SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 0.6 A - 470 620 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G Simplified outline gate 2 S source 3 D drain Graphic symbol D 1 3 2 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMZB600UNE Package Name Description Version DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 7. Marking Table 4. Marking codes Type number Marking code PMZB600UNE 0101 1000 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 0.6 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.4 A - 2.5 A [2] - 360 mW [1] - 715 mW - 2700 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.4 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZB600UNE Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 21 July 2014 25 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-012964 10 Limit RDSon = VDS/ID ID (A) tp = 100 µs 1 tp = 1 ms 10-1 tp = 10 ms DC; Tsp = 25 °C tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMZB600UNE Product data sheet Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10- 3 0.05 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C - 470 620 mΩ VGS = 4.5 V; ID = 0.6 A; Tj = 150 °C - 760 1000 mΩ VGS = 2.5 V; ID = 0.5 A; Tj = 25 °C - 620 850 mΩ VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C - 845 1300 mΩ VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 1125 3000 mΩ VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 2210 - mΩ IGSS RDSon gate leakage current drain-source on-state resistance gfs forward transconductance VDS = 5 V; ID = 0.6 A; Tj = 25 °C - 1 - S RG gate resistance f = 1 MHz - 34 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 0.6 A; VGS = 4.5 V; - 0.4 0.7 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 21.3 - pF Coss output capacitance Tj = 25 °C - 5.4 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = 10 V; ID = 0.6 A; VGS = 4.5 V; - 5.6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 9.2 - ns td(off) turn-off delay time - 19 - ns tf fall time - 51 - ns PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IS = 0.36 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V Source-drain diode VSD source-drain voltage aaa-008998 2.5 4.5 V ID (A) aaa-008999 10-3 ID (A) 2.0 2.5 V 10-4 1.5 min 1.0 1.8 V 0.5 typ max 10-5 1.5 V VGS = 1.2 V 0 Fig. 7. 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-009000 3 RDSon (Ω) 1.5 V 1.2 V 1.8 V aaa-009001 3 2V RDSon (Ω) 2.5 V 2 2 3V 1 1 Tj = 150 °C VGS = 4.5 V 0 0 0.5 1.0 1.5 2.0 ID (A) Tj = 25 °C 0 2.5 Tj = 25 °C Fig. 9. Product data sheet 1 2 3 4 VGS (V) 5 ID = 0.6 A Drain-source on-state resistance as a function of drain current; typical values PMZB600UNE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-009002 2.5 aaa-009003 2.0 ID (A) a 2.0 1.5 1.5 1.0 1.0 Tj = 150 °C 0.5 0 0 1 Tj = 25 °C 2 0.5 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 180 aaa-009005 102 VGS(th) (V) Tj (°C) Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-009004 1.5 0 C (pF) 1.0 Ciss 10 max Coss 0.5 typ Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 13. Gate-source threshold voltage as a function of junction temperature PMZB600UNE 1 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-009006 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.1 0.2 0.3 Fig. 16. MOSFET transistor: Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.6 A; VDS = 10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-009007 2.5 IS (A) 2.0 1.5 1.0 0.5 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 1.2 1.6 2.0 VSD (V) VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 12. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig. 19. Package outline DFN1006B-3 (SOT883B) 13. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZB600UNE v.1 20140721 Product data sheet - - PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 14 PMZB600UNE NXP Semiconductors 20 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 July 2014 PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 14