MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating 1 16 15 Symbol Value Unit 2 3 14 VCEO 40 Vdc 4 13 5 12 VCB 75 Vdc 6 11 7 10 8 9 Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage VEB Collector Current − Continuous IC 5.0 Vdc 500 mAdc Four Transistors Equal Power Total Power Dissipation @ TA = 25°C Derate above 25°C PD Total Power Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg Watts 1.0 8.0 mW/°C Watts 2.4 19.2 mW/°C −55 to +150 °C SO−16 CASE 751B STYLE 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM MMPQ2222A AWLYWW MMPQ2222A ic Device Code A sembly Location WL Lot Y WW Week = Specif= As= Wafer = Year = Work ORDERING INFORMATION Device Package Shipping MMPQ2222A SO−16 48 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: MMPQ2222A/D MMPQ2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 − − Vdc Emitter −Base Breakdown Voltage (IB = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − − − − Vdc − − − − 50 10 − − 100 35 50 75 100 40 50 − − − − − − − − − 300 − − − − − − 0.3 1.0 − − − − 1.2 2.0 fT 200 350 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 4.5 − pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 17 − pF Turn−On Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ton − 25 − ns Turn−Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) toff − 250 − ns Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 100 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) hFE Collector −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Current −Gain − Bandwidth Product (Note 1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MMPQ2222A SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% +16 V 0 −2 V 200 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% +16 V 0 1 kΩ < 2 ns 1k −14 V CS* < 10 pF 200 < 20 ns CS* < 10 pF 1N914 −4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 −55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 3 3.0 5.0 10 20 30 50 MMPQ2222A 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts − 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn −On Time IC = 1.0 mA, RS = 150 Ω 500 μA, RS = 200 Ω 100 μA, RS = 2.0 kΩ 50 μA, RS = 4.0 kΩ 8.0 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 IC = 50 μA 100 μA 500 μA 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 300 Figure 6. Turn −Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current−Gain Bandwidth Product http://onsemi.com 4 MMPQ2222A 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) −0.5 −1.0 −1.5 RqVB for VBE −2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) −2.5 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 500 MMPQ2222A PACKAGE DIMENSIONS SO−16 CASE 751B−05 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 16 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K DIM A B C D F G J K M P R F X 45 _ C −T− SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S SOLDERING FOOTPRINT 0.060 1.52 0.275 7.0 MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 0.155 4.0 0.024 0.6 0.050 1.270 inches mm ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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