SO T8 83 PMZ290UN 20 V, single N-channel Trench MOSFET 6 November 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless and ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.48 mm height 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 1 A - 290 350 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 200 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 1 2 S source 2 3 D drain Graphic symbol D 3 Transparent top view DFN1006-3 (SOT883) G S 017aaa253 6. Ordering information Table 3. Ordering information Type number PMZ290UN Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ290UN ZG PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 1 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.6 A - 4 A [2] - 360 mW [1] - 715 mW - 2700 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.67 A Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 001aao121 120 Pder (%) 001aao122 120 Ider (%) 80 80 40 40 0 -75 Fig. 1. [1] -25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZ290UN Product data sheet 0 -75 175 Fig. 2. -25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 6 November 2013 25 © NXP N.V. 2013. All rights reserved 3 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET aaa-001944 10 ID (A) limit RDSon = VDS / ID 1 (1) (2) (3) 10-1 (4) (5) 10-2 10-1 1 10 VDS (V) 102 IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms 2 (5) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 4 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10- 3 0.05 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 100 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 0.1 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 0.1 µA VGS = 4.5 V; ID = 200 mA; Tj = 25 °C - 290 350 mΩ VGS = 4.5 V; ID = 200 mA; Tj = 150 °C - 460 560 mΩ VGS = 2.5 V; ID = 100 mA; Tj = 25 °C - 360 450 mΩ VGS = 1.8 V; ID = 75 mA; Tj = 25 °C - 460 650 mΩ VDS = 5 V; ID = 200 mA; Tj = 25 °C - 2 - S total gate charge VDS = 10 V; ID = 1 A; VGS = 4.5 V; - 0.89 1.2 nC QGS gate-source charge Tj = 25 °C - 0.13 - nC QGD gate-drain charge - 0.18 - nC Ciss input capacitance VDS = 20 V; f = 1 MHz; VGS = 0 V; - 45 68 pF Coss output capacitance Tj = 25 °C - 11 - pF Crss reverse transfer capacitance - 7 - pF td(on) turn-on delay time VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; - 4.5 9 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 10 - ns td(off) turn-off delay time - 18.5 37 ns tf fall time - 5 - ns - 0.75 1.2 V IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZ290UN Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET aaa-001945 2.0 (1) ID (A) 03am43 10- 3 (2) ID (A) (3) 1.5 10- 4 (4) min typ max 1.0 0.5 0 10- 5 (5) 0 1 2 3 VDS (V) 10- 6 4 Tj = 25 °C Fig. 7. (1) VGS = 4.5 V 0 0.4 0.8 VGS (V) 1.2 Sub-threshold drain current as a function of gate-source voltage (2) VGS = 2.5 V (3) VGS = 2.0 V (4) VGS = 1.8 V (5) VGS = 1.5 V Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-001946 1.0 aaa-001947 1.0 RDSon (Ω) RDSon (Ω) 0.8 0.8 (1) 0.6 0.6 (2) (3) 0.4 (1) 0.4 (2) (4) (5) 0.2 0 0 0.5 1.0 0.2 1.5 ID (A) 0 2.0 1 Tj = 25 °C ID = 800 mA (1) VGS = 1.8 V (1) Tj = 150 °C (2) VGS = 2 V (2) Tj = 25 °C (3) VGS = 2.5 V Fig. 9. (4) VGS = 3 V (5) VGS = 4.5 V Fig. 8. 0 2 3 4 VGS (V) 5 Drain-source on-state resistance as a function of gate-source voltage; typical values Drain-source on-state resistance as a function of drain current; typical values PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET aaa-001948 2.0 ID (A) 003aac024 2.0 a (1) (2) 1.5 1.5 1.0 1.0 0.5 0.5 (2) 0 0 (1) 1 2 VGS (V) 0 - 60 3 VDS > ID x RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aj65 1.2 03an06 102 VGS(th) (V) 0.9 max typ 0.6 Ciss C (pF) Coss 10 Crss min 0.3 0 - 60 0 60 120 Tj (°C) 1 10- 1 180 ID = 0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature PMZ290UN Product data sheet 1 10 VDS (V) 102 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 03an07 5 VDS ID = 1 A Tj = 25 °C VDS = 10 V VGS (V) 4 ID VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 Fig. 15. Gate charge waveform definitions 0.8 1 QG (nC) Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-001949 1.0 IS (A) 0.8 (1) 0.6 (2) 0.4 0.2 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC SOT883 JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Fig. 18. Package outline DFN1006-3 (SOT883) PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 13. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 solder resist 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZ290UN v.1 20131106 Product data sheet - - PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 November 2013 PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 15 / 15