IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17401. Ordering Information IRFD120 PACKAGE HEXDIP 2315.3 Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. PART NUMBER File Number Symbol BRAND D IRFD120 NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-275 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD120 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD120 100 100 1.3 5.2 ±20 1.0 0.008 36 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS ID = 250µA, VGS = 0V (Figure 9) 100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V - - 25 µA - - 250 µA 1.3 - - A Zero Gate Voltage Drain Current IDSS TEST CONDITIONS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC On-State Drain Current (Note 2) Gate Source Leakage ID(ON) IGSS Drain Source On Resistance (Note 2) rDS(ON) Forward Transconductance (Note 2) gfs td(ON) Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs VDS > ID(ON) x rDS(ON) Max, VGS = 10V VGS = ±20V - - ±500 nA ID = 0.6A, VGS = 10V (Figures 7, 8) - 0.25 0.30 Ω VDS > ID(ON) x rDS(ON)MAX , ID = 0.6A (Figure 11) 0.9 1.0 - S VDD = 0.5 x Rated BVDSS, ID ≈ 1.3A, VGS = 10V, RG = 9.1Ω RL = 38.5Ω for VDD = 50V MOSFET Switching Times are Essentially Independent of Operating Temperature - 20 40 ns - 35 70 ns VGS = 10V, ID = 1.3A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 13) Gate Charge is Essentially Independent of Operating Temperature - 11 15 nC - 6.0 - nC - 5.0 - nC VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) - 450 - pF - 35 70 ns - 50 100 ns Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 200 - pF Reverse Transfer Capacitance CRSS - 50 - pF - 4.0 - nH - 6.0 - nH - - 120 oC/W Internal Drain Inductance LD Internal Source Inductance LS Measured From the Drain Lead, 2mm (0.08in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Device’s Measured From the Source Inductances D Lead, 2mm (0.08in) from Header to Source Bonding LD Pad G LS S Thermal Resistance Junction to Ambient 4-276 RθJA Free Air Operation IRFD120 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulse Source to Drain Current ISD ISDM TEST CONDITIONS MIN TYP MAX UNITS - - 1.3 A - - 5.2 A TJ = 25oC, ISD = 1.3A, VGS = 0V (Figure 12) - - 2.5 V TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/µs TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/µs - 280 - ns - 1.6 - µC Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr Reverse Recovery Charge QRR NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. VDD = 25V, starting TJ = 25oC, L = 32mH, RG = 25Ω, peak IAS = 1.3A. Typical Performance Curves Unless Otherwise Specified 1.5 POWER DISSIPATION MULTIPLIER 1.2 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 1.2 0.9 0.6 0.3 0 0 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 150 25 50 75 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 150 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 100µs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1 VGS = 9V 16 VGS = 8V 12 VGS = 7V 8 VGS = 6V 4 VGS = 5V DC TJ = MAX RATED 0.1 100ms ID, DRAIN CURRENT (A) VGS = 10V ID, DRAIN CURRENT (A) 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 10 0.01 100 TA , AMBIENT TEMPERATURE (oC) VGS = 4V 0 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4-277 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. OUTPUT CHARACTERISTICS 50 IRFD120 Typical Performance Curves PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX IDS(ON), DRAIN TO SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 10 Unless Otherwise Specified (Continued) VGS = 8V VGS = 7V 8 VGS = 10V VGS = 9V VGS = 6V 6 4 VGS = 5V 2 VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS > ID(ON) x rDS(ON)MAX TJ = -55oC o TJ = 25 C TJ = 125oC 16 12 8 4 0 5 0 2 FIGURE 5. SATURATION CHARACTERISTICS 2.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 2µs PULSE TEST VGS = 10V 0.4 VGS = 20V 0.2 0 NOTE: 8 10 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 0.6A 1.4 1.0 0.6 0.2 0 10 -40 40 20 30 ID, DRAIN CURRENT (A) 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) Heating effect of 2µs pulse is minimal. FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD IDS = 250µA 800 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 6 FIGURE 6. TRANSFER CHARACTERISTICS 0.8 0.6 4 VGS, GATE TO SOURCE VOLTAGE (V) 1.05 0.95 0.85 600 CISS 400 COSS 200 CRSS 0.75 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-278 0 0 10 40 30 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE IRFD120 Typical Performance Curves PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2 TJ = -55oC ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 5 Unless Otherwise Specified (Continued) TJ = 25oC 4 TJ = 125oC 3 2 1 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 102 5 2 10 TJ = 150oC 5 TJ = 25oC 2 0.1 0 0 4 8 12 ID , DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 2 3 1 VSD, SOURCE TO DRAIN VOLTAGE (V) 0 20 16 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE (V) ID = 5.2A VDS = 20V 15 VDS = 50V VDS = 80V 10 5 0 0 2 4 6 QG, GATE CHARGE (nC) 8 10 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP IAS + RG - VGS VDS VDD VDD DUT 0V tP IAS 0 0.01Ω tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT 4-279 FIGURE 15. UNCLAMPED ENERGY WAVEFORMS IRFD120 Test Circuits and Waveforms (Continued) tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT Ig(REF) 0 FIGURE 19. 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