin voltage when output is on defines the under-voltage protection recovery voltage. 20 2006-06-30 TPD4111K 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 2.5 V 1000 pF 15 V HU+ = 5 V 27 kΩ HV+ = 0 V HW+ = 0 V VBB = 18 V 2 kΩ 1. VS Current Control Operating Voltage (U-phase high side) VM IS = 0 V → 0.6 V VCC = 15 V VS = 6.1 V Note:Sweeps the IS pin voltage and monitors the U pin voltage. The IS pin voltage when output is off defines the current control operating voltage. 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2.5 V HU+ = 5/0 V 27 kΩ 2. OS 1000 pF 1. VS VBS Current Consumption (U-phase high side) HV+ = 0 V AM HW+ = 0 V BSU = 15 V VCC = 15 V VS = 6.1 V 21 2006-06-30 VM 500 μA 22 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 8. U 7. IS1 6. VCC 5. VREG 4. GND 3. RREF 2. OS 1. VS TPD4111K BSD Forward Voltage (U-phase) 2006-06-30 TPD4111K 23. HW- 22. HW+ 21. HV- 20. HV+ 19. HU- 2.5 V HU+ = 0 V 5 mH L 18. HU+ 17. FG 16. IS2 15. VBB2 14. BSW 13. W 12. V 11. BSV 10. VBB1 9. BSU 2.2 μF 8. U 7. IS1 6. VCC 5. VREG 4. GND 2. OS 3. RREF VM 27 kΩ 1000 pF 1. VS Turn-On/Off Loss (low-side IGBT + high-side FRD) HV+ = PG HW+ = 0 V VBB = 141 V IM VCC = 15 V VS = 6.1 V Input (HV+) IGBT (C-E voltage) (U-GND) Power supply current Wtoff Wton 23 2006-06-30 TPD4111K Package Dimensions Weight: 6.1 g (typ.) 24 2006-06-30 TPD4111K Package Dimensions Weight: 6.1 g (typ.) 25 2006-06-30 TPD4111K Package Dimensions Weight: 6.1 g (typ.) 26 2006-06-30 TPD4111K RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 27 2006-06-30