SO T2 3 PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V - - 2.1 A - 70 84 mΩ drain current ID VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics drain-source on-state resistance RDSon [1] VGS = 10 V; ID = 1.9 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa253 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number PMV90EN Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV90EN EC% [1] % = placeholder for manufacturing site code PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 30 V VGS gate-source voltage drain current ID total power dissipation Ptot 20 V VGS = 10 V; Tamb = 25 °C; t ≤ 5 s - 2.1 A VGS = 10 V; Tamb = 25 °C [1] - 1.9 A VGS = 10 V; Tamb = 100 °C [1] - 1.2 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 [1] Tamb = 25 °C - 7.6 A [2] - 310 mW [1] - 455 mW - 2085 mW -55 150 °C Tsp = 25 °C Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.5 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMV90EN Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa421 102 ID (A) Limit RDSon = VDS/ID 10 (1) 1 (2) (3) 10-1 (4) (5) (6) 10-2 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s Min Typ Max Unit [1] - 350 400 K/W [2] - 240 275 K/W [2] - 186 215 K/W - 50 60 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa422 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 10 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa423 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tamb = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tamb = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 1.9 A; Tj = 25 °C - 70 84 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 10 V; ID = 1.9 A; Tj = 150 °C - 109 130 mΩ VGS = 4.5 V; ID = 1.6 A; Tj = 25 °C - 90 115 mΩ VDS = 10 V; ID = 1.9 A; Tj = 25 °C - 5.7 - S VDS = 15 V; ID = 1.9 A; VGS = 10 V; Tj = 25 °C - 2.6 4 nC - 0.42 - nC - 0.34 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 132 - pF - 31 - pF - 13 - pF - 3 - ns - 8 - ns turn-off delay time - 15 - ns fall time - 5 - ns - 0.7 1.2 V VDS = 15 V; ID = 1.9 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMV90EN Product data sheet IS = 0.5 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa424 8 10 V ID (A) 4.5 V VGS = 3.5 V 6 017aaa425 10-3 ID (A) 3.3 V 10-4 (1) 3.0 V 4 2.8 V (3) (2) 10-5 2 2.5 V 2.2 V 0 0 1 2 3 VDS (V) 4 10-6 Tj = 25 °C 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa426 300 Fig 7. Sub-threshold drain current as a function of gate-source voltage 017aaa427 500 RDSon (mΩ) RDSon (mΩ) 400 2.8 V 3.3 V 3.0 V 3.5 V 200 300 200 4.5 V 100 (1) VGS = 10 V 100 (2) 0 1.5 3.5 5.5 ID (A) 0 7.5 Tj = 25 °C 0 2 4 6 8 10 VGS (V) ID = 1.9 A (1) Tj = 150 °C (2) Tj = 25 °C Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMV90EN Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa428 8 ID (A) 017aaa429 1.8 a (1) (2) 6 1.4 4 1.0 2 (2) 0 0 1 (1) 2 3 4 VGS (V) 5 0.6 -60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa430 3 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa431 103 C (pF) (1) (1) 102 2 (2) (2) (3) (3) 1 0 -60 0 60 10 120 Tj (°C) 180 1 10-1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMV90EN Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa432 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 1 2 QG (nC) 3 ID = 1.9 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa433 5 IS (A) 4 3 (1) 2 (2) 1 0 0 0.4 0.8 VSD(V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 18. Package outline SOT23 (TO-236AB) PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint for SOT23 (TO-236AB) PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV90EN v.1 20120213 Product data sheet - - PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMV90EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 February 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PMV90EN NXP Semiconductors 30 V, single N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 February 2012 Document identifier: PMV90EN