TK10P60W MOSFETs Silicon N-Channel MOS (DTMOS) 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 9.7 Drain current (pulsed) (Note 1) IDP 38.8 PD 80 W (Note 2) EAS 121 mJ IAR 2.5 A Reverse drain current (DC) (Note 1) IDR 9.7 Reverse drain current (pulsed) (Note 1) Power dissipation Single-pulse avalanche energy (Tc = 25) Avalanche current IDRP 38.8 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: 1/9 A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. www.freescale.net.cn 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Max Unit Rth(ch-c) 1.57 /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A Note: 2/9 This transistor is sensitive to electrostatic discharge and should be handled with care. www.freescale.net.cn 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V Min Typ. Max Unit ±1 µA 10 ID = 10 mA, VGS = 0 V 600 VDS = 10 V, ID = 0.5 mA 2.7 3.7 VGS = 10 V, ID = 4.9 A 0.327 0.43 Ω Min Typ. Max Unit 700 pF V unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Input capacitance Symbol Ciss Test Condition VDS = 300 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss 2.3 Output capacitance Coss 20 Effective output capacitance Co(er) VDS = 0 to 400 V, VGS = 0 V 35 rg VDS = OPEN, f = 1 MHz 7.5 Ω Switching time (rise time) tr See Figure 6.2.1 22 ns Switching time (turn-on time) ton 45 tf 5.5 toff 75 50 V/ns Min Typ. Max Unit 20 nC Gate resistance Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness dv/dt VDD = 0 to 400 V, ID = 4.9 A Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 6.3. Gate Charge Characteristics (Ta = 25 25 Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 9.7 A Gate-source charge 1 Qgs1 4.5 Gate-drain charge Qgd 9.5 unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Symbol Test Condition Min Typ. Max Unit Diode forward voltage VDSF IDR = 9.7 A, VGS = 0 V -1.7 V Reverse recovery time trr 250 ns Reverse recovery charge Qrr IDR = 4.9 A, VGS = 0 V -dIDR/dt = 100 A/µs 2.2 µC Peak reverse recovery current Irr 19 A 15 V/ns Diode dv/dt ruggedness 3/9 dv/dt IDR = 4.9 A, VGS = 0 V, VDD = 400 V www.freescale.net.cn 7. Marking Fig. 7.1 Marking 4/9 www.freescale.net.cn 8. Characteristics Curves (Note) 5/9 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 VDSS - Ta Fig. 8.6 RDS(ON) - ID www.freescale.net.cn 6/9 Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 EOSS - VDS Fig. 8.11 Vth - Ta Fig. 8.12 Dynamic Input/Output Characteristics www.freescale.net.cn Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.15 PD - Tc (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform 7/9 www.freescale.net.cn Fig. 8.17 Safe Operating Area (Guaranteed Maximum) Note: 8/9 The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. www.freescale.net.cn Package Dimensions Unit: mm 9/9 www.freescale.net.cn