CAS300M17BM2

CAS300M17BM2
1.7kV, 8.0 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec® Diode
1.7 kV
RDS(on)
8.0 mΩ
Esw, Total @ 300A, 150 ˚C
Features
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•
•
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VDS
Package 23.7 mJ
62mm x 106mm x 30mm
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Ease of Paralleling
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
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•
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•
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Enables Compact and Lightweight Systems
High Efficiency Operation
Mitigates Over-voltage Protection
Reduced Thermal Requirements
Reduced System Cost
Applications
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HF Resonant Converters/Inverters
Solar and Wind Inverters
UPS and SMPS
Motor Drive
Traction
Part Number
Package
Marking
CAS300M17BM2
Half-Bridge Module
CAS300M17BM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
BM2,Rev. -
Value
Unit
Test Conditions
VDSmax
Drain - Source Voltage
1.7
kV
VGSmax
Gate - Source Voltage
-10/+25
V
Absolute maximum values
VGSop
Gate - Source Voltage
-5/20
V
Recommended operational values
ID
S300M17
Datasheet: CA
Parameter
ID(pulse)
Continuous MOSFET Drain Current
Pulsed Drain Current
325
225
900
A
A
556
IF
TJmax
TC ,TSTG
Continuous Diode Forward Current
353
A
Junction Temperature
-40 to +150
˚C
Case and Storage Temperature Range
-40 to +125
˚C
VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
Notes
Fig. 26
Pulse width tp limited by TJ(max)
VGS = -5 V, TC = 25 ˚C
VGS = -5 V, TC = 90 ˚C
Visol
Case Isolation Voltage
4.5
kV
AC, 50 Hz , 1 min
LStray
Stray Inductance
15
nH
Measured between terminals 2 and 3
PD
Power Dissipation
1760
W
TC = 25 ˚C, TJ = 150 ˚C
Subject to change without notice.
www.cree.com
Fig. 27
Fig. 25
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain - Source Breakdown Voltage
1.7
VGS(th)
Gate Threshold Voltage
1.8
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
On State Resistance
Typ.
Max.
Unit
Test Conditions
kV
VGS, = 0 V, ID = 1 mA
V
VDS = 10 V, ID = 15 mA
500
2.3
1000
μA
VDS = 1.7 kV, VGS = 0V
1500
3000
μA
VDS = 1.7 kV,VGS = 0V, TJ = 150 ˚C
1
600
nA
VGS = 20 V, VDS = 0V
8.0
10
16.2
20
mΩ
95
VGS = 20V, IDS = 225 A,TJ = 150 ˚C
VDS = 20 V, IDS = 225 A
Fig. 7
Fig. 4,
5, 6
gfs
Transconductance
Ciss
Input Capacitance
20
Coss
Output Capacitance
2.5
Crss
Reverse Transfer Capacitance
0.08
Eon
Turn-On Switching Energy 13.0
mJ
EOff
Turn-Off Switching Energy 10.0
mJ
Internal Gate Resistance
3.7
Ω
f = 1 MHz, VAC = 25 mV
QGS
Gate-Source Charge
273
QGD
Gate-Drain Charge
324
nC
Fig. 15
QG
Total Gate Charge
1076
VDD= 900 V, VGS = -5V/+20V,
ID= 300 A, Per JEDEC24 pg 27
td(on)
Turn-on delay time
105
ns
72
ns
211
ns
Fig. 24
56
ns
VDD = 900V, VGS = -5/+20V,
ID = 300 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Note: IEC 60747-8-4, pg 83
Inductive load
IF = 300 A, VGS = 0
Fig. 10
IF = 300 A, VGS = 0 , TJ = 150 ˚C
Fig. 11
RG (int)
tr
td(off)
tf
VSD
QC
S
VGS = 20 V, IDS = 225 A
Note
82
Rise Time
Turn-off delay time
Fall Time
Diode Forward Voltage
Total Capacitive Charge
nF
1.7
2.0
2.2
2.5
4.4
V
μC
VDS = 20 V, ID = 225 A, TJ = 150 ˚C
Fig. 8
VDS = 1 kV, f = 200 kHz,
VAC = 25 mV
Fig.
16, 17
VDD = 900 V, VGS = -5V/+20V
ID = 300 A, RG(ext) = 2.5 Ω
Load = 77 μH, TJ = 150 ˚C
Note: IEC 60747-8-4 Definitions
Fig. 19
ISD = 300 A, VDS = 900 V, TJ =
25°C, diSD/dt = 9 kA/μs, VGS = -5 V
Thermal Characteristics
Symbol
Parameter
Min.
Typ.
Max.
RthJCM
Thermal Resistance Juction-to-Case for MOSFET
0.067
0.071
RthJCD
Thermal Resistance Juction-to-Case for Diode
0.060
0.065
Unit
Test Conditions
Fig. 27
˚C/W
Fig. 28
Additional Module Data
Symbol
Parameter
Unit
300
g
Test Condtion
W
Weight
M
Mounting Torque
5
Nm
To heatsink and terminals
Clearance Distance
9
mm
Terminal to terminal
30
mm
Terminal to terminal
40
mm
Terminal to baseplate
Creepage Distance
2
Max.
CAS300M17BM2,Rev. -
Note
Typical Performance
600
600
VGS = 20 V
VGS = 20 V
500
VGS = 18 V
VGS = 14 V
VGS = 16 V
400
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
500
VGS = 12 V
300
VGS = 10 V
200
100
0
2
4
6
8
10
12
400
VGS = 16 V
VGS = 10 V
300
200
Conditions:
TJ = 25°C
tp = 200 µs
0
14
0
2
4
Drain-Source Voltage VDS (V)
10
12
14
2.5
Conditions:
IDS = 225 A
VGS = 20 V
tp = 200 µs
VGS = 20 V
500
VGS = 18 V
2.0
VGS = 12 V
VGS = 16 V
400
On Resistance, RDS On (p.u.)
Drain-Source Current, IDS (A)
8
Figure 2. Output Characteristics TJ = 25 ˚C
600
VGS = 10 V
VGS = 14 V
300
200
100
Conditions:
TJ = 150°C
tp = 200 µs
0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
-50
14
-25
0
50
75
100
125
150
Figure 4. Normalized On-Resistance vs. Temperature
Figure 3. Output Characteristics TJ = 150 ˚C
30
25
Junction Temperature, TJ (°C)
Drain-Source Voltage VDS (V)
18
Conditions:
VGS = 20 V
tp = 200 µs
25
16
On Resistance, RDS On (mΩ)
On-Resistance, RDS ON (mΩ)
6
Drain-Source Voltage VDS (V)
Figure 1. Output Characteristics TJ = -40 ˚C
20
Tj = 150 °C
15
Tj = 25 °C
10
Tj = -40 °C
5
VGS = 12 V
14
VGS = 14 V
12
VGS = 16 V
10
VGS = 18 V
8
VGS = 20 V
6
4
Conditions:
IDS = 225 A
tp = 200 µs
2
0
0
100
200
300
400
500
600
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
VGS = 12 V
100
Conditions:
TJ = -40°C
tp = 200 µs
0
VGS = 14 V
VGS = 18 V
CAS300M17BM2,Rev. -
700
0
-50
-25
0
25
50
75
100
125
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature for
Various Gate-Source Voltage
150
Typical Performance
3.5
Drain-Source Current, IDS (A)
3.0
Threshold Voltage, Vth (V)
400
Conditions
VDS = 10 V
IDS = 15
0.5mA
mA
2.5
2.0
1.5
1.0
Conditions:
VDS = 20 V
tp = 200 µs
300
TJ = 150 °C
200
TJ = 25 °C
TJ = -40 °C
100
0.5
0.0
-50
-25
0
25
50
75
100
125
0
150
0
2
4
6
Junction Temperature TJ (°C)
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-4.0
VGS = -2 V
-300
-400
-1.5
-0.5
-2.0
-1.5
-1.0
-0.5
0.0
-300
-400
VGS = -2 V
-500
Conditions:
TJ = 25°C
tp = 200 µs
VGS = -5 V
-600
-1.0
-2.5
VGS = 0 V
-600
Drain-Source Voltage VDS (V)
Figure 10. Diode Characteristic at 25 ˚C
Figure 9. Diode Characteristic at -40 ˚C
-2.0
-3.0
-200
-500
Drain-Source Voltage VDS (V)
-2.5
-3.5
-100
VGS = -5 V
-3.0
16
-100
-200
-3.5
14
0
VGS = 0 V
Conditions:
TJ = -40 °C
tp = 200 µs
-4.0
12
0
Drain-Source Current, IDS (A)
-3.0
Drain-Source Current, IDS (A)
-3.5
10
Figure 8. Transfer Characteristic for Various
Junction Temperatures
Figure 7. Threshold Voltage vs. Temperature
-4.0
8
Gate-Source Voltage, VGS (V)
0.0
0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
-100
-200
VGS = 0 V
VGS = -5 V
-300
VGS = -2 V
-400
Conditions:
TJ = 150°C
tp = 200 µs
Drain-Source Voltage VDS (V)
Figure 11. Diode Characteristic at 150 ˚C
4
CAS300M17BM2,Rev. -
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
-200
VGS = 10 V
VGS = 20 V
-300
VGS = 15 V
-400
-500
-600
-100
VGS = 5 V
Conditions:
TJ = -40
25 °C
°C
tp = 200 µs
Drain-Source Voltage VDS (V)
-500
-600
Figure 12. 3rd Quadrant Characteristic at -40 ˚C
Typical Performance
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.0
-1.5
-0.5
0.0
0
0
VGS = 0 V
-100
VGS = 5 V
-200
VGS = 20 V
VGS = 10 V
-300
VGS = 15 V
-400
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
-300
-400
Conditions:
TJ = 150°C
25 °C
tp = 200 µs
-500
-600
Drain-Source Voltage VDS (V)
Figure 14. 3rd Quadrant Characteristic at 150 ˚C
Figure 13. 3rd Quadrant Characteristic at 25 ˚C
100
25
Conditions:
IDS =300A
IGS = 100 mA
VDS = 900 V
TJ = 25 °C
20
-200
VGS = 15 V
-600
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 200 kHz
Ciss
10
15
Capacitance (nF)
Gate-Source Voltage, VGS (V)
VGS = 20 V
VGS = 10 V
-500
Conditions:
TJ = 25°C
25 °C
tp = 200 µs
10
5
Coss
1
Crss
0.1
0
-5
0
200
400
600
800
1000
0.01
1200
0
50
Gate Charge, QG (nC)
100
150
200
1.6
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 200 kHz
Ciss
100
Drain-Source Voltage, VDS (V)
Figure 16. Capacitances vs. Drain-Source
Voltage (0 - 200 V)
Figure 15. Gate Charge Characteristics
1.4
10
1.2
Stored Energy, EOSS (mJ)
Capacitance (nF)
-100
VGS = 5 V
Coss
1
Crss
0.1
1
0.8
0.6
0.4
0.2
0
0.01
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
5
CAS300M17BM2,Rev. -
1000
0
200
400
600
800
1000
Drain to Source Voltage, VDS (V)
Figure 18. Output Capacitor Stored Energy
1200
Typical Performance
20
Switching Loss (mJ)
40
Conditions:
TJ = 25 °C
VDD = 900 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
Conditions:
TJ = 25 °C
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
35
ETotal
30
Switching Loss (mJ)
25
15
EOn
10
EOff
5
ETotal
25
20
EOn
15
10
EOff
5
0
0
50
100
150
200
250
300
0
350
0
Drain to Source Current, IDS (A)
150
200
250
300
Conditions:
TJ = 25 °C
VDD = 900 V
IDS =300 A
VGS = -5/+20 V
L = 77 μH
Figure 20. Inductive Switching Energy vs.
Drain Current For VDS = 1200 V, RG = 2.5 Ω
140
120
ETotal
20
ETotal
Switching Loss (mJ)
160
100
80
EOn
60
EOff
40
15
EOn
10
EOff
Conditions:
VDD = 900 V
RG(ext) = 2.5 Ω
IDS =300 A
VGS = -5/+20 V
L = 77 μH
5
20
0
0
0
5
10
15
20
25
30
35
40
45
External Gate Resistor RG(ext) (Ohms)
Figure 21. Inductive Switching Energy vs. RG(ext)
1400
0
25
50
75
100
125
150
1000
800
Figure 22. Inductive Switching Energy vs. Temperature
td (off)
600
400
td (on)
200
tr
tf
0
0
5
10
15
20
25
30
35
40
External Gate Resistor, RG(ext) (Ohms)
Figure 23. Timing vs. RG(ext)
CAS300M17BM2,Rev. -
175
Junction Temperature, TJ (°C)
Conditions:
TJ = 25 °C
VDD = 900 V
IDS = 300 A
VGS = -5/+20 V
1200
6
350
25
180
Time (ns)
100
Drain to Source Current, IDS (A)
Figure 19. Inductive Switching Energy vs.
Drain Current For VDS = 900V, RG = 2.5 Ω
Switching Loss (mJ)
50
Figure 24. Resistive Switching Time Description
Typical Performance
2000
Drain-Source Continous Current, IDS (DC) (A)
1800
Maximum Dissipated Power, Ptot (W)
350
Conditions:
TJ ≤ 150 °C
1600
1400
1200
1000
800
600
400
200
0
-40
-20
0
20
40
60
80
100
120
200
150
100
50
-20
0
20
40
60
80
100
120
140
Case Temperature, TC (°C)
Figure 26. Continous Drain Current Derating vs Case
Temperature
100E-3
100E-3
0.5
Junction To Case Impedance, ZthJC (oC/W)
Junction To Case Impedance, ZthJC (oC/W)
250
-40
Figure 25. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature
0.3
10E-3
0.1
0.05
0.02
1E-3
0.01
SinglePulse
0.5
0.3
10E-3
0.1
0.05
1E-3
0.02
0.01
SinglePulse
100E-6
100E-6
10E-6
10E-6
1E-6
10E-6
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
1
10
Figure 27. MOSFET Junction to Case Thermal Impedance
1000.0
10 µs
Limited by RDS On
Drain-Source Current, IDS (A)
300
0
140
Case Temperature, TC (°C)
100 µs
1 ms
100.0
100 ms
10.0
1.0
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
0.1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Figure 29. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature
7
Conditions:
TJ ≤ 150 °C
CAS300M17BM2,Rev. -
1E-6
10E-6
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
1
10
Figure 28. Diode Junction to Case Thermal Impedance
Schematic
Package Dimensions (mm)
CAS300M17BM2
8
CAS300M17BM2,Rev. -
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems.
Module Application Note:
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules.
Therefore, special precautions are required to realize the best performance. The interconnection between the gate
driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the
potential for device oscillation. Also, great care is required to insure minimum inductance between the module and
link capacitors to avoid excessive VDS overshoots.
Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2.
[CPWR-AN12, CPWR-AN13]
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
9
CAS300M17BM2 Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power