INFINEON IHP10T120_07

IHP10T120
Soft Switching Series
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
•
•
•
•
•
•
•
•
C
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
- Very low Vce(sat)
Very soft, fast recovery anti-parallel EmCon™ HE diode
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
Type
IHP10T120
G
E
PG-TO-220-3-1
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
1200V
10A
1.7V
150°C
H10T120
PG-TO-220-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
IC
Pulsed collector current, tp limited by Tjmax
ICpuls
24
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
-
24
Diode forward current
TC = 25°C
TC = 100°C
IF
Diode pulsed current, tp limited by Tjmax, Tc = 25°C
IFpuls
Diode surge non repetitive current, tp limited by Tjmax
IFSM
A
16
10
11
7
16.5
A
TC = 25°C, tp = 10ms, sine halfwave
28
TC = 25°C, tp ≤ 2.5µs, sine halfwave
50
TC = 100°C, tp ≤ 2.5µs, sine halfwave
40
VGE
±20
V
tSC
10
µs
Power dissipation, TC = 25°C
Ptot
138
W
Operating junction temperature
Tj
-40...+150
°C
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Gate-emitter voltage
Short circuit withstand time
2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
1
2)
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.9
K/W
RthJCD
2.6
RthJA
62
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
IGBT thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
1200
-
-
T j = 25° C
-
1.7
2.2
T j = 12 5° C
-
2.0
-
T j = 15 0° C
-
2.2
-
T j = 25° C
-
1.65
2.15
T j = 15 0° C
-
1.7
-
5.0
5.8
6.5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V, I C = 0. 5mA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15V, I C = 10A
V G E = 0V, I F = 4A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 6mA, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 1200V ,
V G E = 0V
mA
T j = 25° C
-
-
0.2
T j = 15 0° C
-
-
2.0
Gate-emitter leakage current
IGES
V C E = 0V ,V G E = 2 0V
-
-
100
nA
Transconductance
gfs
V C E = 20V, I C = 10A
-
10
-
S
Integrated gate resistor
RGint
Power Semiconductors
none
2
Ω
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25V,
-
606
-
Output capacitance
Coss
V G E = 0V,
-
48
-
Reverse transfer capacitance
Crss
f= 1 M Hz
-
29
-
Gate charge
QGate
V C C = 9 60V, I C = 10A
-
53
-
nC
-
13
-
nH
-
48
-
A
pF
V G E = 1 5V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
IC(SC)
V G E = 1 5V,t S C ≤10µs
V C C = 600V,
T j = 25° C
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
-
45
-
-
20
-
-
520
-
-
82
-
T j = 25° C,
V C C = 6 10V, I C = 10A,
V G E = 0/ 15V,
R G = 8 1Ω ,
L σ 2 ) = 180nH,
C σ 2 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.68
-
-
0.78
-
-
1.46
-
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j = 25° C,
-
115
Diode reverse recovery charge
Qrr
V R = 8 00V, I F = 4A,
-
330
nC
Diode peak reverse recovery current
Irrm
di F / dt = 75 0A / µs
-
7.15
A
1)
2)
ns
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
45
-
-
24
-
-
592
-
-
177
-
-
0.83
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
-
1.19
-
Ets
T j = 15 0° C,
V C C = 6 10V, I C = 10A,
V G E = 0 / 15V,
R G = 81Ω
L σ 1 ) = 180nH,
C σ 1 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
2.02
-
Diode reverse recovery time
trr
T j = 15 0° C
-
185
-
ns
Diode reverse recovery charge
Qrr
V R = 8 00V, I F = 4A,
-
630
-
nC
Diode peak reverse recovery current
Irrm
di F / dt = 75 0A / µs
-
8.1
-
A
mJ
Anti-Parallel Diode Characteristic
1)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
4
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
tp=2µs
15A
T C =80°C
10A
T C =110°C
Ic
5A
Ic
0A
100Hz
10µs
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
20A
50µs
1A
200µs
500µs
2ms
DC
0,1A
1kHz
10kH z
100kHz
1V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 81Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
25A
140W
120W
100W
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
20A
80W
60W
40W
15A
10A
5A
20W
0W
25°C
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
5
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
20A
VGE=17V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
20A
15V
15A
13V
11V
9V
10A
7V
5A
0A
1V
2V
3V
4V
5V
13V
11V
9V
10A
7V
5A
6V
0V
20A
15A
10A
5A
TJ=150°C
25°C
0V
2V
4V
6V
8V
10V
12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
15V
15A
0A
0V
0A
VGE=17V
3,0V
IC=15A
2,5V
2,0V
IC=8A
1,5V
IC=5A
IC=2.5A
1,0V
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
6
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
100ns
td(off)
tf
tf
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
td(on)
10ns
tr
1ns
5A
10A
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
100ns
tf
td(on)
tr
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
10 ns
tr
5Ω
50Ω
100Ω
150Ω
200Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
td(off)
0°C
td(on)
1 ns
15A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
10ns
100 ns
7
7V
6V
max.
5V
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
6,0mJ
4,0mJ
Eon*
2,0mJ
Eoff
*) Eon and Ets include losses
due to diode recovery
3,2 mJ
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) Eon and Etsinclude losses
due to diode recovery
Ets*
2,8 mJ
2,4 mJ
2,0 mJ
Eoff
1,6 mJ
Eon*
1,2 mJ
0,8 mJ
0,4 mJ
0,0mJ
5A
10A
0,0 mJ
15A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
due to diode recovery
1,5mJ
E off
E on*
1,0mJ
0,5mJ
100Ω
150Ω
200Ω
*) Eon and Ets include losses
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2,0mJ
50Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
E ts*
2,5mJ
5Ω
3mJ
2mJ
Ets*
1mJ Eoff
Eon*
0,0mJ
50°C
100°C
0mJ
400V
150°C
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load, TJ=150°C, VGE=0/15V, IC=8A,
RG=81Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
Ciss
15V
240V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
1nF
960V
10V
100pF
Coss
5V
Crss
0V
0nC
25nC
10pF 0V
50nC
IC(sc), short circuit COLLECTOR CURRENT
15µs
10µs
5µs
0µs
12V
14V
75A
50A
25A
0A
16V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Power Semiconductors
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC,
SHORT CIRCUIT WITHSTAND TIME
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=8 A)
10V
9
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter
voltage
(VCE ≤ 600V, Tj ≤ 150°C)
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
0
D=0.5
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0.2
R,(K/W)
0.1759
0.3291
0.2886
0.1189
0.1
-1
10 K/W
τ, (s)
-2
8.688*10
-2
1.708*10
-3
1.259*10
-4
1.898*10
R1
0.05
R2
0.02
C1=τ1/R1
0.01
C2=τ2/R2
single pulse
-2
10 K/W
10µs
100µs
1ms
0
10 K/W
0.2
0.1
10 K/W
τ, (s)
-2
4.529*10
-3
6.595*10
-3
1.003*10
-5
9.423*10
R,(K/W)
0.500
0.578
1.036
0.4046
0.05
-1
0.02
R1
0.01
single pulse
R2
C1=τ1/R1
C2=τ2/R2
-2
10ms
10 K/W
10µs
100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal
resistance as a function of pulse width
(D = tp / T)
100µs
1ms
10ms
100ms
1
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
850nC
500ns
I F =8A
800nC I F =8A
400ns
350ns
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
450ns
4A
2A
300ns
250ns
200ns
150ns
100ns
50ns
0A/µs
400A/µs
800A/µs
1200A/µ
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
Power Semiconductors
10
750nC
700nC
650nC
600nC
4A
550nC
500nC
450nC
400nC
0A/µs
2A
400A/µs
800A/µs
1200A/
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(VR=800V, TJ = 125°C,
Dynamic test circuit in Figure E)
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
20
I F =8A
15
S, SOFTNESSFACTOR
10
I F =8A
4A
8
2A
6
4A
2A
10
5
Irr,
REVERSE RECOVERY CURRENT
12
4
0A/µs
400A/µs
800A/µs
0
0A/µs
1200A/µ
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR=800V, TJ = 125°C,
Dynamic test circuit in Figure E)
400A/µs
800A/µs
1200A
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical reverse recovery
softness factor as a function of diode
current slope
(VR=800V, TJ = 125°C,
Dynamic test circuit in Figure E)
2,4V
I F =8A
12A
T J =25°C
4A
10A
150°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
2,0V
8A
6A
4A
2A
1,6V
2A
1,2V
0,8V
0,4V
0A
0,0V
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
Power Semiconductors
-50°C
0°C
50°C
100°C
150°C
3V
11
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage
as a function of junction temperature
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
PG-TO220-3-1
Power Semiconductors
12
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tr r
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
and Stray capacity C σ =39pF.
Figure B. Definition of switching losses
Power Semiconductors
13
Rev. 2.4 Sept. 07
IHP10T120
Soft Switching Series
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/24/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
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and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2.4 Sept. 07