SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits RDSon specified at 1.8 V operation Fast switching Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V - - -3.2 A - 80 102 mΩ drain current ID VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics drain-source on-state resistance RDSon [1] VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G SOT457 (TSOP6) S 017aaa257 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMN80XP Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN80XP WA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - -20 V VGS gate-source voltage drain current ID peak drain current IDM total power dissipation Ptot -12 12 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.2 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.5 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.6 A Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C - -10 A [2] - 385 mW [1] - 925 mW - 4000 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1 A Source-drain diode source current IS Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 125 0 −75 175 Tj (°C) Normalized total power dissipation as a function of junction temperature Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature 017aaa528 -102 ID (A) Limit RDSon = VDS/ID -10 (1) -1 (2) (3) (4) -10-1 (5) (6) -10-2 -10-1 -1 -10 VDS (V) -102 IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - 281 325 K/W [2] - 116 135 K/W [3] - 73 85 K/W - 27 31 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s 017aaa529 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 0 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa530 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 1 0.01 10-1 10-5 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.75 -1 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tamb = 150 °C - - -10 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C - 80 102 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; ID = -2.5 A; Tj = 150 °C - 116 148 mΩ VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 95 125 mΩ VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C - 120 156 mΩ VDS = -10 V; ID = -2.5 A; Tj = 25 °C - 15 - S VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; Tj = 25 °C - 5 7.5 nC - 0.7 - nC - 0.9 - nC VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 550 - pF - 63 - pF - 53 - pF - 6 - ns - 14 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 120 - ns tf fall time - 50 - ns - -0.8 -1.2 V VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMN80XP Product data sheet IS = -1.0 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa531 -10 -10 V ID (A) -8 VGS = -1.8 V -2 V -4.5 V 017aaa532 -10-3 ID (A) -2.5 V -1.6 V min -6 typ max -10-4 -1.5 V -4 -1.4 V -2 -1.2 V -1 V 0 0 -1 -2 -3 VDS (V) -10-5 -4 Tj = 25 °C Fig 6. -0.25 -0.50 -0.75 -1.00 VGS (V) Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa533 0.25 -1.3 V RDSon (Ω) 0 Sub-threshold drain current as a function of gate-source voltage 017aaa534 0.4 VGS = -1.4 V RDSon (Ω) 0.20 -1.6 V 0.15 0.3 -1.8 V 0.2 -2.5 V -4.5 V 0.10 Tj = 25 °C 0.1 Tj = 150 °C 0.05 0 0 -1 -2 -3 ID (A) 0 -4 Tj = 25 °C Fig 8. Product data sheet -1 -2 -3 VGS (V) -4 ID = -3 A Drain-source on-state resistance as a function of drain current; typical values PMN80XP 0 Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa535 -10 017aaa536 2.0 ID (A) a -8 1.5 -6 1.0 -4 0.5 -2 Tj = 150 °C 0 0 -0.5 Tj = 25 °C -1.0 -1.5 0 -60 -2.0 -2.5 VGS (V) 0 60 120 Tj (°C) 180 VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa537 -2.0 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa538 103 VGS(th) (V) Ciss -1.5 C (pF) max 102 -1.0 typ Coss min -0.5 Crss 0 -60 0 60 120 Tj (°C) 180 10 -10-1 ID = -0.25 mA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature PMN80XP -1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa539 -12 VDS VGS (V) ID -8 VGS(pl) VGS(th) VGS -4 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0 0 3 6 9 QG (nC) 12 ID = -3 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate charge waveform definitions Fig 15. Gate charge waveform definitions 017aaa540 -4 IS (A) -3 -2 -1 0 Tj = 150 °C 0 -0.4 Tj = 25 °C -0.8 -1.2 VDS (V) -1.4 VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 18. Package outline SOT457 (TSOP6) PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 19. Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 20. Wave soldering footprint for SOT457 (TSOP6) PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMN80XP v.1 20120508 Product data sheet - - PMN80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMN80XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 May 2012 Document identifier: PMN80XP