STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS(ON) (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V 20V TO-252 and TO-251 Package. 18A 45 @ VGS = 4.5V D D G D S G S STU SERIES TO-252AA(D-PAK) G STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Symbol Parameter Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V ID 18 A IDM 30 A Drain-Source Diode Forward Current IS 15 A Maximum Power Dissipation @Tc=25 C PD 50 W Operating and Storage Temperature Range TJ, TSTG -55 to 175 C Drain Current-Continuous a -Pulsed @TC=25 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC 3 C /W Thermal Resistance, Junction-to-Ambient R JA 50 C /W 1 S T U/D3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 12V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.2 1.8 V R DS (ON) V GS =10V, ID =6.0A 25 40 m-ohm Drain-S ource On-S tate R esistance V GS =4.5V, ID = 5.2A 30 45 m-ohm OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V 0.7 15 A 7 S 614 PF 151 PF 116 PF 14.3 ns 11.9 ns 22.1 ns 16.7 ns V DS =10V,ID =6A,V GS =10V 18.9 nC V DS =10V,ID =6A,V GS =4.5V 8.9 nC V DS =10V, ID = 6A, V GS =10V 2.1 nC 2.4 nC V DS = 10V, ID = 6.0A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GEN = 6 ohm 2 S T U/D3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 1 V GS = 0V, Is =10A VSD 1.3 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 10 -55 C I D , Drain C urrent (A) ID , Drain C urrent(A) 20 V G S =10,9,8,7,6,5,4,3V 8 6 V G S =2V 4 2 0 0 2 4 6 8 10 15 10 25 C 0 0.0 12 1000 1.8 750 C is s 500 C os s RDS(ON), On-Resistance (Normalized) 2.2 C rs s 0 4 8 12 16 20 1.8 1.2 2.4 3.0 3.6 F igure 2. Trans fer C haracteris tics 1250 0 0.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 250 T j=125 C 5 V DS , Drain-to-S ource Voltage (V ) C , C apacitance (pF ) 5 C Min Typ Max Unit Condition S ymbol 24 1.4 1.0 0.6 0.2 0 V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance V G S =10V I D =6A -50 -25 0 25 50 75 100 125 T j( C ) F igure 4. On-R es is tance Variation with Temperature 3 V V DS =V G S I D =250uA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 25 50 75 100 125 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 24 20 20 10 Is , S ource-drain current (A) gF S , T rans conductance (S ) -50 -25 V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage 1.8 16 12 8 4 0 V DS =10V 0 5 10 15 20 1 T J =25 C 0 0.4 25 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 10 V DS =10V I D =6A 8 I D , Drain C urrent (A) V th, Normalized G ate-S ource T hres hold V oltage S T U/D3055L2 6 4 2 0 2 4 6 8 10 12 14 16 ) Li m it 10 11 0.1 DC 0m ms s 1s V G S =4.5V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) (O N 10 0.03 0 R 10 DS 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D3055L2 V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U/D3055L2 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 6 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D3055L2 TO-252 Tape and Reel Data TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N W ψ97 ± 1.0 17.0 + 1.5 - 0 T H K S 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 7 G R V