IRF IRF6636

PD - 96977B
IRF6636
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
RoHS compliant containing no lead or bromide
VDSS
VGS
RDS(on)
RDS(on)
Low Profile (<0.7 mm)
20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V
Dual Sided Cooling Compatible
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
Ultra Low Package Inductance
18nC
6.1nC 1.9nC 7.3nC
10nC
1.8V
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for for Control FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
DirectFET™ ISOMETRIC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Typical RDS(on) (mΩ)
20
ID = 18A
15
10
T J = 125°C
5
T J = 25°C
0
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
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VGS, Gate-to-Source Voltage (V)
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
Max.
Units
20
±20
18
15
81
140
28
14
V
A
mJ
A
6.0
ID= 14A
5.0
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
10
20
30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
06/13/05
IRF6636
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Conditions
Typ. Max. Units
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
–––
15
–––
Static Drain-to-Source On-Resistance
–––
3.2
4.5
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 18A
–––
4.6
6.4
VGS = 4.5V, ID = 14A
V
VGS(th)
Gate Threshold Voltage
1.55
–––
2.45
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
–––
-6.4
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
gfs
Qg
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Forward Transconductance
52
–––
–––
Total Gate Charge
–––
18
27
S
Qgs1
Pre-Vth Gate-to-Source Charge
–––
5.9
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.9
–––
Qgd
Gate-to-Drain Charge
–––
6.1
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
4.1
–––
Qsw
–––
8.0
–––
Qoss
Output Charge
–––
10
–––
nC
Ω
VDS = 10V, ID = 14A
VDS = 10V
nC
VGS = 4.5V
ID = 14A
See Fig. 17
RG
Gate Resistance
–––
–––
1.5
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
6.2
–––
Ciss
Input Capacitance
–––
2420
–––
Coss
Output Capacitance
–––
780
–––
Crss
Reverse Transfer Capacitance
–––
360
–––
Min.
Typ. Max. Units
VDS = 10V, VGS = 0V
VDD = 16V, VGS = 4.5V
ID = 14A
ns
Clamped Inductive Load
pF
VDS = 10V
VGS = 0V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
–––
–––
2.8
–––
–––
140
(Body Diode)
ISM
Pulsed Source Current
Conditions
MOSFET symbol
A
showing the
integral reverse
VSD
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 14A, VGS = 0V
trr
Reverse Recovery Time
–––
16
24
ns
TJ = 25°C, IF = 14A
Qrr
Reverse Recovery Charge
–––
7.3
11
nC
di/dt = 100A/µs
(Body Diode)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6636
Absolute Maximum Ratings
Max.
Units
2.2
1.4
42
270
-40 to + 150
W
Parameter
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
°C
Thermal Resistance
Parameter
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Typ.
Max.
Units
–––
12.5
20
–––
1.0
58
–––
–––
3.0
–––
°C/W
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
0.017
W/°C
100
Thermal Response ( Z thJA )
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
τJ
0.1
τJ
τ1
R2
R2
τ2
τ1
τ2
R3
R3
τ3
τ3
R4
R4
τ4
τ4
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R1
R1
R5
R5
τ5
τC
τC
τ5
τi (sec)
Ri (°C/W)
0.6677
0.000066
1.0463
0.000896
1.5612
0.004386
29.2822
0.686180
25.4550 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu
board (still air).
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TC measured with thermocouple incontact with top (Drain) of part.
Rθ is measured at TJ of approximately 90°C.
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
IRF6636
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
10
2.5V
≤60µs PULSE WIDTH
2.5V
1
1
10
1
100
1000
0.1
Fig 4. Typical Output Characteristics
100
1000
1.5
ID = 18A
VDS = 10V
≤60µs PULSE WIDTH
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (Α)
10
Fig 5. Typical Output Characteristics
1000
100
T J = 150°C
T J = 25°C
10
T J = -40°C
1
1.0
V GS = 10V
V GS = 4.5V
0.5
0.1
1
2
3
4
50
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
T J = 25°C
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
40
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
10000
Ciss
Coss
1000
20 40 60 80 100 120 140 160
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
-60 -40 -20 0
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
1
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Crss
30
20
10
100
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
0
20
40
60
80
100
120
140
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
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IRF6636
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
10
T J = 150°C
T J = 25°C
T J = -40°C
1
100µsec
10
1msec
10msec
1
T A = 25°C
0.1
T J = 150°C
VGS = 0V
Single Pulse
0
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
VSD, Source-to-Drain Voltage (V)
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
2.4
80
2.2
VGS(th) Gate threshold Voltage (V)
90
70
ID, Drain Current (A)
0.10
60
50
40
30
20
10
2.0
1.8
ID = 50µA
1.6
1.4
1.2
1.0
0.8
0.6
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 13. Threshold Voltage vs. Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
EAS , Single Pulse Avalanche Energy (mJ)
120
ID
TOP
6.4A
9.8A
BOTTOM 14A
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6636
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
- DS
D.U.T.
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
V
RGSG
+
V
- DD
IAS
20V
tp
A
I AS
0.01Ω
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
VDD D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 17a. Switching Time Test Circuit
6
10%
VGS
td(on)
tr
td(off)
tf
Fig 17b. Switching Time Waveforms
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IRF6636
D.U.T
Driver Gate Drive
+
-
-
-
RG
•
•
•
•
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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7
IRF6636
DirectFET™ Outline Dimension, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
Note: Controlling
dimensions are in mm
METRIC
MAX
CODE MIN
4.85
A
4.75
3.95
B
3.70
2.85
C
2.75
0.45
D
0.35
0.62
E
0.58
0.62
F
0.58
0.79
G
0.75
0.57
H
0.53
0.30
J
0.26
K
O.88 0.98
2.28
L
2.18
0.70
M
0.59
0.08
N
0.03
IMPERIAL
MIN
0.187
0.146
0.108
0.014
0.023
0.023
0.030
0.021
0.010
0.035
0.086
0.023
0.001
MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.031
0.022
0.012
0.039
0.090
0.028
0.003
DirectFET™ Part Marking
8
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IRF6636
DirectFET™ Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6636). For 1000 parts on 7" reel,
order IRF6636TR1
REEL DIMENSIONS
TR1 OPTION (QTY 1000)
STANDARD OPTION (QTY 4800)
METRIC
METRIC
IMPERIAL
IMPERIAL
MIN
MIN
MAX
CODE
MAX
MIN
MIN
MAX
MAX
12.992
A
6.9
N.C
N.C
330.0
177.77 N.C
N.C
0.795
0.75
B
N.C
N.C
20.2
19.06
N.C
N.C
0.504
C
0.53
0.50
12.8
13.5
0.520
12.8
13.2
0.059
0.059
D
N.C
1.5
1.5
N.C
N.C
N.C
3.937
E
2.31
N.C
100.0
58.72
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
13.50
18.4
G
0.488
0.47
12.4
11.9
N.C
0.567
12.01
14.4
H
0.469
0.47
11.9
11.9
N.C
0.606
12.01
15.4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/05
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9