PANASONIC 2SC3944A

Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
Unit: mm
■ Features
●
■ Absolute Maximum Ratings
Parameter
Symbol
Collector to
2SC3944
base voltage
2SC3944A
Collector to
2SC3944
Ratings
150
VCBO
180
150
VCEO
emitter voltage 2SC3944A
Emitter to base voltage
VEBO
Peak collector current
Collector current
Collector power TC=25°C
dissipation
(TC=25˚C)
180
A
1
A
Tstg
■ Electrical Characteristics
Parameter
2SC3944
current
2SC3944A
Collector to base
2SC3944
voltage
2SC3944A
Emitter to base voltage
0.7±0.1
7.5±0.2
16.7±0.3
4.2±0.2
1.3±0.2
0.5 +0.2
–0.1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2.0
150
˚C
–55 to +150
˚C
(TC=25˚C)
Symbol
Collector cutoff
0.8±0.1
V
1.5
Tj
1.4±0.1
5.08±0.5
IC
Storage temperature
φ3.1±0.1
1
ICP
Junction temperature
2.7±0.2
2.54±0.25
V
15
4.2±0.2
5.5±0.2
V
5
PC
Ta=25°C
Unit
10.0±0.2
4.0
●
14.0±0.5
●
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics
High transition frequency fT
Makes up a complementary pair with 2SA1535 and 2SA1535A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier
Full-pack package which can be installed to the heat sink with
one screw
Solder Dip
●
ICBO
Conditions
min
VCB = 180V, IE = 0
10
150
IC = 1mA, IB = 0
VEBO
IE = 10µA, IC = 0
5
hFE1
max
10
VCEO
*
typ
VCB = 150V, IE = 0
Unit
µA
V
180
V
VCE = 10V, IC = 150mA
95
160
hFE2
VCE = 5V, IC = 500mA
50
100
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 50mA
0.5
2
V
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB = 50mA
1
2
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 10MHz
200
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
30
Forward current transfer ratio
*h
FE1
220
MHz
50
pF
Rank classification
Rank
Q
R
hFE1
95 to 155
130 to 220
1
Power Transistors
2SC3944, 2SC3944A
VCE(sat) — IC
15
10
5
0
0
20
40
60
80 100 120 140 160
IC/IB=10
3
1
0.3
TC=100˚C
25˚C
0.1
–25˚C
0.03
0.01
0.01
Ambient temperature Ta (˚C)
0.03
Transition frequency fT (MHz)
Forward current transfer ratio hFE
25˚C
–25˚C
30
10
3
0.03
0.1
0.3
Area of safe operation (ASO)
Single pulse
TC=25˚C
t=<50µs
DC
0.3
t=10ms
0.1
1ms
0.03
2SC3944
0.01
0.003
0.001
1
3
10
30
100
2SC3944A
Collector current IC (A)
ICP
IC
300
1000
Collector to emitter voltage VCE (V)
2
0.1
0.03
0.03
0.1
0.3
1
Cob — VCB
100
300
200
100
IE=0
f=1MHz
TC=25˚C
80
60
40
20
0
– 0.03
– 0.1
– 0.3
Emitter current IE (A)
10
1
100˚C
25˚C
0.3
Collector current IC (A)
VCB=10V
f=10MHz
TC=25˚C
0
– 0.01
1
Collector current IC (A)
3
TC=–25˚C
1
0.01
0.01
1
400
VCE=10V
1
0.01
0.3
3
fT — IE
TC=100˚C
100
0.1
IC/IB=10
Collector current IC (A)
hFE — IC
1000
300
VBE(sat) — IC
10
Base to emitter saturation voltage VBE(sat) (V)
20
10
Collector output capacitance Cob (pF)
Collector power dissipation PC (W)
TC=Ta
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
25
–1
1
3
10
30
100
Collector to base voltage VCB (V)