TPD4146K
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
TPD4146K
The TPD4146K is a DC brushless motor driver using
high-voltage PWM control. It is fabricated using a high-voltage
SOI process. The device contains PWM circuit, 3-phase decode
circuit, level shift high-side driver, low-side driver, IGBT outputs,
FRDs, over-current and under-voltage protection circuits, and a
thermal shutdown circuit. It is easy to control a DC brush less
motor by applying a signal from a motor controller and a Hall
amp/ Hall IC to the TPD4146K.
HDIP26-P-1332-2.00
Features
Weight: 3.8 g (typ.)
•
High voltage power side and low voltage signal side terminal
are separated.
•
Bootstrap circuits give simple high-side supply.
•
Bootstrap diodes are built in.
•
PWM and 3-phase decode circuit are built in.
•
Pulses-per-revolution output:
•
FGC = High: 3 pulse/electrical angle: 360°
FGC = Low: 1 pulses/electrical angle: 360°
3-phase bridge output using IGBTs.
•
FRDs are built in.
•
Included over-current and under-voltage protection, and thermal shutdown.
•
Package: 26-pin DIP.
•
Compatible with Hall amp input and Hall IC input.
This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure
that the environment is protected against electrostatic discharge.
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2012-02-09
TPD4146K
FGC
Pin Assignment
Marking
Lot Code.
(Weekly code)
TPD4123K
TPD4146K
Part No. (or abbreviation code)
2
Country of origin
2012-02-09
TPD4146K
Block Diagram
VCC 11
17 BSU
22 BSV
24 BSW
6V
regulator
VREG 10
Under- Under- Undervoltage voltage voltage
protect- protect- protection
ion
ion
Under-voltage
protection
HU+ 2
HU- 3
Hall
HV+ 4
HV- 5
Amp
23 VBB
Level shift
high-side
driver
3-phase
distribution
logic
Thermal
18 U
shutdown
21 V
HW+ 6
25 W
HW- 7
Low-side
driver
FGC 8
FG 9
VS 14
RREF 13
OS 12
26 IS2
PWM
Triangular
wave
20 IS1
Over-current
protection
3
15 RS
1/16 GND
2012-02-09
TPD4146K
Pin Description
Pin No.
Symbol
Pin Description
1
GND
Ground pin.
2
HU+
U-phase Hall amp signal input pin. (Hall IC can be used.)
3
HU-
U-phase Hall amp signal input pin. (Hall IC can be used.)
4
HV+
V-phase Hall amp signal input pin. (Hall IC can be used.)
5
HV-
V-phase Hall amp signal input pin. (Hall IC can be used.)
6
HW+
W-phase Hall amp signal input pin. (Hall IC can be used.)
7
HW-
W-phase Hall amp signal input pin. (Hall IC can be used.)
8
FGC
FG pulse count select (High or open = 3 ppr; Low = 1 ppr).
9
FG
10
VREG
11
VCC
Control power supply pin.
12
OS
PWM triangular wave oscillation frequency setup pin. (Connect a capacitor to this pin.)
13
RREF
14
VS
Speed control signal input pin. (PWM reference voltage input pin.)
15
RS
Over current detection pin.
16
GND
Ground pin.
17
BSU
U-phase bootstrap capacitor connecting pin.
18
U
19
NC
Unused pin, which is not connected to the chip internally.
20
IS1
IGBT emitter/FRD anode pin.
21
V
22
BSV
V-phase bootstrap capacitor connecting pin.
23
VBB
High-voltage power supply input pin.
24
BSW
W-phase bootstrap capacitor connecting pin.
25
W
W-phase output pin.
26
IS2
IGBT emitter/FRD anode pin.
Rotation pulse output pin.
6 V regulator output pin.
PWM triangular wave oscillation frequency setup pin. (Connect a resistor to this pin.)
U-phase output pin.
V-phase output pin.
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2012-02-09
TPD4146K
Internal circuit diagrams
Internal circuit diagram of HU+, HU-, HV+, HV-, HW+, HW- input pins
VCC
To internal circuit
HU+, HU-,
HV+, HV-,
HW+, HW-,
4 kΩ
2 kΩ
19.5 V
Internal circuit diagram of VS pin
VCC
To internal circuit
VS
4 kΩ
25 kΩ
19.5 V
225 kΩ
Internal circuit diagram of FG pin
FG
To internal circuit
250kΩ
Internal circuit diagram of RS pin
VCC
200kΩ
VREG
To internal circuit
158kΩ
RS
4 kΩ
19.5 V
10pF
Internal circuit diagram of FGC pin
VCC
VREG
FGC
To internal circuit
4 kΩ
200kΩ
2 kΩ
19.5 V
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2012-02-09
TPD4146K
Timing Chart
HU
Hall amp input
HV
HW
VU
VV
Output voltage
VW
Revolution pulse
FG
(1 pulse）
Revolution pulse
FG
(3 pulse）
Note: Hall amp input logic high (H) refers to H*+>H*-. (*: U/V/W)
Truth Table
Hall amp input
FGC
U Phase
V Phase
W Phase
FG
HU
HV
HW
High side
Low side
High side
Low side
High side
Low side
H
H
L
H
OFF
ON
ON
OFF
OFF
OFF
H
H
H
L
L
OFF
ON
OFF
OFF
ON
OFF
L
H
H
H
L
OFF
OFF
OFF
ON
ON
OFF
H
H
L
H
L
ON
OFF
OFF
ON
OFF
OFF
L
H
L
H
H
ON
OFF
OFF
OFF
OFF
ON
H
H
L
L
H
OFF
OFF
ON
OFF
OFF
ON
L
H
L
L
L
OFF
OFF
OFF
OFF
OFF
OFF
L
H
H
H
H
OFF
OFF
OFF
OFF
OFF
OFF
L
L
H
L
H
OFF
ON
ON
OFF
OFF
OFF
H
L
H
L
L
OFF
ON
OFF
OFF
ON
OFF
H
L
H
H
L
OFF
OFF
OFF
ON
ON
OFF
H
L
L
H
L
ON
OFF
OFF
ON
OFF
OFF
L
L
L
H
H
ON
OFF
OFF
OFF
OFF
ON
L
L
L
L
H
OFF
OFF
ON
OFF
OFF
ON
L
L
L
L
L
OFF
OFF
OFF
OFF
OFF
OFF
L
L
H
H
H
OFF
OFF
OFF
OFF
OFF
OFF
H
Note: Hall amp input logic high (H) refers to H*+>H*-. (*: U/V/W)
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2012-02-09
TPD4146K
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VBB
500
V
VCC
20
V
Output current (DC)
Iout
1
A
Output current (pulse)
Ioutp
2
A
Input voltage (except VS)
VIN
-0.5 to VREG + 0.5
V
Input voltage (only VS)
VVS
8.2
V
VREG current
IREG
50
mA
FG voltage
VFG
20
V
FG current
IFG
20
mA
Power dissipation (Tc = 25°C)
PC
23
W
Operating junction temperature
Tjopr
-40 to 135
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to 150
°C
Power supply voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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TPD4146K
Electrical Characteristics (Ta = 25°C)
Characteristics
Operating power supply voltage
Current dissipation
Symbol
Test Condition
Min
Typ.
Max
VBB
⎯
50
280
450
VCC
⎯
13.5
15
17.5
IBB
VBB = 450 V
Duty cycle = 0 %
⎯
⎯
0.5
ICC
VCC = 15 V
Duty cycle = 0 %
⎯
2.0
10
IBS (ON)
VBS = 15 V, high side ON
⎯
190
470
IBS (OFF)
VBS = 15 V, high side OFF
⎯
180
415
Unit
V
mA
μA
VHSENS(HA)
⎯
50
―
―
mVp-p
IHB(HA)
⎯
-2
0
2
μA
CMVIN(HA)
⎯
0
⎯
8
V
Hall amp hysteresis width
ΔVIN(HA)
⎯
8
30
62
Hall amp input voltage L→H
VLH(HA)
⎯
4
15
31
Hall amp input voltage H→L
VHL(HA)
⎯
Hall amp input sensitivity
Hall amp input current
Hall amp common input voltage
Output saturation voltage
FRD forward voltage
BSD forward voltage
PWM ON-duty cycle
PWM ON-duty cycle, 0 %
-31
-15
-4
VCEsatH
VCC = 15 V, IC = 0.5 A, high side
⎯
2.1
2.7
VCEsatL
VCC = 15 V, IC = 0.5 A, low side
⎯
2.1
2.7
VFH
IF = 0.5 A, high side
⎯
1.7
2.2
VFL
IF = 0.5 A, low side
⎯
1.7
2.2
IF = 500 μA
⎯
0.8
1.2
VF (BSD)
V
V
⎯
0
⎯
⎯
PWMMAX
⎯
⎯
⎯
100
PWM = 0 %
1.7
2.1
2.5
V
PWM = 100 %
4.9
5.4
6.1
V
VVS100 % − VVS0 %
2.8
3.3
3.8
V
Output all OFF
1.1
1.3
1.5
V
5
6
7
V
0
⎯
6.5
V
⎯
⎯
0.5
V
VVS0 %
VVS100 %
PWM ON-duty voltage range
VVSW
Regulator voltage
V
PWMMIN
PWM ON-duty cycle, 100 %
Output all-OFF voltage
mV
VVSOFF
VREG
Speed control voltage range
VS
FG output saturation voltage
VFGsat
VCC = 15 V, IREG = 30 mA
⎯
VCC = 15 V, IFG = 5 mA
%
Current control voltage
VR
⎯
0.46
0.5
0.54
V
Current control delay time
Dt
⎯
⎯
4.5
6.5
μs
TSD
⎯
135
⎯
185
°C
Thermal shutdown hysteresis
ΔTSD
⎯
⎯
50
⎯
°C
VCC under-voltage protection
VCCUVD
⎯
10
11
12
V
VCC under-voltage protection recovery
VCCUVR
⎯
10.5
11.5
12.5
V
VBS under-voltage protection
VBSUVD
⎯
9
10
11
V
VBS under-voltage protection recovery
VBSUVR
⎯
9.5
10.5
11.5
V
Thermal shutdown temperature
Refresh operating ON voltage
TRFON
Refresh operation ON
1.1
1.3
1.5
V
Refresh operating OFF voltage
TRFOFF
Refresh operation OFF
3.1
3.8
4.6
V
Triangular wave frequency
fc
R = 27 kΩ, C = 1000 pF
16.5
20
25
kHz
Output-on delay time
ton
VBB = 280 V, VCC = 15 V, IC = 0.5 A
⎯
2.5
3.5
μs
Output-off delay time
toff
VBB = 280 V, VCC = 15 V, IC = 0.5 A
⎯
1.9
3
μs
FRD reverse recovery time
trr
VBB = 280 V, VCC = 15 V, IC = 0.5 A
⎯
150
⎯
ns
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2012-02-09
TPD4146K
Application Circuit Example
15 V
VCC
11
17
C5
22
24
VREG
Under- Under- Undervoltage voltage voltage
protect- protect- protection
ion
ion
6V
regulator
10
23
BSU
BSV
BSW
VBB
C6
R3
R
HU+
C
HV+
C
HW+
R
C
FG
R
Speed
instruction
R2
VS
R
2
3
Hall
4
Amp
5
C
Thermal
18
logic
shutdown
21
25
13
RREF
12
OS
C4
U
M
V
W
Low-side
driver
8
14
C
distribution
6
9
C1 C2 C3
Level shift
high-side
driver
3-phase
7
FGC
Rotation
pulse
Under-voltage
protection
26
PWM
Triangular
Over-current
protection
wave
20
15
IS1
RS
R1
1/16
9
IS2
GND
2012-02-09
TPD4146K
External Parts
Typical external parts are shown in the following table.
Part
Typical
Purpose
Remarks
C1, C2, C3
25 V/2.2 μF
Bootstrap capacitor
(Note 1)
R1
0.62 Ω ± 1 % (1 W)
Current detection
(Note 2)
C4
25 V/1000 pF ± 5 %
PWM frequency setup
(Note 3)
R2
27 kΩ ± 5 %
PWM frequency setup
(Note 3)
C5
25 V/10 μF
Control power supply stability
(Note 4)
C6
25 V/0.1 μF
VREG power supply stability
(Note 4)
R3
5.1 kΩ
FG pin pull-up resistor
(Note 5)
Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. Although the IC
can operate at above the VBS undervoltage level, it is however recommended that the capacitor voltage be
greater than or equal to 13.5 V to keep the power dissipation small. The capacitor is biased by VCC and
must be sufficiently derated accordingly.
Note 2: The following formula shows the detection current: IO = VR ÷ R1 (VR = 0.5 V typ.)
Do not exceed a detection current of 1 A when using the IC.
Note 3: With the combination of C4 and R2 shown in the table, the PWM frequency is around 20 kHz. The IC
intrinsic error factor is around 10 %.
The PWM frequency is broadly expressed by the following formula. (In this case, the stray capacitance of
the printed circuit board needs to be considered.)
fc = 0.65 ÷ { C4 × (R2 + 4.25 kΩ)} [Hz]
R2 creates the reference current of the PWM triangular wave charge/discharge circuit. If R2 is set too small
it exceeds the current capacity of the IC internal circuits and the triangular wave distorts. Set R2 to at least 9
kΩ.
Note 4: When using the IC, adjustment is required in accordance with the use environment. When mounting, place
as close to the base of the IC leads as possible to improve noise elimination.
Note 5: The FG pin is open drain. If the FG pin is not used, connect to the GND.
Note 6: If noise is detected on the Input signal pin, add a capacitor between inputs.
Note 7: A Hall device should use an indium antimony system. It recommend that the peak Hall device voltage
should set more than 300mV.
Handling precautions
(1)
(2)
(3)
(4)
When switching the power supply to the circuit on/off, ensure that VS < VVSOFF (all IGBT outputs
off). At that time, either the VCC or the VBB can be turned on/off first. Note that if the power supply is
switched off as described above, the IC may be destroyed if the current regeneration route to the VBB
power supply is blocked when the VBB line is disconnected by a relay or similar while the motor is
still running.
The triangular wave oscillator circuit, with externally connected C4 and R2, charges and discharges
minute amounts of current. Therefore, subjecting the IC to noise when mounting it on the board may
distort the triangular wave or cause malfunction. To avoid this, attach external parts to the base of
the IC leads or isolate them from any tracks or wiring which carries large current.
The PWM of this IC is controlled by the on/off state of the high-side IGBT.
If a motor is locked where VBB voltage is low and duty is 100 %, it may not be possible to reboot after
the load is released as a result of the high side being ON immediately prior to the motor being locked.
This is because, over time, the bootstrap voltage falls, the high-side voltage decrease protection
operates and the high-side output becomes OFF. In this case, since the level shift pulse necessary to
turn the high side ON cannot be generated, reboot is not possible. A level shift pulse is generated by
either the edge of a Hall sensor output or the edge of an internal PWM signal, but neither edge is
available due to the motor lock and duty 100 % command. In order to reboot after a lock, the high-side
power voltage must return to a level 0.5 V (typ.) higher than the voltage decrease protection level, and
a high-side input signal must be introduced. As a high-side input signal is created by the
aforementioned level shift pulse, it is possible to reboot by reducing PWM duty to less than 100 % or
by forcing the motor to turn externally and creating an edge at a Hall sensor output. In order to
ensure reboot after a system lock, the motor specification must be such that maximum duty is less
than 100 %.
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2012-02-09
TPD4146K
Description of Protection Function
(1)
Over-current protection
The IC incorporates an over-current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current-detection
resistor connected to the RS pin. When this voltage exceeds VR (= 0.5 V typ.), the high-side IGBT
output, which is on, temporarily shuts down after a delay time, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
Duty ON
PWM reference voltage
Duty OFF
Triangle wave
delay time
toff
ton
ton
Over-current setting value
Output current
Retry
Over-current shutdown
(2)
(3)
Under-voltage protection
The IC incorporates under-voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the VCC voltage or the VBS voltage drops.
When the VCC power supply falls to the IC internal setting VCCUVD (= 11 V typ.), all IGBT outputs
shut down regardless of the input. This protection function has hysteresis. When the VCC power
supply reaches 0.5 V higher than the shutdown voltage (VCCUVR (= 11.5 V typ.)), the IC is
automatically restored and the IGBT is turned on/off again by the input.
When the VBS supply voltage drops VBSUVD (= 10 V typ.), the high-side IGBT output shuts down.
When the VBS supply voltage reaches 0.5 V higher than the shutdown voltage (VBSUVR (= 10.5 V
typ.)), the IGBT is turned on/off again by the input signal.
Thermal shutdown
The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal
heat generation, all IGBT outputs shut down regardless of the input. This protection function has
hysteresis ΔTSD (= 50 °C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is
automatically restored and the IGBT is turned on/off again by the input.
Because the chip contains just one temperature-detection location, when the chip heats up due to the
IGBT for example, the distance between the detection location and the IGBT (the source of the heat)
can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip
may rise higher than the initial thermal shutdown temperature.
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2012-02-09
TPD4146K
Description of Bootstrap Capacitor Charging and Its Capacitance
The IC uses bootstrapping for the power supply for high-side drivers.
The bootstrap capacitor is charged by turning on the low-side IGBT of the same arm (approximately 1/5 of PWM
cycle) while the high-side IGBT controlled by PWM is off. (For example, to drive at 20 kHz, it takes approximately
10 μs per cycle to charge the capacitor.) When the VS voltage exceeds 3.8 V (55 % duty), the low-side IGBT is
continuously in the off state. This is because when the PWM on-duty becomes larger, the arm is short-circuited
while the low-side IGBT is on. Even in this state, because PWM control is being performed on the high-side IGBT,
the regenerative current of the diode flows to the low-side FRD of the same arm, and the bootstrap capacitor is
charged. Note that when the on-duty is 100 %, diode regenerative current does not flow; thus, the bootstrap
capacitor is not charged.
When driving a motor at 100 % duty cycle, take the voltage drop at 100 % duty (see the figure below) into
consideration to determine the capacitance of the bootstrap capacitor.
Capacitance of the bootstrap capacitor = Current dissipation (max) of the high-side driver × Maximum drive time
/(VCC − VF (BSD) + VF (FRD) − 13.5) [F]
VF (BSD) : Bootstrap diode forward voltage
VF (FRD) : First recovery diode forward voltage
Consideration must be made for aging and temperature change of the capacitor.
Duty cycle 100 % (VS: 5.4 V)
Duty cycle 80 %
C
Triangular wave
Duty cycle 55 % (VS: 3.8 V)
PWM reference voltage
B
Duty cycle 0 % (VS: 2.1 V)
VVsOFF (VS: 1.3 V)
Low-side ON
High-side duty ON
A
GND
VS Range
IGBT Operation
A
Both high and low-side OFF.
B
Charging range. Low-side IGBT refreshing on the phase the high-side IGBT in PWM.
C
No charging range. High-side at PWM according to the timing chart. Low-side no refreshing.
1.0
Peak winding current
(A)
Safe Operating Area
0
0
450
Power supply voltage
Figure 1
VBB
(V)
SOA at Tj = 135°C
Note: The above safe operating areas are at Tj = 135 °C (Figure 1).
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2012-02-09
TPD4146K
VCEsatL (V)
VCEsatL – Tj
VCC = 15 V
IC = 700 mA
3.0
2.6
IGBT saturation voltage
IGBT saturation voltage
VCEsatH
(V)
VCEsatH – Tj
3.4
IC = 500 mA
2.2
IC = 300 mA
1.8
1.4
−50
0
50
Junction temperature
100
Tj
150
3.4
VCC = 15 V
3.0
IC = 700 mA
2.6
IC = 500 mA
2.2
IC = 300 mA
1.8
1.4
−50
(°C)
0
50
Junction temperature
VFH – Tj
VFL (V)
IF = 700 mA
2.0
IF = 500 mA
1.8
1.6
IF = 300 mA
1.4
0
50
Junction temperature
100
Tj
2.2
IF = 700 mA
2.0
IF = 500 mA
1.8
1.6
IF = 300 mA
1.4
1.2
−50
150
(°C)
0
50
Junction temperature
ICC – VCC
7.0
(V)
(mA)
Tj =25°C
3.0
VREG
2.0
Regulator voltage
Tj =135°C
ICC
Tj
150
(°C)
Tj =−40°C
Tj =25°C
Tj =−40°C
14
100
VREG – VCC
4.0
Current dissipation
(°C)
VFL – Tj
FRD forward voltage
(V)
VFH
FRD forward voltage
2.2
1.0
12
Tj
150
2.4
2.4
1.2
−50
100
16
Control power supply voltage
6.5
6.0
5.5
5.0
12
18
VCC
Tj =135°C
(V)
IREG = 30 mA
14
16
Control power supply voltage
13
18
VCC
(V)
2012-02-09
TPD4146K
ton – Tj
toff – Tj
toff
(μs)
3.0
2.0
1.0
VBB = 280 V
VCC = 15 V
IC = 0.5 A
High-side
Low-side
0
−50
0
2.0
Output-off delay time
Output-on delay time
ton (μs)
3.0
50
Junction temperature
100
Tj
1.0
VBB = 280 V
VCC = 15 V
IC = 0.5 A
High-side
Low-side
0
−50
150
(°C)
0
Junction temperature
VS – Tj
Tj
150
(°C)
VCCUV – Tj
Under-voltage protection operating
voltage VCCUV (V)
PWM on-duty set-up voltage
VS (V)
100
12.5
6.0
VVS 100%
4.0
VVSW
2.0
VVS 0%
VCC = 15 V
0
−50
0
50
Junction temperature
100
Tj
VCCUVD
VCCUVR
12.0
11.5
11.0
10.5
10.0
−50
150
(°C)
0
VBSUV – Tj
100
Tj
150
(°C)
VR – Tj
1.0
VCC = 15 V
Current control operating voltage
VR (V)
VBSUVD
VBSUVR
11.0
10.5
10.0
9.5
9.0
−50
50
Junction temperature
11.5
Under-voltage protection operating
voltage VBSUV (V)
50
0
50
Junction temperature
100
Tj
0.8
0.6
0.4
0.2
0
−50
150
(°C)
0
50
Junction temperature
14
100
Tj
150
(°C)
2012-02-09
TPD4146K
IBS (ON) – VBS
IBS (OFF) – VBS
450
450
Tj =135°C
IBS (OFF)
350
250
150
50
12
14
Tj =−40°C
(μA)
Tj =25°C
Current dissipation
Current dissipation
IBS (ON)
(μA)
Tj =−40°C
16
18
Control power supply voltage
VBS
Tj =25°C
Tj =135°C
350
250
150
50
12
(V)
14
Control power supply voltage
VF (BSD) – Tj
(μJ)
Wton
0.8
0.7
Turn-on loss
VF (BSD) (V)
BSD forward voltage
IF = 700 μA
IF = 500 μA
0.6
IF = 300 μA
0
50
Junction temperature
100
Tj
50
IC = 300 mA
25
0
50
100
Tj
150
(°C)
DVIN(HA)– Tj
Width
Hall amplifier Hysteresis
DVIN(HA) (mV)
(μJ)
IC = 500 mA
60
IC = 700 mA
30
IC = 500 mA
20
10
IC = 300 mA
50
Junction temperature
75
Junction temperature
40
0
IC = 700 mA
(°C)
Wtoff – Tj
Wtoff
(V)
100
0
−50
150
50
Turn-off loss
VBS
Wton – Tj
0.9
0
−50
18
125
1.0
0.5
−50
16
100
Tj
50
40
30
20
10
−50
150
(°C)
0
50
Junction temperature
15
100
Tj
150
(°C)
2012-02-09
16
16 GND
○
15 RS
○
17 BSU
○
18 U
○
19 NC
○
20 IS1
○
21 V
○
22 BSV
○
23 VBB
○
24 BSW
○
25 W
○
26 IS2
○
1000 pF
14 VS
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
9 FG
○
8 FGC
○
7 HW○
6 HW+
○
5 HV○
4 HV+
○
3 HU○
2 HU+
○
1 GND
○
16 GND
○
15 RS
○
14 VS
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
9 FG
○
8 FGC
○
7 HW○
6 HW+
○
5 HV○
4 HV+
○
3 HU○
2 HU+
○
1 GND
○
17 BSU
○
18 U
○
19 NC
○
20 IS1
○
21 V
○
22 BSV
○
23 VBB
○
24 BSW
○
25 W
○
26 IS2
○
TPD4146K
Test Circuits
IGBT Saturation Voltage (U-phase low side)
0.5 A
VM
27
kΩ
2.5 V
HU+ = 5 V
HV+ = 0 V
HW+ = 5 V
VCC = 15 V
VS = 6.1 V
FRD Forward Voltage (U-phase low side)
0.5 A
VM
2012-02-09
17
1000 pF
27
kΩ
16 GND
○
15 RS
○
17 BSU
○
18 U
○
19 NC
○
20 IS1
○
21 V
○
22 BSV
○
23 VBB
○
24 BSW
○
25 W
○
26 IS2
○
1000 pF
14 VS
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
9 FG
○
8 FGC
○
7 HW○
6 HW+
○
5 HV○
4 HV+
○
3 HU○
2 HU+
○
1 GND
○
16 GND
○
15 RS
○
14 VS
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
9 FG
○
8 FGC
○
7 HW○
6 HW+
○
5 HV○
4 HV+
○
3 HU○
2 HU+
○
1 GND
○
17 BSU
○
18 U
○
19 NC
○
20 IS1
○
21 V
○
22 BSV
○
23 VBB
○
24 BSW
○
25 W
○
26 IS2
○
TPD4146K
VCC Current Dissipation
IM
27
kΩ
VCC = 15 V
Regulator Voltage
30
mA
VM
VCC = 15 V
2012-02-09
TPD4146K
Output ON/OFF Delay Time (U-phase low side)
IM
1000 pF
U = 280 V
17 BSU
○
16 GND
○
18 U
○
2.2 μF
15 RS
○
14 VS
○
19 NC
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
20 IS1
○
21 V
○
22 BSV
○
9 FG
○
8 FGC
○
7 HW○
23 VBB
○
6 HW+
○
5 HV○
24 BSW
○
4 HV+
○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
560 Ω
2.5 V
HU+ = PG
HV+ = 0V
HW+ = 0 V
VCC = 15 V
VS = 6.1 V
27
kΩ
90 %
Input (HV+)
10 %
90 %
10 %
IM
toff
ton
18
2012-02-09
TPD4146K
PWM ON-duty Setup Voltage (U-phase high side)
2 kΩ
1000 pF
17 BSU
○
VBB = 18 V
16 GND
○
18 U
○
27
kΩ
15 RS
○
14 VS
○
19 NC
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
20 IS1
○
21 V
○
22 BSV
○
VM
9 FG
○
FGC
7 HW○
23 VBB
○
6 HW+
○
5 HV○
24 BSW
○
4 HV+
○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
15 V
2.5 V
HU+ = 0V
HV+ = 5 V
HW+ = 0 V
VCC = 15 V
VS = 6.1 V → 0 V
0 V → 6.1 V
Note: Sweeps the VS pin voltage and monitors the U pin.
When output is turned off from on, the PWM = 0 %. When output is full on, the PWM = 100 %.
19
2012-02-09
TPD4146K
VCC Under voltage Protection Operating/Recovery Voltage (U-phase low side)
U = 18 V
VM
1000 pF
17 BSU
○
16 GND
○
18 U
○
14 VS
○
15 RS
○
19 NC
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
20 IS1
○
21 V
○
22 BSV
○
9 FG
○
7 HW○
8 FGC
○
23 VBB
○
6 HW+
○
5 HV○
24 BSW
○
4 HV+
○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
2 kΩ
2.5 V
HU+ = 5 V
HV+ = 0 V
HW+ = 5 V
VCC = 15 V → 6 V
6 V → 15 V
VS = 6.1 V
27
kΩ
Note: Sweeps the VCC pin voltage from 15 V and monitors the U pin voltage.
The VCC pin voltage when output is off defines the under-voltage protection operating voltage.
Also sweeps from 6 V to increase. The VCC pin voltage when output is on defines the under voltage
protection recovery voltage.
VBS Under-voltage Protection Operating/Recovery Voltage (U-phase high side)
VM
VBB = 18 V
BSU = 15 V → 6 V
6 V → 15 V
1000 pF
27
kΩ
17 BSU
○
16 GND
○
15 RS
○
18 U
○
14 VS
○
19 NC
○
13 RREF
○
12 OS
○
11 VCC
○
20 IS1
○
21 V
○
10 VREG
○
9 FG
○
22 BSV
○
8 FGC
○
7 HW○
23 VBB
○
6 HW+
○
24 BSW
○
4 HV+
○
5 HV○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
2 kΩ
2.5 V
HU+ = 0 V
HV+ = 5 V
HW+ = 0 V
VCC = 15 V
VS = 6.1 V
Note: Sweeps the BSU pin voltage from 15 V to decrease and monitors the VBB pin voltage. The BSU pin
voltage when output is off defines the under voltage protection operating voltage. Also sweeps the
BSU pin voltage from 6V to increase and change the HU pin voltage at 5V → 0V→ 5V each time. It
repeats similarly output is on. The BSU pin voltage when output is on defines the under voltage
protection recovery voltage.
20
2012-02-09
TPD4146K
Current Control Operating Voltage (U-phase high side)
IS/RS = 0 V → 0.6 V
2 kΩ
VBB = 18 V
VM
17 BSU
○
16 GND
○
18 U
○
14 VS
○
15 RS
○
19 NC
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
20 IS1
○
21 V
○
22 BSV
○
9 FG
○
8 FGC
○
7 HW○
23 VBB
○
6 HW+
○
5 HV○
24 BSW
○
4 HV+
○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
15 V
2.5 V
HU+ = 0 V
HV+ = 5 V
HW+ = 0 V
VCC = 15 V
VS = 6.1 V
27
kΩ
1000 pF
Note: Sweeps the IS/RS pin voltage and monitors the U pin voltage.
The IS/RS pin voltage when output is off defines the current control operating voltage.
VBS Current Dissipation (U-phase high side)
1000 pF
21
27
kΩ
17 BSU
○
BSU = 15 V
16 GND
○
15 RS
○
18 U
○
14 VS
○
19 NC
○
13 RREF
○
12 OS
○
20 IS1
○
11 VCC
○
10 VREG
○
9 FG
○
21 V
○
22 BSV
○
8 FGC
○
7 HW○
23 VBB
○
6 HW+
○
5 HV○
24 BSW
○
4 HV+
○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
IM
2.5 V
HU+ = 5 V/0 V
HV+ = 5 V
HW+ = 0 V
VCC = 15 V
VS = 6.1 V
2012-02-09
22
16 GND
○
15 RS
○
14 VS
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
9 FG
○
8 FGC
○
7 HW○
6 HW+
○
5 HV○
4 HV+
○
3 HU○
2 HU+
○
1 GND
○
17 BSU
○
18 U
○
19 NC
○
20 IS1
○
21 V
○
22 BSV
○
23 VBB
○
24 BSW
○
25 W
○
26 IS2
○
TPD4146K
BSD Forward Voltage (U-phase)
500 μA
VM
2012-02-09
TPD4146K
Turn-ON/OFF Loss (low side IGBT + high side FRD)
1000 pF
14 VS
○
27
kΩ
17 BSU
○
VBB/U = 280 V
16 GND
○
18 U
○
IM
L 5 mH
2.2 μF
15 RS
○
19 NC
○
13 RREF
○
12 OS
○
11 VCC
○
10 VREG
○
20 IS1
○
21 V
○
22 BSV
○
9 FG
○
8 FGC
○
7 HW○
23 VBB
○
6 HW+
○
5 HV○
24 BSW
○
4 HV+
○
25 W
○
3 HU○
2 HU+
○
1 GND
○
26 IS2
○
VM
2.5 V
HU+ = PG
HV+
= 0V
V
HW+ = 0 V
VCC = 15 V
VS = 6.1 V
Input (HV+)
IGBT (C-E voltage)
(U-GND)
Power supply current
Wton
Wtoff
23
2012-02-09
TPD4146K
Package Dimensions
HDIP26-P-1332-2.00
Unit: mm
Weight: 3.8 g (typ.)
24
2012-02-09
TPD4146K
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
25
2012-02-09