EMZ8 Power Management (Dual Transistors) SOT-563 1 Features 1.600 Both a 2SA2018 chip and 2SC2412K chip in a package. External circuit 1.200 1.600 0.220 0.500 0.565 MARKING:Z8 Dimensions in inches and (millimeters) Absolute maximum ratings(Ta=25℃) Symbol Value Parameter Tr1 Units Tr2 VCBO Collector-Base Voltage -15 60 V VCEO Collector-Emitter Voltage -12 50 V VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Tstg Junction Temperature Storage Temperature -6 7 V -150 150 mA 150(TOTAL) mW 150 ℃ ℃ -55-+150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Tr1 Parameter Symbol unless Test otherwise conditions IC= -10μA, IE=0 specified) MIN TYP MAX -15 UNIT V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-15V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -6V, IC=0 -0.1 μA DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance hFE VCEsat fT Cob VCE=-2V, IC= -10mA 270 680 IC= -200mA, IB= -10mA -0.25 VCE=-2V, IC= -10mA, V 260 MHz 6.5 pF f=100MHz VCB=-10V, IE=0,f=1MHz Tr2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA,f=100MHz 180 VCB=12V,IE=0,f=1MHz 2.0 V MHz 3.5 pF EMZ8 Power Management (Dual Transistors) Typical TR1 Characteristics EMZ8 Power Management (Dual Transistors) TR2