Datasheet

AON7426
30V N-Channel MOSFET
General Description
Product Summary
The AON7426 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
RoHS and Halogen-Free Compliant
VDS
30V
40A
RDS(ON) (at VGS=10V)
< 5.5mΩ
RDS(ON) (at VGS =4.5V)
< 8mΩ
Typical ESD protection
HBM Class 3A
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
130
18
IDSM
TA=70°C
±20
31
IDM
TA=25°C
Units
V
40
ID
TC=100°C
Maximum
30
A
14
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
61
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev. 3.0: May 2015
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
12
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
29
PD
TC=100°C
-55 to 150
Typ
30
60
3.5
°C
Max
40
75
4.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7426
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.35
ID(ON)
On state drain current
VGS=10V, VDS=5V
130
TJ=55°C
10
µA
1.85
2.35
V
4.5
5.5
7.2
8.8
VGS=4.5V, ID=14A
5.8
8
mΩ
1
V
35
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=18A
75
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=18A
Coss
Units
V
1
IDSS
RDS(ON)
Max
mΩ
S
1410
1765
2120
pF
VGS=0V, VDS=15V, f=1MHz
195
283
370
pF
90
155
220
pF
VGS=0V, VDS=0V, f=1MHz
1.3
2.6
3.9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26
33
40
nC
Qg(4.5V) Total Gate Charge
12.5
16
19.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=18A
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
5.2
nC
6.2
nC
6
ns
4
ns
33
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=18A, dI/dt=500A/µs
9.5
12.3
15
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
20
25
30
7.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev. 3.0: May 2015
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Page 2 of 6
AON7426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
4V
VDS=5V
4.5V
100
80
6V
80
60
ID(A)
ID (A)
3.5V
60
40
125°C
40
20
VGS=3V
20
25°C
0
0
0
1
2
3
4
1
5
10
3
4
5
Normalized On-Resistance
2
8
VGS=4.5V
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
1.8
VGS=10V
ID=18A
1.6
17
5
2
VGS=4.5V
10
1.4
1.2
ID=14A
1
0.8
0
0
5
10
0
15
20
25
30
35
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
15
1.0E+02
ID=18A
1.0E+01
12
40
1.0E+00
9
IS (A)
RDS(ON) (mΩ)
125°C
6
125°C
1.0E-01
29
1.0E-02
25°C
1.0E-03
3
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev. 3.0: May 2015
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2400
VDS=15V
ID=18A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1600
1200
800
Coss
400
0
Crss
0
0
5
10
15
20
25
30
35
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
25
30
10.0
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
Power (W)
100µs
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
160
10µs
RDS(ON)
ID (Amps)
20
200
100.0
17
5
2
10
120
80
40
1
10
100
VDS (Volts)
0
0.0001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10
10
0.001
0.01
0.1
1
10
0
Pulse Width (s) 18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4.2°C/W
1
29
PD
0.1
Ton
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev. 3.0: May 2015
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Page 4 of 6
AON7426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
100
TA=150°C
10
40
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=125°C
30
20
10
1
0
1
10
100
1000
0
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
1000
40
Power (W)
Current rating ID(A)
50
30
17
5
2
10
100
20
10
10
1
1E-05
0
0
25
50
75
100
125
150
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
29
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev. 3.0: May 2015
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Page 5 of 6
AON7426
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev. 3.0: May 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6