VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” (Ultrafast Speed IGBT), 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC INT-A-PAK • UL approved file E78996 • Designed for industrial level PRODUCT SUMMARY VCES 600 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IC DC 209 A VCE(on) at 200 A, 25 °C 2.6 V Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge with SMD gate resistor BENEFITS • Benchmark efficiency for UPS and welding application • Rugged transient performance • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 209 TC = 80 °C 142 Pulsed collector current ICM 400 Clamped inductive load current ILM 400 Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation PD Isolation voltage Operating junction temperature range VISOL TJ A TC = 25 °C 178 TC = 80 °C 121 ± 20 V TC = 25 °C 781 TC = 80 °C 438 Any terminal to case, t = 1 min 2500 V -40 to +150 °C W Revision: 10-Jun-15 Document Number: 94503 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 100 A - 1.95 2.1 VGE = 15 V, IC = 200 A - 2.6 2.84 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.28 2.5 VGE = 15 V, IC = 200 A, TJ = 125 °C - 3.14 3.48 VCE = VGE, IC = 500 μA 3 4.2 6 VGE = 0 V, VCE = 600 V - 0.005 0.2 VGE = 0 V, VCE = 600 V, TJ = 150 °C - 0.01 15 UNITS V mA IC = 100 A - 1.39 1.78 IC = 200 A - 1.64 2.2 IC = 100 A, TJ = 125 °C - 1.32 1.69 IC = 200 A, TJ = 125 °C - 1.67 2.30 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 3.65 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss SYMBOL TEST CONDITIONS Eon IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 L = 200 μH, TJ = 25 °C Turn-off switching loss Eoff - 6.9 - Total switching loss Etot - 10.55 - Turn-on switching loss Eon - 3.8 - Turn-off switching loss Eoff - 7.8 - Total switching loss Etot - 11.6 - - 507 - tr - 133 - td(off) - 538 - - 92 - Turn-on delay time Rise time Turn-off delay time Fall time td(on) mJ IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 L = 200 μH, TJ = 125 °C ns tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 400 A, Rg = 27 VGE = 15 V to 0 Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 400 V, VP = 600 V, Rg = 27 VGE = 15 V to 0 Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 25 °C IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 125 °C Fullsquare 10 - - - 226 260 ns - 17 20 A - 1900 2600 nC - 290 330 ns - 25 30 A - 3600 5000 nC Revision: 10-Jun-15 Document Number: 94503 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C - 0.13 0.16 - 0.19 0.32 - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - Operating junction and storage temperature range IGBT Junction to case per leg Diode Case to sink per module RthJC RthCS °C/W Mounting torque Nm Weight 300 g 300 Vge = 18V Vge = 15V Vge = 12V 250 250 200 150 IcE (A) IcE (A) 200 Vge = 9V 150 100 100 50 50 Tj = 125°C Tj = 25°C 0 0 0 1 2 3 0 4 2 3 4 5 6 7 8 9 VGE (V) Fig. 1 - Typical IGBT Output Characteristics TJ = 25 °C, tp = 500 μs Fig. 3 - Typical Transfer Characteristics VCE = 20 V, tp = 500 μs 300 3.5 VCE, Collector -to-Emitter Voltage (V) Vge = 18V Vge = 15V Vge = 12V 250 200 IcE (A) 1 VCE (V) Vge = 9V 150 100 50 Ic = 200A 3 2.5 Ic = 100A 2 Ic = 50A 1.5 1 0 0 1 2 3 4 5 0 40 80 120 160 VCE (V) TJ, Junction Temperature (°C) Fig. 2 - Typical IGBT Output Characteristics TJ = 125 °C, tp = 500 μs Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94503 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors 1000 200 td(off) Switching Time (ns) IF (A) 150 100 Tj = 125°C 50 td(on) tf 100 tr Tj = 25°C 10 0 0.0 0.5 1.0 1.5 40 2.0 60 80 100 120 140 160 180 200 220 VF (V) IC (A) Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 10 , VGE = 15 V Fig. 5 - Diode Forward Characteristics, tp = 500 μs 13.0 160 12.0 11.0 120 Eoff 10.0 Energy (mJ) TC, Case Temperature (°C) 140 100 80 DC 60 9.0 8.0 Eon 7.0 6.0 40 5.0 20 4.0 3.0 0 0 50 100 150 200 5 250 10 15 20 25 30 35 40 45 50 Maximum DC Collector Current (A) Rg (Ω) Fig. 6 - Maximum Collector Current vs. Case Temperature Fig. 9 - Typical Energy Loss vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 200 A, VGE = 15 V 8.0 10000 7.0 5.0 Energy Time (ns) Energy (mJ) 6.0 Eoff 4.0 3.0 Eon 2.0 1000 td(off) td(on) tr 100 tf 1.0 0 10 50 100 150 200 IC (A) Fig. 7 - Typical Energy Loss vs. IC TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 10 , VGE = 15 V 0 10 20 30 40 50 RG (Ω) Fig. 10 - Typical Switching Time vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 200 A, VGE = 15 V Revision: 10-Jun-15 Document Number: 94503 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors 100 Total Switching Losses (mJ) 10 ohm 90 80 IRR (A) 70 27 ohm 60 50 47 ohm 40 30 20 40 80 120 160 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 5 200 10 15 IF (A) 25 30 35 40 45 50 RG (Ω) Fig. 14 - Typical Switching Losses vs. Gate Resistance TJ = 125 °C, L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V Fig. 11 - Typical Diode Irr vs. IF TJ = 125 °C 100 100 Total Switching Losses (mJ) 90 80 IRR (A) 20 70 60 50 40 30 Ic = 200A 10 Ic = 100A Ic = 50A 1 0 10 20 30 40 50 0 25 50 75 100 125 TJ - Junction Temperature (°C) RG (Ω) Fig. 15 - Typical Switching Losses vs. Junction Temperature; L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V Fig. 12 - Typical Diode Irr vs. Rg TJ = 125 °C, IF = 200 A 100 12 Total Switching Losses (mJ) 11 IRR (A) 90 80 70 60 10 9 8 7 6 5 4 3 50 2 600 700 800 900 1000 1100 1200 1300 40 60 80 100 120 140 160 180 200 220 dIF / dt (A/μs) IC (A) Fig. 13 - Typical Diode Irr vs. dIF/dt TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current; TJ = 125 °C,Rg1 = 10 , Rg2 = 0 , VCC = 360 V, VGE = 15 V Revision: 10-Jun-15 Document Number: 94503 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors Thermal response (Z thJC) 1 0.1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 1E-02 2. Peak Tj = Pdm x ZthJC + Tc 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 t1 , Rectangular Pulse Duration (sec) Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®) Revision: 10-Jun-15 Document Number: 94503 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 200 T S 60 N PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 NPT 4 - Current rating (200 = 200 A) 5 - Circuit configuration (T = Half-bridge) 6 - Package indicator (S = INT-A-PAK) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (N = Ultrafast IGBT) 9 - Lead (Pb)-free CIRCUIT CONFIGURATION 3 6 7 1 4 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95543 Revision: 10-Jun-15 Document Number: 94503 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK IGBT Ø 6.5 (Ø 0.25) 80 (3.15) 23 (0.91) 14.3 (0.56) 23 (0.91) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 2 3 5 1 66 (2.60) 3 screws M5 x 10 4 35 (1.38) 7 6 17 (0.67) 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) 37 (1.44) 94 (3.70) Revision: 27-Mar-13 Document Number: 95543 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000