SO T4 57 PMN70XP 20 V, P-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1240 mW 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -3.9 A - 72 88 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -3.1 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G TSOP6 (SOT457) S 017aaa257 6. Ordering information Table 3. Ordering information Type number PMN70XP Package Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN70XP H5 PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.9 A VGS = -4.5 V; Tamb = 25 °C [1] - -3.1 A VGS = -4.5 V; Tamb = 100 °C [1] - -2 A - -13 A [2] - 530 mW [1] - 1.24 W - 4.46 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1.2 A Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMN70XP Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 January 2016 25 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-020593 -102 ID (A) -10 Limit RDSon = VDS/ID tp = 10 µs 100 µs -1 1 ms 10 ms DC; Tsp = 25 °C -10-1 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 VDS (V) -102 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 205 235 K/W [2] - 88 101 K/W [2] - 55 63 K/W - 24 28 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-020456 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0 1 10-3 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-020457 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 10 0.1 0.05 0 1 10- 3 0.75 0.33 0.2 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS=VGS; Tj = 25 °C -0.47 -0.65 -0.9 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -3.1 A; Tj = 25 °C - 72 88 mΩ VGS = -4.5 V; ID = -3.1 A; Tj = 150 °C - 107 130 mΩ VGS = -2.5 V; ID = -2.6 A; Tj = 25 °C - 88 116 mΩ VGS = -1.8 V; ID = -0.7 A; Tj = 25 °C - 110 170 mΩ VGS = -1.5 V; ID = -0.1 A; Tj = 25 °C - 150 360 mΩ VDS = -10 V; ID = -2 A; Tj = 25 °C - 15 - S total gate charge VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; - 5 7.5 nC QGS gate-source charge Tj = 25 °C - 0.7 - nC QGD gate-drain charge - 0.9 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 550 - pF Coss output capacitance Tj = 25 °C - 63 - pF Crss reverse transfer capacitance - 53 - pF td(on) turn-on delay time VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 14 - ns td(off) turn-off delay time - 120 - ns tf fall time - 50 - ns - -0.9 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMN70XP Product data sheet IS = -1.2 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 017aaa531 -10 -10 V ID (A) -4.5 V -8 VGS = -1.8 V -2 V aaa-012263 -10-3 ID (A) -2.5 V -10-4 -1.6 V min -6 typ max -1.5 V -4 -10-5 -1.4 V -2 -1.2 V -1 V 0 Fig. 6. 0 -1 -2 -3 VDS (V) -10-6 -4 0 -0.5 -1.0 VGS (V) -1.5 Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-012264 0.3 -1.3 V aaa-012265 0.4 -1.4 V RDSon (Ω) RDSon (Ω) -1.6 V 0.3 -1.8 V 0.2 0.2 -2.5 V 0.1 Tj = 150 °C 0.1 VGS = -4.5 V 0 0 -1 -2 -3 ID (A) Tj = 25 °C 0 -4 Tj = 25 °C Fig. 8. Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -3 A Drain-source on-state resistance as a function of drain current; typical values PMN70XP 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 017aaa535 -10 017aaa536 2.0 ID (A) a -8 1.5 -6 1.0 -4 0.5 -2 0 Tj = 150 °C 0 -0.5 Tj = 25 °C -1.0 -1.5 0 -60 -2.0 -2.5 VGS (V) VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-012266 -1.5 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa538 103 Ciss VGS(th) (V) C (pF) -1.0 max 102 typ -0.5 Coss min 0 -60 0 60 Crss 120 Tj (°C) 10 -10-1 180 ID = -250 µA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMN70XP -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-012267 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 -1 0 QGS2 0 2 4 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 6 ID = -2.8 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa540 -4 IS (A) -3 -2 -1 0 Tj = 150 °C 0 -0.4 Tj = 25 °C -0.8 -1.2 VSD (V) -1.4 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 12. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.95 1.9 0.40 0.25 Dimensions in mm 0.26 0.10 14-10-03 Fig. 18. Package outline TSOP6 (SOT457) 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for TSOP6 (SOT457) PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20. Wave soldering footprint for TSOP6 (SOT457) PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 16 PMN70XP NXP Semiconductors 20 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN70XP v.1 20160129 Product data sheet - - PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 11 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 January 2016 PMN70XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 16 / 16