BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR340T Marking FAs Pin Configuration 1=B 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 2 Total power dissipation1) Ptot 60 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 113°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 605 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jul-01-2003 BFR340T Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 130 200 Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 5 mA, VCE = 3 V 2 Jul-01-2003 BFR340T Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT Unit 10 14 - GHz Ccb - 0.24 0.4 Cce - 0.2 - Ceb - 0.1 - Fmin - 1.15 - dB Gms - 15 - - Gma - 10.5 - dB IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz - 12 - IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz - 8.5 - IP3 - 13.5 - P-1dB - 0 - Third order intercept point at output2) dBm VCE = 3 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 Jul-01-2003 BFR340T SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 6.12 42.228 2.4753 16.777 0.8956 0.2403 182 10.3 0.0017 0.5487 2.71 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = V - fF ps mA V ns - 98.48 103 19.61 0.834 59.99 3.677 0.626 0 0 0.319 0 0.5 0.735 mA A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C7 C1 L2 B Transistor Chip B’ C’ R1 L3 C E’ C6 C2 L1 C5 C3 E L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.762 0.706 0.382 62 84 180 7 40 48 nH nH nH fF fF fF fF fF fF Valid up to 6GHz EHA07536 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jul-01-2003