BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP360W Marking Pin Configuration FBs 1=E 2=C 3=E 4=B - Package - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 95°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 260 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-16-2003 BFP360W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 130 200 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 15 mA, VCE = 3 V 2 Jun-16-2003 BFP360W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT Unit 11 14 - GHz Ccb - 0.3 0.5 Cce - 0.28 - Ceb - 0.47 - Fmin - 1 - dB Gms - 17.5 - dB Gma - 12 - dB I C = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure I C = 3 mA, V CE = 3 V, ZS = Z Sopt, f = 1.8 GHz Power gain, maximum stable 1) I C = 15 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 1.8 GHz Power gain, maximum available 1) I C = 15 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 3 GHz |S21e|2 Transducer gain dB I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz - 14 - I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 3 GHz - 9.5 - IP3 - 24 - P-1dB - 9 - Third order intercept point at output 2) dBm VCE = 3 V, IC = 15 mA, f = 1.8 GHz, Z S = ZL = 50 1dB Compression point at output I C = 15 mA, VCE = 3 V, Z S = Z L = 50, f = 1.8 GHz 1G = |S 1/2 ms 21e /S12e |, Gma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 Jun-16-2003 BFP360W SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 1 fA V V - fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14 mA A m V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA µA V fF V eV K - All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jun-16-2003