IHP10T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • C Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Very low Vce(sat) Very soft, fast recovery anti-parallel EmCon™ HE diode Low EMI Qualified according to JEDEC1 for target applications Application specific optimisation of inverse diode Pb-free lead plating; RoHS compliant Type IHP10T120 G E PG-TO-220-3-1 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1200V 10A 1.7V 150°C H10T120 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 24 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 24 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax, Tc = 25°C IFpuls Diode surge non repetitive current, tp limited by Tjmax IFSM A 16 10 11 7 16.5 A TC = 25°C, tp = 10ms, sine halfwave 28 TC = 25°C, tp ≤ 2.5µs, sine halfwave 50 TC = 100°C, tp ≤ 2.5µs, sine halfwave 40 VGE ±20 V tSC 10 µs Power dissipation, TC = 25°C Ptot 138 W Operating junction temperature Tj -40...+150 °C Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Gate-emitter voltage Short circuit withstand time 2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.9 K/W RthJCD 2.6 RthJA 62 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case IGBT thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j = 25° C - 1.7 2.2 T j = 12 5° C - 2.0 - T j = 15 0° C - 2.2 - T j = 25° C - 1.65 2.15 T j = 15 0° C - 1.7 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 10A V G E = 0V, I F = 4A Gate-emitter threshold voltage VGE(th) I C = 0. 6mA, V C E = V G E Zero gate voltage collector current ICES V C E = 1200V , V G E = 0V mA T j = 25° C - - 0.2 T j = 15 0° C - - 2.0 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 10A - 10 - S Integrated gate resistor RGint Power Semiconductors none 2 Ω Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series Dynamic Characteristic Input capacitance Ciss V C E = 25V, - 606 - Output capacitance Coss V G E = 0V, - 48 - Reverse transfer capacitance Crss f= 1 M Hz - 29 - Gate charge QGate V C C = 9 60V, I C = 10A - 53 - nC - 13 - nH - 48 - A pF V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current 1) IC(SC) V G E = 1 5V,t S C ≤10µs V C C = 600V, T j = 25° C Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets - 45 - - 20 - - 520 - - 82 - T j = 25° C, V C C = 6 10V, I C = 10A, V G E = 0/ 15V, R G = 8 1Ω , L σ 2 ) = 180nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. - 0.68 - - 0.78 - - 1.46 - ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j = 25° C, - 115 Diode reverse recovery charge Qrr V R = 8 00V, I F = 4A, - 330 nC Diode peak reverse recovery current Irrm di F / dt = 75 0A / µs - 7.15 A 1) 2) ns Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 45 - - 24 - - 592 - - 177 - - 0.83 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 1.19 - Ets T j = 15 0° C, V C C = 6 10V, I C = 10A, V G E = 0 / 15V, R G = 81Ω L σ 1 ) = 180nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery. - 2.02 - Diode reverse recovery time trr T j = 15 0° C - 185 - ns Diode reverse recovery charge Qrr V R = 8 00V, I F = 4A, - 630 - nC Diode peak reverse recovery current Irrm di F / dt = 75 0A / µs - 8.1 - A mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series tp=2µs 15A T C =80°C 10A T C =110°C Ic 5A Ic 0A 100Hz 10µs 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 20A 50µs 1A 200µs 500µs 2ms DC 0,1A 1kHz 10kH z 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 25A 140W 120W 100W IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 20A 80W 60W 40W 15A 10A 5A 20W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) 5 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series 20A VGE=17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 20A 15V 15A 13V 11V 9V 10A 7V 5A 0A 1V 2V 3V 4V 5V 13V 11V 9V 10A 7V 5A 6V 0V 20A 15A 10A 5A TJ=150°C 25°C 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 15A 0A 0V 0A VGE=17V 3,0V IC=15A 2,5V 2,0V IC=8A 1,5V IC=5A IC=2.5A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series 100ns td(off) tf tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) td(on) 10ns tr 1ns 5A 10A VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns tf td(on) tr 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81Ω, Dynamic test circuit in Figure E) Power Semiconductors 10 ns tr 5Ω 50Ω 100Ω 150Ω 200Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E) td(off) 0°C td(on) 1 ns 15A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=81Ω, Dynamic test circuit in Figure E) 10ns 100 ns 7 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series 6,0mJ 4,0mJ Eon* 2,0mJ Eoff *) Eon and Ets include losses due to diode recovery 3,2 mJ Ets* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery Ets* 2,8 mJ 2,4 mJ 2,0 mJ Eoff 1,6 mJ Eon* 1,2 mJ 0,8 mJ 0,4 mJ 0,0mJ 5A 10A 0,0 mJ 15A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=81Ω, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 1,5mJ E off E on* 1,0mJ 0,5mJ 100Ω 150Ω 200Ω *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 2,0mJ 50Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E) E ts* 2,5mJ 5Ω 3mJ 2mJ Ets* 1mJ Eoff Eon* 0,0mJ 50°C 100°C 0mJ 400V 150°C 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81Ω, Dynamic test circuit in Figure E) Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=8A, RG=81Ω, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series Ciss 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF 960V 10V 100pF Coss 5V Crss 0V 0nC 25nC 10pF 0V 50nC IC(sc), short circuit COLLECTOR CURRENT 15µs 10µs 5µs 0µs 12V 14V 75A 50A 25A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME QGE, GATE CHARGE Figure 17. Typical gate charge (IC=8 A) 10V 9 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj ≤ 150°C) Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series 0 D=0.5 D=0.5 ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 10 K/W 0.2 R,(K/W) 0.1759 0.3291 0.2886 0.1189 0.1 -1 10 K/W τ, (s) -2 8.688*10 -2 1.708*10 -3 1.259*10 -4 1.898*10 R1 0.05 R2 0.02 C1=τ1/R1 0.01 C2=τ2/R2 single pulse -2 10 K/W 10µs 100µs 1ms 0 10 K/W 0.2 0.1 10 K/W τ, (s) -2 4.529*10 -3 6.595*10 -3 1.003*10 -5 9.423*10 R,(K/W) 0.500 0.578 1.036 0.4046 0.05 -1 0.02 R1 0.01 single pulse R2 C1=τ1/R1 C2=τ2/R2 -2 10ms 10 K/W 10µs 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance as a function of pulse width (D = tp / T) 100µs 1ms 10ms 100ms 1 tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) 850nC 500ns I F =8A 800nC I F =8A 400ns 350ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 450ns 4A 2A 300ns 250ns 200ns 150ns 100ns 50ns 0A/µs 400A/µs 800A/µs 1200A/µ diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) Power Semiconductors 10 750nC 700nC 650nC 600nC 4A 550nC 500nC 450nC 400nC 0A/µs 2A 400A/µs 800A/µs 1200A/ diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, TJ = 125°C, Dynamic test circuit in Figure E) Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series 20 I F =8A 15 S, SOFTNESSFACTOR 10 I F =8A 4A 8 2A 6 4A 2A 10 5 Irr, REVERSE RECOVERY CURRENT 12 4 0A/µs 400A/µs 800A/µs 0 0A/µs 1200A/µ diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=800V, TJ = 125°C, Dynamic test circuit in Figure E) 400A/µs 800A/µs 1200A diF/dt, DIODE CURRENT SLOPE Figure 26. Typical reverse recovery softness factor as a function of diode current slope (VR=800V, TJ = 125°C, Dynamic test circuit in Figure E) 2,4V I F =8A 12A T J =25°C 4A 10A 150°C VF, FORWARD VOLTAGE IF, FORWARD CURRENT 2,0V 8A 6A 4A 2A 1,6V 2A 1,2V 0,8V 0,4V 0A 0,0V 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors -50°C 0°C 50°C 100°C 150°C 3V 11 TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series PG-TO220-3-1 Power Semiconductors 12 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tr r tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 13 Rev. 2.4 Sept. 07 IHP10T120 Soft Switching Series Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/24/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.4 Sept. 07