BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360T Marking FBs Pin Configuration 1=B 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 81°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 325 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-16-2003 BFR360T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 130 200 Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 15 mA, VCE = 3 V 2 Jun-16-2003 BFR360T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 10 14 - Ccb - 0.34 0.5 Cce - 0.2 - Ceb - 0.4 - Fmin - 1 - - 13.5 - - 9.5 - Unit GHz IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB IC = 3 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) Gma IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz - 12 - IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz - 8 - IP3 - 25 - P-1dB - 9 - Third order intercept point at output 2) dBm VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 Jun-16-2003 BFR360T SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = V - fF ps mA V ns - 1 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14 mA A m V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA µA L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.762 0.706 0.382 62 84 180 7 40 48 nH nH nH fF fF fF fF fF fF V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E Valid up to 6GHz EHA07524 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jun-16-2003