P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 20/25/35ns (Military) Standard Pinout (JEDEC Approved) – 24-Pin 300 mil DIP – 24-Pin 300 mil SOIC – 24-Pin 300 mil SOJ – 24-Pin Solder Seal Flat Pack – 28-Pin LCC (450 mil x 450 mil) Low Power Operation Single 5V ± 10%Power Supply Separate Inputs and Outputs – P4C1681 Input Data at Outputs during Write – P4C1682 Outputs in High Z during Write DESCRIPTION The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra high speed static RAMs similar to the P4C168, but with separate data I/O pins. The P4C1681 features a transparent write operation; the outputs of the P4C1682 are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. . CMOS is used to reduce power consumption. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS The P4C1681 and P4C1682 are available in 24-pin 300 mil DIP, SOIC, Solder Seal Flatpack, and SOJ packages, as well as a 28-pin LCC package, providing excellent board level densities. DIP (P4,C4), SOIC (S4), SOJ (J4) SOLDER SEAL FLAT PACK (FS-1) LCC (L5-1) Document # SRAM109 REV A 1 Revised October 2005 P4C1681, P4C1682 MAXIMUM RATINGS1 Symbol Parameter Value Unit VCC Power Supply Pin with Respect to GND –0.5 to +7 V VTERM Terminal Voltage with Respect to GND (up to 7.0V) –0.5 to VCC +0.5 V TA Operating Temperature –55 to +125 °C RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) Ambient Temperature Symbol Parameter Value Unit TBIAS Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1.0 W IOUT DC Output Current 50 mA CAPACITANCES(4) VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol Parameter Conditions Typ. Unit GND VCC 0V 0V 5.0V ± 10% CIN Input Capacitance VIN = 0V 5 pF 5.0V ± 10% COUT Output Capacitance VOUT = 0V 7 pF Military –55°C to +125°C 0°C to +70°C Commercial DC ELECTRICAL CHARACTERISTICS Over Recommended operating temperature and supply voltages(2) Sym. Parameter P4C1681 P4C1682 Min Max Test Conditions VIH Input High Voltage 2.2 VIL Input Low Voltage –0.5 VHC CMOS Input High Voltage VLC CMOS Input Low Voltage VCD Input Clamp Diode Voltage VOL (3) Unit VCC +0.5 V 0.8 V VCC –0.2 VCC +0.5 V 0.2 V VCC = Min., IIN = –18 mA –1.2 V Output Low Voltage (TTL Load) IOL = +8 mA, VCC = Min. 0.4 V VOLC Output Low Voltage (CMOS Load) IOLC = +100 µA, VCC = Min. 0.2 V VOH Output High Voltage (TTL Load) IOH = –4 mA, VCC = Min. VOHC Output High Voltage (CMOS Load) IOHC = –100 µA, VCC = Min. ILI Input Leakage Current VCC = Max. VIN = GND to VCC Mil. Comm'l ILO Output Leakage Current VCC = Max. CE = VIH VOUT = GND to VCC Mil. Comm'l –0.5(3) Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. Document # SRAM109 REV A 2.4 V VCC –0.2 V –10 –5 –10 –5 +10 +5 µA µA +10 +5 µA µA 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. Page 2 of 10 P4C1681, P4C1682 POWER DISSIPATION CHARACTERISTICS Over recommended operating temperature and supply voltage(2) Symbol Parameter Test Conditions P4C1681 P4C1682 Min Max Unit ICC Dynamic Operating Current – 12, 15 VCC = Max., f = Max., Outputs Open Comm'l — 130 mA ICC Dynamic Operating Current – 20, 25, 35 VCC = Max., f = Max., Outputs Open Mil. Comm'l — — 130 100 mA mA ISB Standby Power Supply Current (TTL Input Levels) CE ≥ VIH, VCC = Max., f = Max., Outputs Open — 35 mA ISB1 Standby Power Supply Current (CMOS Input Levels) CE ≥ VHC, VCC = Max., f = 0, Outputs Open, VIN ≤ VLC or VIN ≥ VHC — 15 mA Document # SRAM109 REV A Page 3 of 10 P4C1681, P4C1682 AC ELECTRICAL CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Symbol Parameter -12 -15 Min Max -20 -25 Min Max Min Max Min 12 15 Max Min Max Read Cycle Time tAA Address Access Time 12 15 20 25 35 ns tAC Chip Enable Access Time 12 15 20 25 35 ns t OH Output Hold from Address Change 2 2 3 3 3 ns tLZ Chip Enable to Output in Low Z 2 2 3 3 3 ns t HZ Chip Disable to Output in High Z t RCS Read Command Setup Time 0 0 0 0 0 ns t RCH Read Command Hold Time 0 0 0 0 0 ns tPU Chip Enable to Power Up Time 0 0 0 0 0 ns tPD Chip Disable to Power Down Time 7 12 15 25 9 20 35 Unit t RC 6 20 -35 10 25 ns 15 25 ns ns 1552 Tbl 10 READ CYCLE NO. 1 (ADDRESS controlled)(5, 6) READ CYCLE NO. 2 (CE CE controlled)(5, 7) Notes: 5. WE is HIGH for READ cycle. 6. CE is LOW for READ cycle. 7. ADDRESS must be valid prior to, or coincident with, CE transition LOW. Document # SRAM109 REV A 8. Transition is measured ±200mV from steady state voltage prior to change, with loading as specified in Figure 1. 9. Read Cycle Time is measured from the last valid address to the first transitioning address. Page 4 of 10 P4C1681, P4C1682 AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Symbol † £ Parameter -12 -15 -20 -25 Min Max Min Max Min Max Min -35 Max Min Max Unit tWC Write Cycle Time 12 15 18 20 30 ns tCW Chip Enable Time to End of Write 12 15 18 20 25 ns tAW Address Valid to End of Write 12 15 18 20 25 ns tAS Address Set-up Time 0 0 0 0 0 ns tWP Write Pulse Width 12 15 18 20 25 ns tAH Address Hold Time 0 0 0 0 0 ns tDW Data Valid to End of Write 7 8 10 10 15 ns tDH Data Hold Time 0 0 0 0 0 ns tWZ Write Enable to Output in High Z† tOW Output Active to End of Write tAWE Write Enable to Data-out Valid£ 12 15 20 25 30 ns tADV Data-in Valid to Data-out Valid 12 15 20 25 30 ns 4 0 5 0 7 0 7 0 13 0 ns ns P4C1682 only. P4C1681 only. WE controlled)(10) WRITE CYCLE NO. 1 (WE Notes: 10. CE and WE must be LOW for WRITE cycle. 11. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. Document # SRAM109 REV A 12. Write Cycle Time is measured from the last valid address to the first transitioning address. Page 5 of 10 P4C1681, P4C1682 ORDERING INFORMATION SELECTION GUIDE The P4C1681 and P4C1682 are available in the following temperature, speed and package options. Temperature Range Commercial Temperature Military Temperature Military Processed* Package Speed 12 15 20 25 35 Plastic DIP -12PC -15PC -20PC -25PC N/A Plastic SOIC -12SC -15SC -20SC -25SC N/A Plastic SOJ -12JC -15JC -20JC -25JC N/A Side Brazed DIP N/A N/A -20CM -25CM -35CM Solder Seal Flatpack N/A N/A -20FSM -25FSM -35FSM LCC N/A N/A -20LM -25LM -35LM Side Brazed DIP N/A N/A -20CMB -25CMB -35CMB Solder Seal Flatpack N/A N/A -20FSMB -25FSMB -35FSMB LCC N/A N/A -20LMB -25LMB -35LMB * Military temperature range with MIL-STD-883 Revision D, Class B processing. N/A = Not available Document # SRAM109 REV A Page 6 of 10 P4C1681, P4C1682 Pkg # # Pins Symbol A b b2 C D E eA e L Q S1 S2 Pkg # # Pins Symbol A b b1 c c1 D E E1 E2 E3 e k L Q S1 M N C4 SIDE BRAZED DUAL IN-LINE PACKAGE 24 (300 mil) Min Max 0.200 0.014 0.026 0.045 0.065 0.008 0.018 1.280 0.220 0.310 0.300 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 0.005 - FS-1 SOLDER SEAL FLAT PACK 24 Min Max 0.045 0.115 0.015 0.022 0.015 0.019 0.004 0.009 0.004 0.006 0.640 0.350 0.420 0.450 0.180 0.030 0.050 BSC 0.008 0.015 0.250 0.370 0.026 0.045 0.000 0.0015 24 Document # SRAM109 REV A Page 7 of 10 P4C1681, P4C1682 Pkg # # Pins Symbol A A1 b C D e E E1 E2 Q Pkg # # Pins Symbol A A1 B1 D/E D1/E1 D2/E2 D3/E3 e h j L L1 L2 ND NE J4 SOJ SMALL OUTLINE IC PACKAGE 24 (300 mil) Min Max 0.128 0.148 0.082 0.016 0.020 0.007 0.010 0.620 0.630 0.050 BSC 0.335 BSC 0.292 0.300 0.267 BSC 0.025 - L5-1 SQUARE LEADLESS CHIP CARRIER 28 Min Max 0.060 0.075 0.050 0.065 0.022 0.028 0.442 0.460 0.300 BSC 0.150 BSC 0.460 0.050 BSC 0.040 REF 0.020 REF 0.045 0.055 0.045 0.055 0.075 0.095 7 7 Document # SRAM109 REV A Page 8 of 10 P4C1681, P4C1682 Pkg # # Pins Symbol A A1 b b2 C D E1 E e eB L α Pkg # # Pins Symbol A A1 b2 C D e E H h L α P4 PLASTIC DUAL IN-LINE PACKAGE 24 (300 Mil) Min Max 0.210 0.015 0.014 0.022 0.045 0.070 0.008 0.014 1.230 1.280 0.240 0.280 0.300 0.325 0.100 BSC 0.430 0.115 0.150 0° 15° S4 SOIC/SOP SMALL OUTLINE IC PACKAGE 24 (300 Mil) Min Max 0.093 0.104 0.004 0.012 0.013 0.020 0.009 0.012 0.598 0.614 0.050 BSC 0.291 0.299 0.394 0.419 0.010 0.029 0.016 0.050 0° 8° Document # SRAM109 REV A Page 9 of 10 P4C1681, P4C1682 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM109 P4C1681 / P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid Document # SRAM109 REV A DESCRIPTION OF CHANGE Page 10 of 10