SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4 Gold metallization for high reliability SIEGET 45 - Line to p v ie w 45 GHz fT - Line ! " A P s d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP520F APs Pin Configuration 1=B 2=E 3=C Package 4=E TSFP-4 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 2.5 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 40 Base current IB 4 Total power dissipation Ptot 100 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 107°C Thermal Resistance Junction - soldering point1) RthJS 430 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-07-2001 SIEGET 45 BFP520F Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 2.5 3 3.5 V ICBO - - 200 nA IEBO - - 35 µA hFE 70 110 200 - - 45 - GHz - 0.07 - pF - 0.25 - - 0.31 - - 0.95 - - 23 - - 20.5 - dB - 23.5 - dBm - 10.5 - DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V V(BR)CEO AC characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gms Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 IP3 Third order intercept point at output2) VCE = 2 V, f = 1.8 GHz, ZS =ZL =50, IC = 20 mA P-1dB 1dB compression point3) VCE = 2 V, f = 1.8 GHz, ZS =ZL =50, IC = 20 mA dB 1G ms = |S21 / S12 | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1MHz to 6GHz. 3DC current at no input power 2 Dec-07-2001 SIEGET 45 BFP520F SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 15 aA BF = 235 - NF = 1 - VAF = 25 V IKF = 0.4 A ISE = 25 fA NE = 2 - BR = 1.5 - NR = 1 - VAR = 2 V IKR = 0.01 A ISC = 20 fA NC = 2 - RB = 11 IRB = - A RBM = 7.5 RE = 0.6 RC = 7.6 CJE = 235 fF VJE = 0.958 V MJE = 0.335 TF = 1.7 ps XTF = 10 - VTF = 5 V ITF = 0.7 mA PTF = 50 deg CJC = 93 fF VJC = 0.661 V MJC = 0.236 - XCJC = 1 - TR = 50 ns CJS = 0 fF VJS = 0.75 V MJS = 0.333 - XTB = -0.25 - EG = 1.11 eV XTI = 0.035 - FC = 0.5 - TNOM 298 K Package Equivalent Circuit: LBO = 0.22 nH LBI = 0.42 LEO = 0.28 nH RLBI = 0.15 LCO = 0.22 nH LEI = 0.26 nH KBO-EO = 0.10 - RLEI = 0.11 KBO-CO = 0.01 - LCI = 0.35 nH KEO-CO = 0.11 - RLCI = 0.13 CBE = 34 fF KCI-EI = -0.05 - CBC = 2 fF KBI-CI = -0.08 - CCE = 33 fF KBI-EI = 0.20 - nH Valid up to 6GHz The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B`, E`, C`. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 3 Dec-07-2001