Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 Unit: mm 2.3±0.1 0.8 max. 2 1 ■ Absolute Maximum Ratings Ta = 25°C 3 0.75±0.1 2.3±0.1 Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1.5 A Peak collector current ICP −3 A Collector power dissipation (TC = 25°C) PC 10 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 2 (5.5) Parameter (5.3) (4.35) (3.0) (1.8) 4.6±0.1 Collector-base voltage (Emitter open) 1.0±0.1 0.1±0.05 0.5±0.1 1.0±0.2 0.5±0.1 1.8±0.1 • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC 2.5±0.1 ■ Features 7.3±0.1 6.5±0.1 5.3±0.1 4.35±0.1 3 1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −1 mA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −40 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA 220 −1 V −1.5 V Forward current transfer ratio hFE1 * hFE2 Conditions VCE = −5 V, IC = −1 A 80 VCE = −5 V, IC = −1 mA 10 Collector-emitter saturation voltage VCE(sat) IC = −1.5 A, IB = − 0.15 A Base-emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.2 A Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Min Typ Max Unit V V VCE = −5 V, IC = − 0.5 A, f = 200 MHz 150 MHz VCB = −20 V, IE = 0, f = 1 MHz 45 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 80 to 160 120 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00035AED 1 2SB0968 IC VCE −4.0 TC=Ta IB=–40mA −3.5 Collector power dissipation PC (W) VCE(sat) IC TC=25˚C –35mA Collector current IC (A) 12 8 4 −3.0 –30mA –25mA −2.5 –20mA −2.0 –15mA −1.5 –10mA −1.0 –5mA − 0.5 0 0 0 40 80 120 160 −2 0 −4 −6 −8 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) PC Ta 16 IC/IB=10 −10 −1 TC=100˚C − 0.1 25˚C − 0.01 − 0.01 –25˚C − 0.1 −1 Collector current IC (A) fT I E IC/IB=10 −10 TC=–25˚C 100˚C 25˚C − 0.1 − 0.01 − 0.01 − 0.1 TC=100˚C 10 Collector current IC (A) 80 40 102 100 80 60 40 20 −100 Collector-base voltage VCB (V) 103 104 Emitter current IE (mA) ICEO Ta 1 000 TC=25˚C VCE=–12V −100 −80 ICEO (Ta) ICEO (Ta = 25°C) 120 −10 120 VCER RBE IE=0 f=1MHz TC=25˚C 140 160 0 10 −1 −120 Collector-emitter voltage (V) (Resistor between B and E) VCER Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 200 Collector current IC (A) Cob VCB 2 25˚C –25˚C 100 1 − 0.01 −1 Transition frequency fT (MHz) −1 0 −1 VCB=–5V f=200MHz TC=25˚C VCE=–5V 1 000 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 240 −60 −40 100 10 −20 0 0.001 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJD00035AED 1 0 20 40 60 80 100 Ambient temperature Ta (°C) 120 2SB0968 Safe operation area −10 Single pulse TC=25˚C Collector current IC (A) ICP t=1ms −1 IC t=1s − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJD00035AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL